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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ461
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ461 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ461 has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital circuit.
FEATURES
• Can be driven by a 2.5 V power source
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ461 SC-59 (Mini Mold)
Marking: H19
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −50 V
Gate to Source Voltage (V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
DS = 0 V) VGSS m7.0 V
Note
D(DC) m0.1 A
ID(pulse) m0.2 A
T 200 mW
ch 150 °C
stg −55 to +150 °C
PACKAGE DRAWING (Unit: mm)
+0.1
–0.05
0.4
0.950.95
2.9 ±0.2
0.3
1.1 to 1.4
2.8 ±0.2
2
1
1.5
3
Marking
0 to 0.1
0.65
+0.1
–0.05
0.4
+0.1
–0.06
0.16
+0.1
–0.15
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Drain
Body
Gate
Gate
Protection
Diode
Source
Diode
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D10730EJ4V0DS00 (4th edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1995
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2SJ461
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = −50 V, VGS = 0 V −1.0 µA
Gate Leakage Current IGSS
V
GS = m7.0 V, VDS = 0 V
Gate Cut-off Voltage VGS(off) VDS = −3.0 V, ID = −1.0 µA −0.7 −0.9 −1.3 V
Forward Transfer Admittance | yfs | VDS = −3.0 V, ID = −10 mA 12 mS
Drain to Source On-state Resistance RDS(on)1 VGS = −2.5 V, ID = −3 mA 46 100
RDS(on)2 VGS = −4.0 V, ID = −10 mA 31 50
Input Capacitance Ciss VDS = −3.0 V 6 pF
Output Capacitance Coss VGS = 0 V 9 pF
Reverse Transfer Capacitance Crss f = 1.0 MHz 1.6 pF
Turn-on Delay Time td(on) VDD = −3.0 V, ID = −20 mA 32 ns
Rise Time tr VGS = −3.0 V 270 ns
Turn-off Delay Time td(off) RG = 10 Ω, RL = 200 Ω 45 ns
Fall Time tf 130 ns
m3.0
µ
A
Ω
Ω
TEST CIRCUIT SWITCHING TIME
D.U.T.
R
PG.
V
GS
(−)
0
µ
τ = 1 s
Duty Cycle ≤ 1%
G
τ
V
GS
L
R
V
GS
Wave Form
V
DD
I
D
Wave Form
(−)
10%
0
I
D
(−)
10%
0
t
d(on)trtd(off)
90%
t
on
90%
V
GS
90%
I
D
10%
t
f
t
off
2
Data Sheet D10730EJ4V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
200
160
120
80
40
- Total Power Dissipation - mW
T
P
0
0
25
50
75
TA - Ambient Temperature -
125 150100
˚C
175
2SJ461
Data Sheet D10730EJ4V0DS
3
Page 4
2SJ461
4
Data Sheet D10730EJ4V0DS
Page 5
2SJ461
•
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M8E 02. 11-1
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