NEC 2sj463a Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ463A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ463A is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ463A has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital circuits.

FEATURES

• Can be driven by a 2.5 V power source

• Low gate cut-off voltage

ORDERING INFORMATION

PART NUMBER PACKAGE

2SJ463A SC-70 (SSP)

Marking: H21

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS −30 V

Gate to Source Voltage (V

Drain Current (DC) I

Drain Current (pulse)

Total Power Dissipation P

Channel Temperature T

Storage Temperature T

µ

Note PW ≤ 10

s, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

DS = 0 V) VGSS m20 V

Note

D(DC) m0.1 A

I

D(pulse) m0.4 A

T 150 mW

ch 150 °C

stg −55 to +150 °C

PACKAGE DRAWING (Unit: mm)

2.1 ±0.1

−0

0.3

1.25 ±0.1

+0.1

2

2.0 ±0.2

0.9 ±0.1

0.65

1

0.3 0.65

3

Marking

+0.1

0.3

+0.1

0.15

−0

−0.05

1. Source

0 to 0.1

2. Gate

3. Drain

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D11198EJ2V0DS00 (2nd edition)
Date Published April 2005 NS CP(K)
Printed in Japan

The mark shows major revised points.

1996

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SJ463A

Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1

Gate Leakage Current IGSS

GS = m20 V, VDS = 0 V

V

m10

µ

A

µ

A

Gate Cut-off Voltage VGS(off) VDS = −3 V, ID = −10 µA −1.0 −1.4 −1.7 V

Forward Transfer Admittance | yfs | VDS = −3 V, ID = −10 mA 20 mS

Drain to Source On-state Resistance RDS(on)1 VGS = −2.5 V, ID = −1 mA 23 60

RDS(on)2 VGS = −4 V, ID = −10 mA 11 23

RDS(on)3 VGS = −10 V, ID = −10 mA 6 13

Ω

Ω

Ω

Input Capacitance Ciss VDS = −3 V 5 pF

Output Capacitance Coss VGS = 0 V 15 pF

Reverse Transfer Capacitance Crss f = 1 MHz 1.3 pF

Turn-on Delay Time td(on) VDD = −3 V, ID = −10 mA 140 ns

Rise Time tr VGS = −4 V 330 ns

Turn-off Delay Time td(off) RG = 10 Ω, RL = 300 Ω 220 ns

Fall Time tf 320 ns

TEST CIRCUIT SWITCHING TIME

D.U.T.

V

GS

R

L

V

GS

G

PG.

V

GS

(−)

R

0

Wave Form

V

DD

I

D

Wave Form

τ

(−)

10%

0

I

D

(−)

10%

0

t

d(on)trtd(off)

90%

90%

V

GS

90%

I

D

10%

t

f

µ

τ = 1 s
Duty Cycle ≤ 1%

2

t

on

Data Sheet D11198EJ2V0DS

t

off

TYPICAL CHARACTERISTICS (TA = 25°C)

2SJ463A

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

240

200

160

120

80

40

- Total Power Dissipation - mW

T

P

0

0

25

50

75

TA - Ambient Temperature - ˚C

TRANSFER CHARACTERISTICS

−100
V

DS

= −3 V

−10

T

A

= 125˚C

T

A

−1

−0.1

- Drain Current - mA

D

I

−0.01

−0.001

0 −0.8 −1.6 −2.4 −3.2 −4.0

= 75˚C

T

A

= 25˚C

TA = −25˚C

V

GS

- Gate to Source Voltage - V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

−100

−80

−60

−40

- Drain Current - mA

D

I

−20

125 150100

175

0

0 −1 −2 −3 −4 −5

V

GS

= −10 V

V

GS

= −6 V

V

GS

= −4 V

DS

- Drain to Source Voltage - V

V

V

V

GS

GS

= −3 V

= −2.5 V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

V

DS

= −3 V

100

TA = −25˚C

TA = 25˚C

10

TA = 75˚C

I - Forward Transfer Admittance - mS

fs

I y

1

−0.1 −1 −10 −100 −1000

TA = 125˚C

D

- Drain Current - mA

I

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

GS

= −2.5 V

V

50

40

TA = 125˚C

TA = 75˚C

30

20

TA = 25˚C

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

−0.1 −1 −10 −100 −1000

R

D

I

TA = –25˚C

- Drain Current - mA

60

50

40

30

20

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

Data Sheet D11198EJ2V0DS

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

V

GS

= −4 V

TA = 125˚C

TA = 75˚C

TA = 25˚C
TA = −25˚C

−0.1 −1 −10 −100 −1000

D

- Drain Current - mA

I

3

2SJ463A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

60

GS

=

−10 V

V

50

40

30

T

A

=

20

10

- Drain to Source On-Stage Resistance - Ω

DS(on)

R

100

10

- Capacitance - pF

rss

,C

oss

,C

iss

C

25˚C

T

A

=

−25˚C

0

−0.1 −1 −10 −100 −1000
I

D

- Drain Current - mA

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

V

GS

= 0 V

f = 1 MHz

C

oss

C

iss

C

rss

1

−1 −10 −100
V

DS

- Drain to Source Voltage - V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

60

50

I

D

=

40

30

T

A

=

75˚C

T

A

=

125˚C

20

10

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

0 −2 −4 −6 −8 −10

V

GS

- Gate to Source Voltage - V

I

D

I

D

−1 mA

=

−10 mA

=

−100 mA

SWITCHING CHARACTERISTICS

1000

t

r

t

f

t

d(on)

100

- Switching Time - ns

f

,t

d(off)

,t

r

,t

V

DD

d(on)

t

= −3 V

GS

=

−4 V

V

G

= 10 Ω

R

10

−10 −100 −1000
I

D

- Drain Current - mA

t

d(off)

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

−1000

−100

−10

−1

- Reverse Drain Current - mA

D

I

−0.1

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2

V

SD

- Source to Drain Voltage - V

4

Data Sheet D11198EJ2V0DS

2SJ463A

•

The information in this document is current as of April, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
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representative for availability and additional information.

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