NEC 2sk1285 Datasets

Page 1
DATA SHEET
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
SWITCHING
DESCRIPTION
The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance
DS(on) = 0.32 Ω MAX. (VGS = 10 V, ID = 2 A)
R
R
DS(on) = 0.40 Ω MAX. (VGS = 4 V, ID = 2 A)
• Low C
iss Ciss = 500 pF TYP.
• Built-in G-S gate protection diodes
QUALITY GRADE
Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Electronics Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures Storage Temperature −55 to +150 °C Channel Temperature 150 °C MAX. Maximum Power Dissipation Total Power Dissipation (T Total Power Dissipation (T Maximum Voltages and Currents (TA = 25°C)
DSS Drain to Source Voltage 100 V
V
GSS(AC) Gate to Source Voltage ±20 V
V ID(DC) Drain Current (DC) ±3.0 A ID(pulse) Note PW ≤ 10
Note
Drain Current (pulse) ±12 A
µ
s, Duty Cycle ≤ 1%
A = 25°C) 1.3 W C = 25°C) 20 W
2SK1285
PACKAGE DRAWING
(Unit: mm)
8.5 MAX.
3.2 ±0.2
3.8 ±0.2
12.0 MAX.13.0 MIN.
12 TYP.
2.5 ±0.2
0.55
+0.08
0.8
–0.05
2.3 TYP.2.3 TYP.
EQUIVALENT CIRCUIT
Drain
Gate
Gate Protection Diode
Source
2.8 MAX.
+0.08 –0.05
1.2 TYP.
1. Source
2. Drain
3. Gate
4. Fin (Drain)
Body Diode
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17113EJ2V0DS00 (2nd edition) (Previous No. TC-2384) Date Published March 2004 N CP(K) Printed in Japan
The mark shows major revised points.
c
1993
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK1285
Drain to Source On-state Resistance RDS(on)
VGS = 10 V, ID = 2 A 0.26 0.32
GS = 4.0 V, ID = 2 A 0.32 0.40
V
Ω
Ω
Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2 A 2.4 S
Drain Leakage Current IDSS VDS = 100 V, VGS = 0 V 10
Gate to Source Leakage Current IGSS VDS = ±20 V, VDS = 0 V ±10
Input Capacitance Ciss 500 pF
Output Capacitance Coss 160 pF
Reverse Transfer Capacitance Crss
Turn-on Delay Time td(on) 40 ns
Rise Time tr 55 ns
Turn-off Delay Time td(off) 500 ns
Fall Time tf
Total Gate Charge QG 13 nC
Gate to Source Charge QGS 3 nC
Gate to Drain Charge QGD
V
DS = 10 V
GS = 0 V
V
f = 1 MHz
V
GS(on) = 10 V
V
DD = 50 V
D = 2 A, RG = 10 Ω
I
L = 15 Ω
R
V
GS = 10 V
D = 3 V
I
DD = 80 V
V
20 pF
120 ns
2 nC
µ
A
µ
A
Diode Forward Voltage VSD ISD = 3 A, VGS = 0 V 0.9 V
Reverse Recovery Time trr 140 ns
Reverse Recovery Charge Qrr
IF = 3A, V
di/dt = 50 A/
GS = 0
µ
s
250 nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
10%
0
I
D
90%
10%
0
t
d(on)trtd(off)t
t
on
90%
V
GS
90%
I
D
10%
f
t
off
PG.
D.U.T.
IG = 2 mA
50 Ω
PG.
V
GS
0
τ
µ
τ = 1 s
Duty Cycle ≤ 1%
L
R
GS
V
G
R
Wave Form
V
DD
I
D
Wave Form
R
L
V
DD
2
Data Sheet D17113EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1285
TC=25°C
TA=−25°C
25°C 75°C 125°C
Data Sheet D17113EJ2V0DS
3
Page 4
°C/W
25°C
2SK1285
125°C
75°C
25°C
A
=−25°C
T
4
Data Sheet D17113EJ2V0DS
Page 5
0V
2SK1285
0V
0V
Q
G
Data Sheet D17113EJ2V0DS
5
Page 6
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2SK1285
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application.
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M8E 02. 11-1
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