Page 1
PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
2SJ581
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION ORDERING INFORMATION
The 2SJ581 is P-Channel DMOS Field Effect Transistor that
features a low on-resistance and excellent switching
characteristics, designed for high current switching applications
such as DC to DC converter and load switch.
FEATURES
• Low on-state resistance :
DS(on)1
R
R
• Low input capacitance :
Ciss
• Narrow gate cut-off voltage width :
V
• Built-in gate protection diode.
• Suitable to automatically assembling.
= 70 mΩ TYP. (VGS = −10 V, ID = −6 A)
DS(on)2
= 120 mΩ TYP. (VGS = −4 V, ID = −6 A)
= 1210 pF TYP. (VDS = −10 V, f = 1MHz)
GS(off)
= −1.0 to −2.0 V
PART NUMBER PACKAGE
2SJ581 MP-10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Note
A
= 25 °C) P
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10
Document No. D14113EJ1V0PM00
Date Published February 1999 NS CP (K)
Printed in Japan
µ
s, Duty Cycle ≤ 1 %
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GSS(AC)
GSS(DC)
D(pulse)
I
DSS
D(DC)
T
ch
stg
−60 V
±20 V
−20, 0 V
±12 A
±48 A
1.8 W
150 °C
−55 to +150 °C
©
1999
Page 2
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SJ581
Drain Leakage Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = −60 V, VGS = 0 V
GSS
VGS = ±10 V, VDS = 0 V ±10
GS(off)VDS
= −10 V, ID = −1.0 mA
10
−
1.0
−
2.0 V
−
Forward Transfer Admittance | yfs |VDS = −10 V, ID = −6 A 5.0 S
DS(on)1VGS
Drain to Source On-state Resistance
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)2VGS
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= −10 V, ID = −6 A 70 100 m
= −4 V, ID = −6 A 120 185 m
VDS = −10 V, VGS = 0 V, f = 1 MHz
1210 pF
520 pF
180 pF
ID = −6 A, V
DD
V
= −30 V,
G
= 10
R
Ω
GS(on)
= −10 V,
15 ns
130 ns
95 ns
80 ns
ID = −12 A, VDD = −48 V,
GS(on)
= −10 V
V
42 nC
8.0 nC
10 nC
= −12 A, VGS = 0 V 1.0 V
IF = −12 A, VGS = 0 V,
di/dt = 100 A/
s
µ
120 ns
230 nC
A
µ
A
µ
Ω
Ω
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
V
GS
(−)
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
D.U.T.
G
R
RG = 10 Ω
V
GS
0
(−)
10 %
V
GS(on)
90 %
PG.
I
90 %
D
(−)
0
10 %
t
d(on)
t
r
t
on
90 %
I
D
t
d(off)
10 %
t
f
t
off
R
L
GS
V
Wave Form
V
DD
I
D
Wave Form
IG = −2 mA
50 Ω
D.U.T.
R
L
V
DD
2
Preliminary Product Information D14113EJ1V0PM00
Page 3
PACKAGE DRAWING (Unit : mm)
2SJ581
MP-10 (Isolated TO-220 class Package
for Automatically Assembling)
4.5±0.2
8.0±0.2
Gate
13.0±0.22.5±0.2
1.4±0.2
132
1.4±0.2
0.5±0.1 0.5±0.10.5±0.1
1.Gate
2.Drain
3.Source
Gate
Protection
Diode
EQUIVALENT CIRCUIT
Drain
Body
Diode
Source
Remark
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
The diode connected between the gate and source of the transistor serves as a protector against ESD.
rated voltage may be applied to this device.
Preliminary Product Information D14113EJ1V0PM00
3
Page 4
2SJ581
• The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M5 98. 8
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