NEC 2sj557 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SJ557

DESCRIPTION

The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.

FEATURES

• Can be driven by a 4

• Low on-state resistance

R

= 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

DS(on)1

R

= 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)

DS(on)2

R

= 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)

DS(on)3

V power source

ORDERING INFORMATION

PART NUMBER PACKAGE

★

2SJ557 SC-96 (Mini Mold Thin Type)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage VGSS
Drain Current (DC) ID(DC)
Drain Current (pulse)

Note1

Total Power Dissipation PT1
Total Power Dissipation

Note2

Channel Temperature Tch
Storage Temperature Tstg

DSS

I

D(pulse)

P

T2

–30 V

–20 / +5 V

±2.5 A

±10 A

0.2 W

1.25 W
150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit : mm)

+0.1

0.4

–0.05

+0.1

–0.15

0.65

1.5

2.8 ±0.2

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate
2 : Source
3 : Drain

EQUIVALENT CIRCUIT

Gate

Gate
Protection
Diode

Marking: XB

0.9 to 1.1

Drain

Source

0.65

0.16

0 to 0.1

Body
Diode

+0.1
–0.06

Notes 1.

PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5

sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13292EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan

The mark ★ shows major revised points.

©

1998, 1999

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ557

Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V

DSS

VDS = –30 V, VGS = 0 V –10

GSS

VGS = ±16 V, VDS = 0 V ±10

GS(off)VDS

= –10 V, ID = –1 mA –1.0 –1.7 –2.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.5 A12.5S
Drain to Source On-state Resi stance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= –10 V, ID = –1.0 A 114 155 mΩ
= –4.5 V, ID = –1.0 A 178 255 mΩ

= –4.0 V, ID = –1.0 A 212 290 mΩ
VDS = –10 V 312 pF
VGS = 0 V 117 pF
f = 1 MHz 56 pF
VDD = –10 V12ns
ID = –1.0 A7ns

GS(on)

V

= –10 V 133 ns

RG = 10

Ω 85 ns
VDD= –10 V2.8nC
ID = –2.5 A1.0nC
VGS = –4.0 V1.2nC

= 2.5 A, VGS = 0 V0.84V
IF = 2.5 A, VGS = 0 V28ns
di/dt = 50 A /

s7.8nC

µ

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

IG = 2 mA

50 Ω

D.U.T.

RL

VDD

PG.

V

GS

RG = 10 Ω

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

2

R

G

D.U.T.

R

VDD

L

V

GS

Wave Form

ID

Wave Form

V

GS

10 %

0

D

I

10 %

0

t

d(on)

V

GS(on)

90 %

I

D

t

r

t

t

on

Data Sheet D13292EJ2V0DS

d(off)

t

off

90 %

90 %

10 %

t

f

PG.

TYPICAL CHARACTERISTICS (TA = 25°C)

30

150

60

90

20

60

80

40

0

100

120

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

dT - Derating Factor - %

TA - Ambient Temperature -

˚C

FORWARD BIAS SAFE OPERATING AREA

−10 −100

I

D

- Drain Current - A

−1

V

DS

- Drain to Source Voltage - V

−100

−10

−1

−0.1

−0.1

−0.01

5 s

100

ms

10

ms

PW

=

1

ms

R

DS(on)

Limited

(@V

GS

=

−10

V)

I

D

(pulse)

I

D

(

DC

)

Single Pulse
Mounted on FR-4 Board of
50mm x 50mm x 1.6mm

−0.01

−0.001

−0.0001

−0.00001

−1

0

−2 −3 −4 −5

−10

−1

−0.1

VGS - Gate to Sorce Voltage - V

−

25˚C

25˚C

75˚C

T

A

= 125˚C

VDS = −10 V

TRANSFER CHARACTERISTICS

I

D

- Drain Current - A

−1

−10−0.1

VDS = −10V

TA = −25

˚C

25

˚C

ID - Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

1

10

0.1

0.01

−0.01

100

75

˚C

125

˚C

FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

−1

−0.1

−0.01

−10

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-State Resistance - mΩ

200

100

TA = 125˚C

75˚C

−25˚C

25˚C

300

400

500

V

GS

= −4.0 V

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate to Source Cut-off Voltage - V

V

DS

= −10 V

I

D

= −1 mA

−50

50 1000

150

−2.0

−1.6

−1.8

−1.4

−1.2

2SJ557

★

Data Sheet D13292EJ2V0DS

3

2SJ557

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

−1

−0.1−0.01

−10

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-State Resistance - mΩ

TA = 125˚C

100

300

200

500

400

V

GS

= −4.5 V

75˚C
25˚C

−25˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

−1

−0.1−0.01

−10

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-State Resistance - mΩ

50

TA = 125˚C

100

200

150

250

V

GS

= −10 V

75˚C
25˚C

−25˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

T

ch

- Channel Temperature -˚C

ID = −1.0 A

−50

0 50 100 150

50

150

100

350

250

300

200

R

DS (on)

- Drain to Source On-state Resistance - mΩ

−10 V

V

GS

= −4.0 V

−4.5 V

0

0

200

100

300

400

500

−

4

−

8

−

12

−

16

−

20

R

DS (on)

- Drain to Source On-state Resistance - mΩ

VGS - Gate to Source Voltage - V

ID = −1.0 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

C

iss

, C

oss

, C

rss

- Capacitance - pF

10

100

1000

−1 −10 −100

f = 1 MHz
V

GS

= 0V

C

iss

C

rss

C

oss

−0.1

−1

−10

I

D

- Drain Current - A

t

d(on)

, t

r

, t

d(off)

, t

f

- Switching Time - ns

1000

100

10

1

t

r

SWITCHING CHARACTERISTICS

V

DD

= −10 V

V

GS

(on) = −10 V

R

G

= 10 Ω

t

f

t

d(off)

t

d(on)

4

Data Sheet D13292EJ2V0DS

2SJ557

0.01

0.1

1

10

0.4 0.6 0.8 1.0 1.2

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

I

F

- Source to Drain Current - A

V

F(S-D)

- Source to Drain Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - S

r

th(ch-A)

- Transient Thermal Resistance - ˚C/W

10

1

100

1000

10.001 0.01 0.1 10 100 1000

Single Pulse

Without Board

Mounted on 250 mm x 35 m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board

µ

2

QG - Gate Charge - nC

0

13542

DYNAMIC INPUT CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

0

−4

−2

−6

−8

−10

V

DD

= −10 V

−6 V

ID = −2.5 A

★

Data Sheet D13292EJ2V0DS

5

[MEMO]

2SJ557

6

Data Sheet D13292EJ2V0DS

[MEMO]

2SJ557

Data Sheet D13292EJ2V0DS

7

2SJ557

M8E 00. 4

The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

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