NEC 2SJ625 Technical data

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SJ625

DESCRIPTION

The 2SJ625 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.

FEATURES

• 1.8 V drive available

• Low on-state resistance

= 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)

RDS(on)1
R

= 171 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)

DS(on)2

R

= 314 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)

DS(on)3

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ625 SC-96 (Mini Mold Thin Type)

Marking: XM

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS
Drain Current (DC) (T
Drain Current (pulse)

= 0 V) V

= 25°C) I

A

Note1

Total Power Dissipation P
Total Power Dissipation

Note2

Channel Temperature Tch
Storage Temperature Tstg

DSS
GSS m8.0 V

D(DC) m3.0 A

I

D(pulse) m12 A

T1

P

T2

1.25 W

–55 to +150 °C

+0.1

2.8 ±0.2

–20 V

0.2 W

150 °C

PACKAGE DRAWING (Unit: mm)

+0.1

0.4

–0.05

–0.15

0.65

1.5

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate
2 : Source
3 : Drain

0.65

0.9 to 1.1

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

+0.1

0.16

–0.06

0 to 0.1

s, Duty Cycle ≤ 1%

Notes 1. PW ≤ 10

2. Mounted on FR-4 board, t ≤ 5

µ

sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15961EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan

©

2002

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ625

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

VDS = –20 V, VGS = 0 V –10

DSS

VGS = m8.0 V, VDS = 0 V

GSS

GS(off)VDS

10

m

= –10 V, ID = –1.0 mA –0.45 –0.75 –1.5 V
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.5 A 2.0 4.9 S
Drain to Source On-state Resi stance R

R

R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

DS(on)1VGS

DS(on)2VGS

DS(on)3VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GDID

F(S-D)IF

= –4.5 V, ID = –1.5 A 90 113 mΩ
= –2.5 V, ID = –1.5 A 128 171 mΩ

= –1.8 V, ID = –1.0 A 188 314 mΩ
VDS = –10 V 348 pF
VGS = 0 V 88 pF
f = 1.0 MHz 38 pF
VDD = –10 V, ID = –1.5 A 39 ns
VGS = –4.0 V 190 ns
RG = 10 Ω 220 ns

250 ns

V

= –16 V 2.6 nC

DD

VGS = –4.0 V 0.8 nC

= –3.0 A 0.9 nC
= 3.0 A, VGS = 0 V 0.89 V

A

µ

A

µ

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

R

PG.

V

GS(−)

0

µ

τ = 1 s

Duty Cycle ≤ 1%

G

V

DD

τ

V

GS

Wave Form

V

DS

Wave Form

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

V

GS(−)

10%

0

V

DS(−)

90%

V

DS

0

t

d(on)

10% 10%

trt

t

on

V

GS

d(off)tf

t

90%

PG.

90%

off

IG = −2 mA

50 Ω

R

L

V

DD

2

Data Sheet D15961EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

)

f

2SJ625

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

0

0 255075100125150175

TA - Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

-100
R

Limited

-10

(V

DS(on)

GS

= −4.5 V)

I

D(pulse

PW = 1 ms

1.25

0.75

- Total Power Dissipation - W

T

0.25

P

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

1.5

1

0.5

Mounted on FR-4 board,
t ≤ 5 sec

0

0 255075100125150175

TA - Ambient Temperature - °C

I

D(DC)

Single Pulse

- Drain Current - A

D

I

-1

-0.1
Mounted on FR-4 board o

5000 mm2 x 1.1 mm

-0.01

-0.1 -1 -10 -100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single Pulse

100

10

10 ms
100 ms

5 s

W ithout board

Mounted on FR-4 boa rd of
5000 mm

2

x 1.1 mm

- Transient Thermal Resistance - °C/W

th(ch-A)

1

r

1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D15961EJ1V0DS

3

2SJ625

V

V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTA G E

-12
Pulsed

-10

VGS = −4.5 V

-8

-6

-4

- Drain Current - A

D

I

−

1.8

-2

0

0 -0.4 -0.8 -1.2 -1.6 -2

VDS - Drain to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

-1

2.5

−

VDS = −10 V

D

= −1.0 mA

I

- Drain Current - A

D

I

-0.001

-0.0001

100

FORWARD TRA NSFER CHARACTERISTI CS

-10
VDS = −10 V

Pulsed

-1

-0.1

TA = 125°C

75°C
25°C

-0.01

−25°C

0-1-2-3

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

VDS = −10 V
Pulsed

-0.8

-0.6

- Gate Cut-off Voltage - V

GS(off)

V

-0.4

-50 0 50 100 150

Tch - Channel Temperature - °C

DRAIN TO SOURCE ON-STA T E RESISTANCE vs.
CHANNEL TEMPERATURE

300

Pulsed

VGS = −1.8 V, ID = −1.0 A

250

VGS = −2.5 V, ID = −1.5 A

200

150

10

TA = −25°C

25°C
75°C

125°C

1

| - Forward Transfer Admittance - S

fs

| y

0.1

-0.01 -0.1 -1 -10

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

300

250

200

150

Pulsed

100

- Drain to Source On-state Resistance - mΩ

DS(on)

50

R

-50 0 50 100 150

Tch - Channel Temperature - °C

4

VGS = −4.5 V, ID = −1.5 A

Data Sheet D15961EJ1V0DS

100

- Drain to Source On-state Resistance - mΩ

DS(on)

50

R

0-2-4-6-8

VGS - Gate to Source Voltage - V

ID = −1.5 A

2SJ625

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

300

VGS = −4.5 V
Pulsed

250

200

TA = 125°C

150

100

- Drain to Source On-state Resistance - mΩ

DS(on)

50

R

-0.01 -0.1 -1 -10 -100

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

300

VGS = −1.8 V

TA = 125°C

Pulsed

250

200

150

100

- Drain to Source On-state Resistance - mΩ

DS(on)

50

R

-0.01 -0.1 -1 -10

ID - Drain Current - A

75°C
25°C

25°C

−

75°C

25°C

25°C

−

DRAIN TO SOURCE ON-STA T E RESISTANCE vs.
DRAIN CURRENT

300

VGS = −2.5 V
Pulsed

250

200

TA = 125°C

150

75°C
25°C

100

−25°C

- Drain to Source On-state Resistance - mΩ

DS(on)

50

R

-0.01 -0.1 -1 -10

ID - Drain Current - A

SWITCHING CHARACTERISTICS

1000

t

r

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

d(on)

t

10

VDD = −10 V
V

GS

R

= 10

G

-0.1 -1 -10

ID - Drain Current - A

f

t

t

d(off)

t

d(on)

= −4.0 V

Ω

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000

VGS = 0 V

100

Pulsed

f = 1.0 MHz

C

100

- Capacitance - pF

rss

, C

oss

, C

iss

C

10

-0.1 -1 -10 -100

VDS - Drain to Source Voltage - V

iss

C

oss

C

rss

Data Sheet D15961EJ1V0DS

10

- Diode Forward Current - A

F

I

1

0.1

VGS = 0 V

0.01

0.4 0.6 0.8 1 1.2 1.4

V

- Source to Drain Voltage - V

F(S-D)

5

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

-6
ID = −3.0 A

2SJ625

-4

-2

- Gate to Source Voltage - V

GS

V

0

0123

VDD = −16 V

−10 V

4.0 V

−

QG - Gate Charge - nC

6

Data Sheet D15961EJ1V0DS

[MEMO]

2SJ625

Data Sheet D15961EJ1V0DS

7

2SJ625

•

The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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•

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M8E 00. 4