NEC 2SK1109 Technical data

DATA SHEET

12

3

5.5 ± 0.4

1.8 MIN.

1.8 MIN. 1.5

1.1

0.8

2.9 ± 0.2

1. Source

2. Drain

3. Gate

JUNCTION FIELD EFFECT TRANSI STO R

2SK1109

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

The 2SK1109 is suitable for converter of ECM.

FEATURES

• Compact package

• High forward transfer admittance

S TYP. (I

1000

µ

1600 µS TYP. (I

= 100 µA)

DSS

= 200 µA)

DSS

• Includes diode and high resistance at G - S

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK1109 SC-59 (MM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T

Note

V

DSX

GDO

D

G

T

j

stg

20 V

–20 V

10 mA
10 mA
80 mW

125 °C

–55 to +125 °C

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Drain

Gate

Source

= –1.0 V

Note V

GS

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK1109

Zero Gate Voltage Drain Cut-off Current I
Gate Cut-off Voltage V
Forward Transfer Admittance | y
Forward Transfer Admittance | y
Input Capacitance C

DSS

VDS = 5.0 V, VGS = 0 V 40 600

GS(off)VDS

fs1

|VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 350

fs2

|VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350

iss

= 5.0 V, ID = 1.0 µA −0.1 −1.0 V

VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF

Noise Voltage NV See Test Circuit 1.8 3.0

I

RANK

DSS

MARKING J32 J33 J34 J35 J36 J37

DSS

I

(µA)

40 to 70 60 to 110 90 to 180 150 to 300 200 to 450 300 to 600

NOISE VOLTAGE TEST CIRCUIT

+4.5 V

R = 1 kΩ

JIS A

NV (r.m.s)

A

µ

S

µ

S

µ

V

µ

C = 10 pF

2

Data Sheet D15940EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

20 40 60 80 100 120 140 160

0

40

20

80

60

100

DERATING FACTOR OF
POWER DISSIPATION

T

A - Ambient Temperature - ˚C

dT - Derating Factor - %

VGS - Gate to Source Voltage - V

IG - Gate Current - A

GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE

µ

0

10

20

30

−30

−40

−20

−10

40

−0.2−0.4−0.6−0.8−1.0

1.00.80.60.40.2

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - mA

−0.6 −0.4 −0.2 0 +0.2

0.2

0.6

0.4

0.8

1.0

VDS = 5 V

I

D

S

S

=

3

0

0

A

I

D

S

S

=

2

0

0

A

I

D

S

S

=

1

0

0

A

µ

µ

µ

INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

10 20 50 100

V

DS

- Drain to Source Voltage - V

C

iSS

- Input Capacitance - pF

10

20

50

100

1

2

5

152

VDS = 0 V
f = 1.0 MHz

GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE

DRAIN CURRENT CO-RELATION

Zero-Gate Voltage Drain Current - A

V

GS (off)

- Gate to Source Cut-off Voltage - V
|y

fs

| - Forward Transfer Admittance - S

V

DS

= 5 V

1.0

0.5

0.2

0.1

0.05

0.02

10.0

20 50 100 200 500 1000

0.01

5.0

2.0

10

µ

V

GS (off)

|yfs|

µ

2SK1109

Data Sheet D15940EJ1V0DS

3