Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK1283 is N-channel MOS Field Effect Transistor designed or
solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance
RDS(on) = 0.18 Ω MAX. (VGS = 10 V, ID = 2 A)
DS(on) = 0.24 Ω MAX. (VGS = 4 V, ID = 2 A)
R
• Low C
iss Ciss = 500 pF TYP
• Built-in G-S gate protection diode
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (TC = 25°C) PT1 20 W
Total Power Dissipation (TA = 25°C) PT2 1.3 W
Channel Temperature T
Storage Temperature Tstg −55 to +150 °C
µ
Note PW ≤ 10
s, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be applied
to this device.
D(DC) ±3.0 A
Note
I
D(pulse)
ch 150 °C
±12 A
PACKAGE DRAWING (Unit: mm)
12 TYP.
0.8
2SK1283
2.3 TYP.2.3 TYP.
12.0 MAX.13.0 MIN.
2.5 ±0.2
0.55
Drain
Source
2.8 MAX.
+0.08
–0.05
Body
Diode
8.5 MAX.
3.2 ±0.2
3.8 ±0.2
+0.08
–0.05
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1.2 TYP.
1
. Source
2. Drain
3. Gate
4. Fin (Drain)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17114EJ3V0DS00 (3rd edition)
Date Published December 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
1993
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
2SK1283
Note
RDS(on)
0.15 0.18
0.18 0.24
Ω
Ω
VGS = 10 V, ID = 2 A Drain to Source On-state Resistance
GS = 4.0 V, ID = 2 A
V
Gate to Source Cutoff Voltage VGS(off) 1.0 2.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance Note | yfs | 2.4 S VDS = 10 V, ID = 2 A
Drain Leakage Current IDSS 10 µA VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current IGSS ±10
Input Capacitance Ciss 500 pF
Output Capacitance Coss 200 pF
Reverse Transfer Capacitance Crss 40 pF
Turn-on Delay Time td(on) 40 ns
Rise Time tr 100 ns
Turn-off Delay Time td(off) 550 ns
µ
A VDS = ±20 V, VDS = 0 V
V
DS = 10 V
GS = 0 V
V
f = 1 MHz
V
GS(on) = 10 V
DD = 30 V
V
D = 2 A, RG = 10 Ω
I
L = 15 Ω
R
Fall Time tf 200 ns
Total Gate Charge QG 13 nC
Gate to Source Charge QGS 3 nC
Gate to Drain Charge QGD 3 nC
V
GS = 10 V
D = 3 V
I
DD = 48 V
V
Diode Forward Voltage Note VSD 0.9 V ISD = 3 A, VGS = 0 V
Reverse Recovery Time trr 140 ns
Reverse Recovery Charge Qrr 700 nC
F = 3 A, VGS = 0 V
I
µ
di/dt = 50 A/
s
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
10%
0
I
D
90%
10%
0
t
d(on)trtd(off)t
t
on
90%
V
GS
90%
I
D
10%
f
t
off
PG.
D.U.T.
IG = 2 mA
50 Ω
PG.
V
GS
0
τ
µ
τ = 1 s
Duty Cycle ≤ 1%
L
R
GS
V
G
R
Wave Form
V
DD
I
D
Wave Form
R
L
V
DD
2
Data Sheet D17114EJ3V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1283
TC = 25°C
−
25°C
25°C
75°C
125°C
Data Sheet D17114EJ3V0DS
3
Page 4
6.25 °C/W
2SK1283
125°C
75°C
T
A
= −25°C
25°C
4
Data Sheet D17114EJ3V0DS
Page 5
2SK1283
0 V
V
V
GS
V
DS
Q
G
Data Sheet D17114EJ3V0DS
5
Page 6
•
The information in this document is current as of December, 2004. The information is subject to
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•
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2SK1283
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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M8E 02. 11-1
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