NEC 2sj559 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

2SJ559

DESCRIPTION

The 2SJ559 is a switching device which can be driven directly by a

V power source.

2.5

The 2SJ559 has excellent switching characteristics, and is suitable

for use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5 V power source.

• Low gate cut-off voltage.

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ559 SC-75 (USM)

Marking: C1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage VDSS

Gate to Source Voltage V

Drain Current (DC) I

Drain Current (pulse)

Total Power Dissipation

Note1

Note2

Channel Temperature T

Storage Temperature T

µ

Notes 1. PW ≤ 10

s, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 3.0 cm

GSS m20 V

D(DC) m0.1 A

D(pulse) m0.4 A

I

T 200 mW

P

ch 150 °C

stg

2

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

−30

−55 to +150

x 0.64 mm

V

°C

PACKAGE DRAWING (Unit: mm)

0.5

1

0.75 ± 0.05

1: Source
2: Gate
3: Drain

0.8 ± 0.1

1.6 ± 0.1

2

0.2

0.5

1.6 ± 0.1

0.3

+0.1
–0

1.0

+0.1
–0

3

EQUIVALENT CIRCUIT

Gate

Gate
Protection
Diode

0.6

Drain

Source

0.15

0 to 0.1

Body
Diode

+0.1
–0.05

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D13801EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan

The mark shows major revised points.

1999

2SJ559

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

V

Zero Gate Voltage Drain Current IDSS

DS = −30 V, VGS = 0 V

Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10

Gate Cut-off Voltage VGS(off)

Forward Transfer Admittance

Drain to Source On-state Resistance

Note

Note

| yfs |

R

DS(on)1

RDS(on)2

RDS(on)3

Input Capacitance Ciss

DS = −3.0 V, ID = −10

V

DS = −3.0 V, ID = −10 mA

V

GS = −2.5 V, ID = −1.0 mA

V

GS = −4.0 V, ID = −10 mA

V

GS = −10 V, ID = −10 mA

V

DS = −3.0 V

µ

A −1.0 −1.4 −1.7

20 mS

23 60

11 23

6.0 13

5.0 pF

V

Output Capacitance Coss VGS = 0 V 15 pF

Reverse Transfer Capacitance Crss f = 1 MHz 1.3 pF

V

Turn-on Delay Time td(on)

Rise Time tr

Turn-off Delay Time td(off)

Fall Time tf

DD = −3.0 V

I

D = −10 mA

V

GS = −4.0 V

R

G = 10 Ω

140 ns

330 ns

220 ns

320 ns

−1.0

µ

A

µ

A

V

Ω

Ω

Ω

Note Plused

TEST CIRCUIT SWITCHING TIME

D.U.T.

G

PG.

V

GS

(−)

0

τ = 1 s
Duty Cycle ≤ 1%

R

τ

µ

V

GS

L

R

V

GS

Wave Form

V

DD

I

D

Wave Form

(−)

10%

0

I

D

(−)

10%

0

t

d(on)trtd(off)

90%

t

on

90%

V

GS

90%

I

D

10%

t

f

t

off

2

Data Sheet D13801EJ2V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

240

200

160

120

80

40

- Total Power Dissipation - mW

T

P

0

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

Mounted on ceramic substrate

2

of 3.0 cm

x 0.64 mm

0 30 60 90 120 150 180 210

T

A

- Ambient Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–100

–80

–60

–40

- Drain Current - mA

D

I

–20

0

0 –1 –2 –3 –4 –5

V

GS

= –10 V

V

GS

= –6 V

V

GS

= –4 V

DS

- Drain to Source Voltage - V

V

V

V

GS

GS

= –3 V

= –2.5 V

2SJ559

Pulsed

TRANSFER CHARACTERISTICS

–100

V

DS

= –3 V

Pulsed

–10

TA = 125˚C

–1

TA = 75˚C

TA = 25˚C

–0.1

- Drain Current - mA

D

I

–0.01

TA = –25˚C

–0.001

0 –0.8 –1.6 –2.4 –3.2 –4.0

V

GS

- Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

GS

= –2.5 V

V
Pulsed

50

40

TA = 125˚C

TA = 75˚C

30

20

TA = 25˚C

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

–0.1 –1 –10 –100 –1000

R

I

D

TA = –25˚C

- Drain Current - mA

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

V

DS

= –3 V

Pulsed

100

TA = –25˚C

TA = 25˚C

10

TA = 75˚C

TA = 125˚C

I - Forward Transfer Admittance - mS

fs

Iy

1

–0.1 –1 –10 –100 –1000

I

D

- Drain Current - mA

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

GS

= –4 V

V
Pulsed

50

40

30

TA = 125˚C

20

TA = 75˚C

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

–0.1 –1 –10 –100 –1000

R

I

D

- Drain Current - mA

TA = 25˚C

TA = –25˚C

Data Sheet D13801EJ2V0DS

3

2SJ559

60

50

40

30

20

10

- Drain to Source On-Stage Resistance - Ω

DS(on)

R

100

10

- Capacitance - pF

rss

, C

oss

, C

iss

C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

GS

=

–10 V

V
Pulesd

T

A

=

T

A

=

25˚C

T

A

=

–25˚C

0

–0.1 –1 –10 –100 –1000

I

D

- Drain Current - mA

75˚C

T

A

=

125˚C

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

V

GS

= 0 V

f = 1 MHz

C

oss

C

iss

C

rss

1

–1 –10 –100

V

DS

- Drain to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

60

50

I

D

=

40

30

I

D

I

D

–1 mA

=

–10 mA

=

–100 mA

20

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

0 –2 –4 –6 –8 –10

V

GS

- Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

1000

t

r

t

f

t

d(on)

100

- Switching Time - ns

f

, t

d(off)

, t

r

, t

V

DD

= –3 V

V

GS

= –

RG = 10 Ω

4 V

I

D

- Drain Current - mA

d(on)

t

10

–10 –100 –1000

t

d(off)

Pulsed

–1000

V

GS

= 0 V

Pulsed

–100

–10

–1

- Reverse Drain Current - mA

D

I

–0.1

–0.2 –0.4 –0.6 –0.8 –1.0 –1.2

4

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

V

SD

- Source to Drain Voltage - V

Data Sheet D13801EJ2V0DS

2SJ559

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The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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representative for availability and additional information.

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M8E 02. 11-1