NEC 2sj621 Datasets

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SJ621

DESCRIPTION

The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.

FEATURES

• 1.8 V drive available

• Low on-state resistance

= 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)

DS(on)1

R

= 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)

RDS(on)2

= 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)

RDS(on)3

= 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)

RDS(on)4

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ621 SC-96 (Mini Mold Thin Type)

Marking: XG

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V
Drain Current (DC) (TA
Drain Current (pulse)
Total Power Dissipation (TA
Total Power Dissipation (TA = 25°C)

= 25°C) I

Note1

= 25°C) P

Note2

I

D(pulse)

Channel Temperature T
Storage Temperature T

DSS
GSS

D(DC)

T1

P

T2
ch

stg

–12 V

m8.0
m3.5

m12

0.2 W

1.25 W
150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit: mm)

+0.1

0.4

–0.05

+0.1

–0.15

0.65

1.5

2.8 ±0.2

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate
2 : Source
3 : Drain

EQUIVALENT CIRCUIT

V
A
A

Gate

Gate
Protection
Diode

0.9 to 1.1

Drain

Source

0.65

Body
Diode

+0.1

0.16

–0.06

0 to 0.1

s, Duty Cycle ≤ 1%

Notes 1. PW ≤ 10

2. Mounted on FR-4 board, t ≤ 5

µ

sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Document No. D15634EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan

©

2001

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ621

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

VDS = –12 V, VGS = 0 V –10

DSS

VGS = m8.0 V, VDS = 0 V

GSS

GS(off)VDS

10

m

= –10 V, ID = –1.0 mA 0.45 1.5 V
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –3.5 A 4.0 S
Drain to Source On-state Resi stance R

R
R

R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

DS(on)1VGS

DS(on)2VGS

DS(on)3VGS

DS(on)4VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GDID

F(S-D)IF

= –4.5 V, ID = –2.0 A 35 44 mΩ
= –3.0 V, ID = –2.0 A 42 56 mΩ
= –2.5 V, ID = –2.0 A 46 62 mΩ

= –1.8 V, ID = –1.5 A 63 105 mΩ
VDS = –10 V 630 pF
VGS = 0 V 170 pF
f = 1.0 MHz 100 pF
VDD = –6.0 V, ID = –2.0 A 20 ns
VGS = –4.0 V 70 ns
RG = 10 Ω 320 ns

200 ns

V

= –10 V 6.2 nC

DD

VGS = –4.0 V 1.0 nC

= –3.5 A 2.0 nC
= 3.5 A, VGS = 0 V 0.84 V

A

µ

A

µ

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

L

R

R

PG.

V

GS (−)

0

τ = 1 s

µ

Duty Cycle ≤ 1%

G

VDD

τ

VGS

Wave Form

VDS

Wave Form

VGS(−)

0

10%

VGS

VDS(−)

90%

VDS

0

10% 10%

td(on) trtd(off) tf

ton toff

90%

90%

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = −2 mA

PG.

50 Ω

RL

VDD

2

Data Sheet D15634EJ1V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

p

)

(

)

2SJ621

DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA

120

100

80

60

40

20

dT - Percentage of Rated Power - %

0

0 2 0 40 60 80 100 120 140 160

TA - Ambient Temperature - °CT

FORWARD BIAS SAFE OPERATING AREA

- Drain Current - A

D

I

−100

−0.01

DS(on)

R

Limite d

VGS = −4.5 V

−10

D(DC

I

D(pulse)

I

PW = 1 ms

−1

−0.1

Single Pulse
Mounted on FR-4 board of
50 x 50 x 1.6 mm

−0.1 −1 −10 −100

VDS - Drain to Source Voltage - V

10 ms
100 ms

5 s

1.5

1.25

ation - W

0.75

0.5

0.25

- Total Power Dissi

T

P

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

1

0

0 20406080100120140160

- Ambient Temperature - °C

A

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single Pulse

100

10

1

Without board

Mounted on FR-4 board of
50 × 50 × 1.6 mm

- Transient Thermal Resistance - °C/W

0.1

th(ch-A)

r

1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D15634EJ1V0DS

3

2SJ621

DRAIN CURRENT vs.

−12

−10

−8

−6

−4

- Drain Current - A

D

I

−2

0

0 −0.2 −0.4 −0.6 −0.8

DRAIN TO SOURCE VOLTAGE

Pulsed

−

3.0 V

4.5 V

−

1.8 V

−

VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

−1.2

VSD = −10 V
ID = −1 mA

−0.7

2.5 V

−

FORWARD TRA NSFER CHARACTERISTI CS

−100

VDS = −10 V
Pulsed

−10

−1

−0.1

−0.01

- Drain Current - A

D

I

−0.001

−0.0001

0 −0.4 −0.8 −1.2 −1.6 −2

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

VDS = −10 V
Pulsed

TA = −25°C

10

25°C
75°C

125°C

TA = −25°C

25°C
75°C

125°C

- Gate Cut-off Voltage - V

GS(off)

V

−0.2

-50 0 50 100 150

Tch - Channel Temperature - °CI

DRAIN TO SOURCE ON-STATE
RESISTANCE vs . CHANNEL TEMPERATURE

100

- Drain to Source On-state Resistance - mΩ

DS(on)

R

Pulsed

VGS = −1.8 V

80

60

40

20

0

-50 0 50 100 150

Tch - Channel Temperature - °C

−

2.5 V

−

4.5 V

−

3.0 V

1

| - Forward Transfer Admittance - S

0.1

fs

−0.01 −0.1 −1 −10

| y

- Drain Current - A

D

DRAIN TO SOURCE ON-STA T E RESISTANCE vs.
GATE TO SOURCE VOLTAGE

100

80

60

40

20

- Drain to Source On-state Resistance - mΩ

0

DS(on)

R

0 −2 −4 −6 −8

VGS - Gate to Source Voltage - V

ID = −2.0 A

Pulsed

4

Data Sheet D15634EJ1V0DS

2SJ621

DRAIN TO SOURCE ON-STAT E
RESISTANCE vs . DRAIN CURRENT

120

VGS = −1.8 V
Pulsed

100

80

60

40

- Drain to Source On-state Resistance - mΩ

DS(on)

R

−0.01 −0.1 −1 −10 −100

TA = 125°C

75°C
25°C

−25°

C

ID - Drain Current - A

- Drain to Source On-state Resistance - mΩ

DS(on)

R

DRAIN TO SOURCE ON-STAT E
RESISTANCE vs . DRAIN CURRENT

80

VGS = −3.0 V
Pulsed

70

60

50

40

30

TA = 125°C

75°C

25°C

−25°

C

DRAIN TO SOURCE ON-STAT E
RESISTANCE vs . DRAIN CURRENT

80

VGS = −2.5 V
Pulsed

70

TA = 125°C

60

50

40

30

20

75°C

25°C

−25°

C

−0.01 −0.1 −1 −10 −100

ID - Drain Current - A

DRAIN TO SOURCE ON-STAT E
RESISTANCE vs . DRAIN CURRENT

60

VGS = −4.5 V
Pulsed

50

40

30

TA = 125°C

75°C

25°C

−25°

C

- Drain to Source On-state Resistance - mΩ

DS(on)

R

- Capacitance - pF

rss

, C

oss

, C

iss

C

20

−0.01 −0.1 −1 −10 −100

ID - Drain Current - A

CAPACITANCE vs .
DRAIN TO SOURCE VOLTAGE

10000

1000

100

VGS = 0 V
f = 1 M Hz

iss

C

oss

C

rss

C

10

−0.1 −1 −10 −100

VDS - Drain to Source Voltage - V

20

- Drain to Source On-state Resistance - mΩ

−0.01 −0.1 −1 −10 −100

DS(on)

R

ID - Drain Current - A

SWITCHI NG CHA RACTERISTICS

1000

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

d(on)

t

10

−0.1 −1 −10

ID - Drain Current - A

VDD = −6.0 V

GS

= −4.0 V

V

G

=

d(off)

t

f

t

r

t

d(on)

t

Data Sheet D15634EJ1V0DS

5

2SJ621

- Diode Forward Current - A

SD

I

SOURCE TO DRAIN DIODE F ORWARD
VOLTAGE

100

Pulsed

10

1

0.1

0.01

0.4 0.6 0.8 1 1.2

VGS = 0 V

VSD - Source to Drain Voltage - V QG - Gate Charge - nC

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

−5

ID = −3.5 A

- Gate to Source Voltage - V

GS

V

−4

−3

−2

−1

0

01234567

VDD = −10 V

−

6.0 V

6

Data Sheet D15634EJ1V0DS

[MEMO]

2SJ621

Data Sheet D15634EJ1V0DS

7

2SJ621

•

The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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•

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•

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•

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M8E 00. 4