NEC 2sj626 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SJ626

DESCRIPTION

The 2SJ626 is a switching device which can be driven directly
by a 4.0 V power source.
The 2SJ626 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.

FEATURES

• 4.0 V drive available

• Low on-state resistance

= 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

DS(on)1

R
R
R

= 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)

DS(on)2

= 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)

DS(on)3

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ626 SC-96 (Mini Mold Thin Type)

Marking: XN

ABSOLUTE MAXI MUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS
Drain Current (DC) (T
Drain Current (pulse)

= 0 V) V

= 25°C) I

A

Note1

DSS

GSS

D(DC)

I

D(pulse)

Total Power Dissipation P
Total Power Dissipation

Note2

P
Channel Temperature Tch
Storage Temperature Tstg

T1

T2

–60 V

m20
m1.5
m6.0

0.2 W

1.25 W
150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit: mm)

+0.1

0.4

–0.05

+0.1

–0.15

0.65

1.5

2.8 ±0.2

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate
2 : Source
3 : Drain

EQUIVALENT CIRCUIT

V
A
A

Gate

Gate
Protection
Diode

0.9 to 1.1

Drain

Source

0.65

Body
Diode

+0.1

0.16

–0.06

0 to 0.1

s, Duty Cycle ≤ 1%

Notes 1. PW ≤ 10

2. Mounted on FR-4 board, t ≤ 5

µ

sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15962EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ626

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate to Source Cut-off Voltage V

GS(off)VDS

VDS = –60 V, VGS = 0 V –1.0µA

DSS

VGS = m20 V, VDS = 0 V

GSS

= –10 V, ID = –1.0 mA –1.5 –2.1 –2.5 V

10

m

Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.0 A 1.0 2.5 S
Drain to Source On-state Resi stance R

R

R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

DS(on)1VGS

DS(on)2VGS

DS(on)3VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GDID

F(S-D)IF

= –10 V, ID = –1.0 A 310 388 mΩ
= –4.5 V, ID = –1.0 A 385 514 mΩ

= –4.0 V, ID = –1.0 A 417 556 mΩ
VDS = –10 V 255 pF
VGS = 0 V 45 pF
f = 1.0 MHz 17 pF
VDD = –30 V, ID = –1.0 A 17 ns
VGS = –10 V 29 ns
RG = 10 Ω 92 ns

65 ns

V

= –48 V 8.2 nC

DD

VGS = –10 V 1.3 nC

= –1.5 A 2.2 nC
= 1.5 A, VGS = 0 V 0.86 V

A

µ

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

R

PG.

V

GS (−)

0

τ = 1 s

µ

Duty Cycle ≤ 1%

G

VDD

τ

VGS

Wave Form

VDS

Wave Form

VGS(−)

0

10%

VGS

VDS(−)

90%

VDS

0

10% 10%

td(on) trtd(off) tf

ton toff

90%

90%

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = −2 mA

PG.

50 Ω

RL

VDD

2

Data Sheet D15962EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

p

(

)

2SJ626

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

dT - Percentage of Rated Power - %

0

0 25 50 75 100 125 150 175

TA - Ambient Temperature - °CT

FORWARD BIAS SAFE OPERATING AREA

-10

DS(on)

R

-1

Limited

VGS = −10 V

D(DC)

I

D(pulse

I

)

PW = 1 ms

10 ms

100 ms

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

1.5

1.25

1

ation - W

0.75

0.5

0.25

- Total Power Dissi

T

P

0

0 25 50 75 100 125 150 175

- Ambient Temperature - °C

A

Mounted on FR-4 board
t ≤ 5 sec.

5 s

-0.1

- Drain Current - A

D

I

Single Pulse
Mounted on FR-4 board of

2

x 1.1 mm

50 cm

-0.01

-0.1 -1 -10 -100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single Pulse

Without board

100

Mounted on FR-4 board of

2

x 1.1 mm

50 cm

10

- Transient Thermal Resistance - °C/W

th(ch-A)

r

1

1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D15962EJ1V0DS

3

2SJ626

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

- 6
Pulsed

VGS = −10 V

- 4

−

4.5 V

- Drain Current - A

- 2

D

I

0

0 - 1 - 2 - 3

−

4.0 V

VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

- 2.6

- 2.4

- 2.2

- 2

- Gate Cut-off Voltage - V

GS(off)

- 1.8

V

- 1.6

-50 0 50 100 150

Tch - Channel Temperature - °CI

VDS = −10 V

D

I

= −1.0 mA

FORWARD TRA NSFER CHARACTERISTI CS

-10
Pulsed

DS

V

= −10 V

-1

TA = 125°C

−25°

- Drain Current - A

D

I

-0.1

-0.01

-0.001

-0.0001

- 1- 2- 3- 4- 5

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

Pulsed

DS

= −10 V

V

1

TA = −25°C

25°C
75°C

0.1

| - Forward Transfer Admittance - S

0.01

fs

| y

-0.01 -0.1 -1 -10

- Drain Current - A

D

125°C

75°C
25°C

C

DRAIN TO SOURCE ON-STAT E RESISTANCE
vs. CHANNEL TEMPERATURE

800

600

400

200

Pulsed

D

I

= −1.0 A

VGS = −4.0 V

−

4.5 V

−

10 V

- Drain to Source On-state Resistance - mΩ

DS(on)

0

R

-50 0 50 100 150

Tch – Channel Temperrature - °C

4

Data Sheet D15962EJ1V0DS

DRAIN TO SOURCE ON-STAT E RESISTANCE
vs.GATE TO SOURCE VOLTAGE

800

600

400

200

- Drain to Source On-state Resistance - mΩ

DS(on)

0

R

0 - 4 - 8 - 12 - 16 - 20

VGS - Gate to Source Voltage - V

Pulsed

D

= −1.0 A

I

2SJ626

DRAIN TO SOURCE ON-STAT E RESISTANCE
vs. DRAIN CURRENT

800

600

400

200

TA = 125°C

75°C

25°C

-25°C

- Drain to Source On-state Resistance - mΩ

0

DS(on)

-0.01 -0.1 -1 -10

R

ID - Drain Current - A

DRAIN TO SOURCE ON-STAT E RESISTANCE
vs. DRAIN CURRENT

800

TA = 125°C

TA = 125°CTA = 125°CTA = 125°C

600

400

200

- Drain to Source On-state Resistance - mΩ

0

DS(on)

-0.01 -0.1 -1 -10

R

75°C

25°C

-25°C

ID - Drain Current – A

Pulsed

GS

V

Pulsed

GS

V

= −4.0 V

= −10 V

DRAIN TO SOURCE ON-STAT E RESISTANCE
vs. DRAIN CURRENT

800

TA = 125°C

600

75°C

400

200

25°C

−25°

C

- Drain to Source On-state Resistance - mΩ

0

DS(on)

-0.01 -0.1 -1 -10

R

ID - Drain Current - A

SWITCHING CHARACTERISTICS

1000

d(off)

t

f

t

r

t

d(on)

t

- Switching Time – ns

f

, t

d(off)

, t

r

, t

d(on)

t

100

10

1

-0.1 -1 -10

ID - Drain Current - A

Pulsed

GS

V

= −4.5 V

VDD = −30 V

GS

V

= −10 V

G

= 10 Ω

R

CAPACITANCE vs .
DRAIN TO SOURCE VOLTA G E

1000

C

iss

- Capacitance – pF

rss

, C

oss

, C

iss

C

100

10

oss

C

C

rss

1

-0.1 -1 -10 -100

VDS - Drain to Source Voltage - V

VGS = 0 V
f = 1.0 MHz

SOURCE TO DRAIN DIODE FO RWARD VOLTAGE

– Diode Forward Current - A

F

I

Data Sheet D15962EJ1V0DS

10

1

0.1

Pulsed

GS

0.01

0.4 0.6 0.8 1 1.2

V

- Source to Drain Voltage - V

F(S-D)

V

= 0 V

5

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

- 10
ID = −1.5 A

2SJ626

- 8

- 6

- 4

- 2

– Gate to Source Voltage - V

GS

V

0

0246810

VDD = −12 V

−

30 V

−

48 V

QG – Gate Charge - nC

6

Data Sheet D15962EJ1V0DS

[MEMO]

2SJ626

Data Sheet D15962EJ1V0DS

7

2SJ626

•

The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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•

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•

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•

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•

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M8E 00. 4