Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
2SJ449
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS –250 V
Gate to Source Voltage V
Drain Current (DC) ID(DC)
Drain Current (pulse)* ID(pulse)
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 180 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0
A = 25 ˚C) PT2 2.0 W
GSS
AS –6.0 A
m
30 V
m
6.0 A
m
24 A
10.0 ±0.3
15.0 ±0.3
0.7 ±0.1
123
MP-45F(ISOLATED TO-220)
3.2 ±0.2
3 ±0.1
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
4.5 ±0.2
2.7 ±0.2
12.0 ±0.2
MIN.
13.5
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
Drain
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SJ449
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on) 0.55 0.8 VGS = –10 V, ID = –3.0 A
Gate to Source Cutoff Voltage VGS(off) –4.0 –4.8 –5.5 VDS = –10 V, ID = –1 mA
Forward Transfer Admittance | yfs | 2.0 3.5 VDS = –10 V, ID = –3.0 A
Drain Leakage Current IDSS –100 VDS = –250 V, VGS = 0
Gate to Source Leakage Current IGSS
m
100 VGS = m30 V, VDS = 0
Input Capacitance Ciss 1040 VDS = –10 V
Output Capacitance Coss 360 VGS = 0
Reverse Transfer Capacitance Crss 70 f = 1 MHz
Turn-On Delay Time td(on) 24 ID = –3.0 A
Rise Time tr 16 VGS(on) = –10 V
Turn-Off Delay Time td(off) 47 VDD = –125 V
Fall Time tf 14 RG = 10 Ω, RL = 42 Ω
Total Gate Charge QG 23.1 ID = –6.0 A
Gate to Source Charge QGS 7.1 VDD = –200 V
Gate to Drain Charge QGD 12.9 VGS = –10 V
Body Diode Forward Voltage VF(S-D) 0.92 IF = –6.0 A, VGS = 0
Reverse Recovery Time trr 155 IF = –6.0 A, VGS = 0
Reverse Recovery Charge Qrr 930 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
PG
VGS = –20 → 0 V
RG = 25 Ω
50 Ω
ID
V
DD
D.U.T.
IAS
BV
DSS
L
DD
V
VDS
Starting Tch
PG.
VGS
0
t
t = 1 s
Duty Cycle ≤ 1 %
µ
D.U.T.
RG
RG = 10 Ω
Test Circuit 3 Gate Charge
PG.
D.U.T.
G = –2 mA
I
50 Ω
R
VDD
L
R
VDD
L
V
GS
Wave
Form
ID
Wave
Form
VGS
I
D
10 %
0
10 %
0
VGS (on)
90 %
ID
td (off)td (on)
ton toff
90 %
90 %
10 %
tftr
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SJ449
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
ID(pulse)
DS(on)
R
(at V
Limited
= –20 V)
ID(DC)
GS
Power Dissipation Limited
100 ms
DC
10 ms
–10
–1.0
ID - Drain Current - A
C = 25 ˚C
T
Single Pulse
–0.1
–1.0
–10 –100 –1000
V
DS - Drain to Source Voltage - V
PW = 100 s
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
5
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
–20
µ
–16
VGS= –20 V
–10 V
–12
–8
ID - Drain Current - A
–4
0
–5
V
DS - Drain to Source Voltage - V
–10
–15
–20
FORWARD TRANSFER CHARACTERISTICS
–100
–10
TA= –25 ˚C
25 ˚C
–1.0
75 ˚C
125 ˚C
ID - Drain Current - A
–0.1
0
–5
GS - Gate to Source Volta
V
–10
Pulsed
VDS = –10 V
–15
e - V
3
Page 4
1 000
2SJ449
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
rth(t) - Transient Thermal Resistance - ˚C/W
0.001
100
µµ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
1 m 10 m 100 m 1 10 100 1 000 10
VDS = –10 V
Pulsed
PW - Pulse Width - s
Rth(ch-a) = 62.5 ˚C/W
Rth(ch-c) = 3.57 ˚C/W
Single Pulse
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
1.0
ID = –6 A
–3 A
Pulsed
–1.2 A
1.0
|yfs| - Forward Transfer Admittance - S
0.1
–0.1
–1.0
I
D - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5
1.0
VGS = –10 V
–20 V
0.5
0
RDS(on) - Drain to Source On-State Resistance - Ω
–1.0
–10 –100
ID - Drain Current - A
–10 –100
Pulsed
0.5
0
RDS(on) - Drain to Source On-State Resistance - Ω
–5
V
GS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
–8.0
–6.0
–4.0
–2.0
0
VGS(off) - Gate to Source Cutoff Voltage - V
–50
0 50 100 150
ch - Channel Temperature - ˚C
T
–10 –15
VDS = –10 V
ID = –1 mA
4
Page 5
2SJ449
g
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
VGS = –10 V
0.5
0
–50
RDS(on) - Drain to Source On-State Resistance - Ω
0
50
100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
Ciss
Coss
100
D = –3 A
I
VGS = 0
f = 1 MHz
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 0 V
10 V
1
0.1
ISD - Diode Forward Current - A
0
0.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
100
10
1.0
Pulsed
1.5
tr
tf
td(on)
td(off)
Ciss, Coss, Crss - Capacitance - pF
10
–1.0
–10 –100 –1 000
DS - Drain to Source Voltage - V
V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
10
trr - Reverse Recovery time - ns
1.0
0.1
1.0 10 100
ID - Drain Current - A
Crss
di/dt = 50 A/ s
VGS = 0
DD = –125 V
V
td(on), tr, td(off), tf - Switching Time - ns
1.0
–0.1
–1.0 –10 –100
I
D - Drain Current - A
VGS = –10 V
RG = 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µ
-400
-300
ID = –6 A
VDD = –200 V
–20
–15
–125 V
–50 V
-200
-100
VDS - Drain to Source Voltage - V
0
10 20 30 40
Q
g - Gate Char
e - nC
–10
–5
VGS - Gate to Source Voltage - V
0
5
Page 6
2SJ449
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
–100
–10
ID = –6 A
E
AS
= 180 mJ
–1.0
V
DD = –125 V
IAS - Single Avalanche Current - A
VGS = –20 V → 0
RG = 25 Ω
–0.1
µ
100 1 m 10 m 100 m
L - Inductive Load - H
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
140
120
100
80
60
40
Energy Derating Factor - %
20
0
50 75 100 125 150
25
Starting Tch - Starting Channel Temperature - ˚C
V
DD = –125 V
RG = 25 Ω
V
GS = –20 V → 0
<
–6 A
IAS
=
6
Page 7
2SJ449
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
Page 8
2SJ449
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8
Loading...