NEC 2SJ495 Datasheet

DATA SHEET

Gate

Drain

Body
Diode

Gate Protection
Diode

Source

MOS FIELD EFFECT POWER TRANSISTORS

2SJ495

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super Low On-State Resistance

DS(on)1 = 30 mΩ MAX. (VGS = –10 V, ID = –15 A)

R
RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A)

• Low Ciss Ciss = 4120 pF TYP.

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage VDSS –60 V
Gate to Source Voltage* VGSS(AC) m20 V
Gate to Source Voltage VGSS(DC) –20, 0 V
Drain Current (DC) I
Drain Current (pulse)** ID(pulse) m120 A
Total Power Dissipation (TC = 25°C) PT 35 W
Total Power Dissipation (T
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
*f = 20 kHz, Duty Cycle ≤ 10% (+Side)

µ

**PW ≤ 10

s, Duty Cycle ≤ 1%

A = 25°C) PT 2.0 W

D(DC) m30 A

PACKAGE DIMENSIONS

(in millimeter)

10.0 ± 0.3 4.5 ± 0.2

15.0 ± 0.3

0.7 ± 0.1

2.54 2.54

3.2 ± 0.2

3 ± 0.1

4 ± 0.2

1.3 ± 0.2

1.5 ± 0.2

213

2.7 ± 0.2

12.0 ± 0.213.5 MIN.

2.5 ± 0.1

0.65 ± 0.1

1. Gate

2. Drain

3. Source

Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan

THERMAL RESISTANCE MP-45F (ISOLATED TO-220)

Channel to Case Rth(ch-c) 3.57 °C/W
Channel to Ambient Rth(ch-A) 62.5 °C/W

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.

©

1997

ELECTRICAL CHARACTERISTICS (TA = 25°C)

2SJ495

CHARACTERISTICS

SYMBOL

TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On–state Resistance RDS(on)1 VGS = –10 V, ID = –15 A 24 30 mΩ

RDS(on)2 VGS = –4 V, ID = –15 A 38 56 mΩ
Gate to Source Cutoff Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –15 A 12 24 S
Drain Leakage Current IDSS VDS = –60 V, VGS = 0 –10
Gate to Source Leakage Current IGSS VGS = m 20 V, VDS = 0 m10

µ
µ

Input Capacitance Ciss VDS = –10 V 4120 pF
Output Capacitance COSS VGS = 0 1750 pF
Reverse Transfer Capacitance Crss f = 1 MHz 580 pF
Turn-On Delay Time td(on) ID = –15 A 40 ns
Rise Time tr VGS(on) = –10 V 220 ns
Turn-Off Delay Time td(off) VDD = –30 V 600 ns
Fall Time tf RG = 10 Ω 380 ns
Total Gate Charge QG ID = –30 A 140 nC
Gate to Source Charge QGS VDD = –48 V 12 nC
Gate to Drain Charge QGD VGS = –10 V 46 nC
Body Diode Forward Voltage VF(S-D) IF = 30 A, VGS = 0 0.8 1.5 V
Reverse Recovery Time trr IF = 30 A, VGS = 0 160 ns
Reverse Recovery Charge Qrr di/dt = 100 A/µs 400 nC

A
A

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

D.U.T.

G

= 2 mA

I

50 Ω

PG.

GS

V
0

t

t = 1 s

µ

Duty Cycle ≤ 1%

D.U.T.

G

R

RG = 10 Ω

R

L

DD

V

V

GS

Wave Form

D

I

Wave Form

V

GS

V

90 %

t

on

trt

D

I

GS(on)

d(off)

10 %

D

I

D

10 % 10 %

0

t

d(on)

90 %

t

off

90 %

t

f

PG.

R

L

DD

V

2

2SJ495

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

–1000

–100

–10

- Drain Current - A

D

I

TC = 25°C
Single Pulse

–1

–0.1

Limited

=10 V)

DS(on)

GS

R

(at V

I

D(DC)

Power Dissipation Limited

–1 –10 –100

V

DS -

Drain to Source Voltage - V

I

D(pulse)

DC

1 ms

10 ms

100 ms

500 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

35

30

25

20

15

10

- Total Power Dissipation - W

T

5

P

0

20

40 60 80 100 120 140 160

T

C

- Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–125

V

GS

–100

–75

–50

- Drain Current - A

D

I

–25

0

V

V

GS

= –4 V

–2

DS

- Drain to Source Voltage - V

= –10 V

–4

–6

Pulsed

–8

FORWARD TRANSFER CHARACTERISTICS

–1000

T

ch

= –25°C

–100

25°C

125°C

–10

- Drain Current - A

D

I

–1

0

–2

GS

- Gate to Source Voltage - V

V

–4

Pulsed

V

DS

= –10 V

–6 –8

3

1 000

100

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(ch-a) = 62.5°C/W

2SJ495

10

1

0.1

0.01

- Transient Thermal Resistance - °C/W

th(t)

r

0.001

µµ

100

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

100

Tch=–25°C

25°C
75°C

125°C

10

1 m 10 m 100 m 1 10 100 1 000 10

V

DS

= –10 V

Pulsed

PW - Pulse Width - s

150

100

R

th(ch-c) = 3.57°C/W

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

50

ID = –15 A

| - Forward Transfer Admittance - S

fs

1

| y

–1

–10

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

80

60

V

GS

40

V

GS

= –10 V

20

- Drain to Source On-State Resistance - mΩ

0

DS(on)

R

–1

–10 –100

ID - Drain Current - A

–100 –1000

Pulsed

= –4 V

- Drain to Source On-State Resistance - mΩ

0 –10

DS(on)

R

GS

- Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

–2.0

–1.5

–1.0

–0.5

- Gate to Source Cutoff Voltage - V

GS(off)

0

V

–50

0 50 100 150

ch

- Channel Temperature - °C

T

–20 –30

VDS = –10 V
I

D

= –1 mA

4

2SJ495

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

80

V

60

40

VGS=-10 V

20

0

- Drain to Source On-State Resistance - mΩ

DS(on)

R

–50

0

ch

- Channel Temperature - °C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

100000

VGS = 0
f = 1 MHz

10000

- Capacitance - pF

rss

1000

, C

oss

, C

iss

C

100

–0.1

–1 –10 –100

DS

- Drain to Source Voltage - V

V

GS

= –4 V

D

= –15 A

I

C

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

Pulsed

–1000

–100

–10

- Diode Forward Current - A

SD

I

–1

V

GS

= –4 V

V

GS

= 0

0

–1.0

SD

- Source to Drain Voltage - V

V

–2.0

–3.0

SWITCHING CHARACTERISTICS

1 000

100

iss

- Switching Time - ns

C

oss

C

rss

f

, t

)
off

(
d

, t

r

, t

d(on)

t

10

1

–0.1

I

)

t

d(off

t

f

t

r

V

DD

t

d(on)

V

GS
G

R

= –30 V
= –10 V

=10 Ω

–1 –10 –100

D

- Drain Current - A

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

–0.1

–1 –10 –100

F

- Diode Current - A

I

di/dt = 50 A/ s

GS

= 0

V

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

–80

–60

V

GS

VDD=–48 V

–40

–30 V
–15 V

–20

- Drain to Source Voltage - V

DS

V

0

V

DS

40 80 120 160

G

- Gate Charge - nC

Q

I

D

= –30A

–14
–12

–10

–8
–6
–4

- Gate to Source Voltage - V

–2

GS

V

0

5

Document Name Document No.
NEC semicondacter device reliabilty/quality control system C11745E
Power MOS FET features and application to switching power supply D12971E
Application circuits using Power MOS FET TEA-1035
Safe operating area of Power MOS FET TEA-1037
Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) C11892E

2SJ495

6

[MEMO]

2SJ495

7

2SJ495

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this document.
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before using it in a particular application.

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Anti-radioactive design is not implemented in this product.

M4 96.5