NEC 2sk1108 Datasets

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

The 2SK1108 is suitable for converter of ECM.

FEATURES

• Compact package

• High forward transfer admittance

S TYP. (I

1000

µ

1600 µS TYP. (I

• Includes diode and high resistance at G - S

DSS

= 100 µA)

DSS

= 200 µA)

DATA SHEET

2SK1108

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK1108 SST

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

Gate to Drain Voltage V

Drain Current I

Gate Current I

Total Power Dissipation P

Junction Temperature T

Storage Temperature T

Note

Remark

GS

= –1.0 V

V

Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

Note

V

DSX

GDO

D

G

T

j

stg

20 V

–20 V

10 mA

10 mA

100 mW

125 °C

–55 to +125 °C

EQUIVALENT CIRCUIT

Drain

Gate

Source

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15951EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK1108

Zero Gate Voltage Drain Cut-off Current I

Gate Cut-off Voltage V

Forward Transfer Admittance | y

Forward Transfer Admittance | y

Input Capacitance C

DSS

VDS = 5.0 V, VGS = 0 V 40 600

GS(off)VDS

fs1

|VDS = 5.0 V, ID = 20 µA, f = 1.0 kHz 350

fs2

|VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350

iss

= 5.0 V, ID = 1.0 µA

VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 7.0 8.0 pF

0.1

−

1.0 V

−

Noise Voltage NV See Test Circuit 1.8 3.0

NOISE VOLTAGE TEST CIRCUIT

+4.5 V

NV (r.m.s)

C = 10 pF

R = 1 kΩ

JIS A

A

µ

S

µ

S

µ

V

µ

2

Data Sheet D15951EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

20 40 60 80 100 120 140 160

0

40

20

80

60

100

DERATING FACTOR OF
POWER DISSIPATION

T

A - Ambient Temperature - ˚C

dT - Derating Factor - %

GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE

µ

IG - Gate Current - A

VGS - Gate to Source Voltage - V

2SK1108

40
30

20
10
0

−0.2−0.4−0.6−0.8−1.0

−10

−20

−30

−40

1.00.80.60.40.2

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

1.0

VDS = 5 V

0.8

0.6

0.4

- Drain Current - mA

D

I

0.2

A

µ

0

A

0

µ

3

0

=

0

S

2

S

A

D

I

=

µ

S

S

0

D

0

I

1

=

S

S

D

I

−0.6 −0.4 −0.2 0 +0.2
V

GS

- Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE

10.0

µ

DRAIN CURRENT CO-RELATION

5.0

2.0

|yfs|

V

DS

= 5 V

1.0

0.5

INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

100

50

20

10

5

- Input Capacitance - pF

iSS

C

2

1

152

DS

- Drain to Source Voltage - V

V

VDS = 0 V
f = 1.0 MHz

10 20 50 100

0.05

- Gate to Source Cut-off Voltage - V

0.02

| - Forward Transfer Admittance - S

fs

|y

0.01

GS (off)

V

0.2

0.1

20 50 100 200 500 1000

10

Zero-Gate Voltage Drain Current - A

V

SS (off)

µ

Data Sheet D15951EJ1V0DS

3

2SK1108

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: E

250

200

µ

150

100

- Drain Current - A

D

I

50

V

0

DS

V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: H

400

320

µ

240

160

ID - Drain Current - A

80

VGS = 0 V

0

DS - Drain to Source Voltage - V

V

0.15 V

0.10 V

0.05 V

GS

= 0 V

−0.05 V

−0.15 V

−0.10 V

- Drain to Source Voltage - V

0.15 V

0.10 V

0.05 V

−0.05 V

−0.10 V

−0.15 V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: F

300

240

µ

0.15 V

0.10 V

180

120

- Drain Current - A

D

I

60

1002468

0

0.05 V

VGS = 0 V

−0.05 V

−0.10 V

DS

- Drain to Source Voltage - V

V

−0.15 V

1002468

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: J

500

400

µ

300

200

- Drain Current - A

D

I

100

1002468

0

DS

- Drain to Source Voltage - V

V

0.15 V

0.10 V

0.05 V

VGS = 0 V

−0.05 V

−0.10 V

−0.15 V

1002468

700

560

µ

420

280

- Drain Current - A

D

I

140

4

0

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: K

0.15 V

0.10 V

0.05 V

VGS = 0 V

−0.05 V

−0.10 V

−0.15 V

DS

- Drain to Source Voltage - V

V

900

720

µ

540

360

ID - Drain Current - A

180

1002468

Data Sheet D15951EJ1V0DS

0

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

RANK: L

0.15 V

0.10 V

0.05 V

VGS = 0 V

−0.05 V

−0.10 V

−0.15 V

DS - Drain to Source Voltage - V

V

1002468

PACKAGE DRAWING (Unit: mm)

4.0±0.2 2.0±0.2

0.50 TYP.

0.45 TYP.

1.0

TYP.

0.6 TYP.

0.42 TYP.

2SK1108

3.0±0.2

12.5 MIN.

DGS

1.27 TYP.

1.27 TYP.

1.35

TYP.

Data Sheet D15951EJ1V0DS

5

[MEMO]

2SK1108

6

Data Sheet D15951EJ1V0DS

[MEMO]

2SK1108

Data Sheet D15951EJ1V0DS

7

2SK1108

•

The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4