DATA SHEET
12
3
5.5 ± 0.4
1.8 MIN.
1.8 MIN. 1.5
1.1
0.8
2.9 ± 0.2
1. Source
2. Drain
3. Gate
JUNCTION FIELD EFFECT TRANSI STO R
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
S TYP. (I
1000
µ
1600 µS TYP. (I
= 100 µA)
DSS
= 200 µA)
DSS
• Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1109 SC-59 (MM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
Note
V
DSX
GDO
D
G
T
j
stg
20 V
–20 V
10 mA
10 mA
80 mW
125 °C
–55 to +125 °C
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Drain
Gate
Source
= –1.0 V
Note V
GS
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK1109
Zero Gate Voltage Drain Cut-off Current I
Gate Cut-off Voltage V
Forward Transfer Admittance | y
Forward Transfer Admittance | y
Input Capacitance C
DSS
VDS = 5.0 V, VGS = 0 V 40 600
GS(off)VDS
fs1
|VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 350
fs2
|VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350
iss
= 5.0 V, ID = 1.0 µA −0.1 −1.0 V
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF
Noise Voltage NV See Test Circuit 1.8 3.0
I
RANK
DSS
MARKING J32 J33 J34 J35 J36 J37
DSS
I
(µA)
40 to 70 60 to 110 90 to 180 150 to 300 200 to 450 300 to 600
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 kΩ
JIS A
NV (r.m.s)
A
µ
S
µ
S
µ
V
µ
C = 10 pF
2
Data Sheet D15940EJ1V0DS
TYPICAL CHARACTERISTICS (TA = 25°C)
20 40 60 80 100 120 140 160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
T
A - Ambient Temperature - ˚C
dT - Derating Factor - %
VGS - Gate to Source Voltage - V
IG - Gate Current - A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
µ
0
10
20
30
−30
−40
−20
−10
40
−0.2−0.4−0.6−0.8−1.0
1.00.80.60.40.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
−0.6 −0.4 −0.2 0 +0.2
0.2
0.6
0.4
0.8
1.0
VDS = 5 V
I
D
S
S
=
3
0
0
A
I
D
S
S
=
2
0
0
A
I
D
S
S
=
1
0
0
A
µ
µ
µ
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10 20 50 100
V
DS
- Drain to Source Voltage - V
C
iSS
- Input Capacitance - pF
10
20
50
100
1
2
5
152
VDS = 0 V
f = 1.0 MHz
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
V
GS (off)
- Gate to Source Cut-off Voltage - V
|y
fs
| - Forward Transfer Admittance - S
V
DS
= 5 V
1.0
0.5
0.2
0.1
0.05
0.02
10.0
20 50 100 200 500 1000
0.01
5.0
2.0
10
µ
V
GS (off)
|yfs|
µ
2SK1109
Data Sheet D15940EJ1V0DS
3
2SK1109
RANK: J32
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
150
200
250
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
50
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
V
GS
= 0 V
−0.15 V
µ
RANK: J33
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
180
240
300
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
60
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
VGS = 0 V
−0.15 V
µ
RANK: J34
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
160
240
320
400
V
DS - Drain to Source Voltage - V
ID - Drain Current - A
80
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
VGS = 0 V
−0.15 V
µ
RANK: J35
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
300
400
500
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
100
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
−0.15 V
µ
VGS = 0 V
RANK: J36
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
280
420
560
700
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
140
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
VGS = 0 V
−0.15 V
µ
µ
RANK: J37
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
360
540
720
900
V
DS - Drain to Source Voltage - V
ID - Drain Current - A
180
0
1002468
−0.05 V
0.15 V
0.10 V
0.05 V
−0.10 V
VGS = 0 V
−0.15 V
4
Data Sheet D15940EJ1V0DS
[MEMO]
2SK1109
Data Sheet D15940EJ1V0DS
5
[MEMO]
2SK1109
6
Data Sheet D15940EJ1V0DS
[MEMO]
2SK1109
Data Sheet D15940EJ1V0DS
7
2SK1109
•
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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