NEC 2sj448 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SJ448 is P-Channel MOS Field Effect Transistor de-

signed for high voltage switching applications.

2SJ448

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Low On-Resistance

RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A)

• Low Ciss Ciss = 470 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

• Isolated TO-220 Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS –250 V

Gate to Source Voltage VGSS

Drain Current (DC) ID(DC)

Drain Current (pulse)* ID(pulse)

Total Power Dissipation (T

Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature T

Single Avalanche Current** IAS –4.0 A

Single Avalanche Energy** EAS 80 mJ

µ

* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0

s, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 30 W

stg –55 to +150 ˚C

m

25 V

m

4.0 A

m

16 A

10.0 ±0.3

15.0 ±0.3

0.7 ±0.1

123

MP-45F(ISOLATED TO-220)

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.2

1.5 ±0.2

2.542.54

4.5 ±0.2

2.7 ±0.2

12.0 ±0.2

MIN.

13.5

2.5 ±0.1

0.65 ±0.1

1. Gate

2. Drain

3. Source

Drain

Document No. D10029EJ1V0DS00
Date Published May 1995 P
Printed in Japan

Gate

Gate Protection
Diode

Source

Body
Diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SJ448

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on) 1.5 2.0 VGS = –10 V, ID = –20 A

Gate to Source Cutoff Voltage VGS(off) –4.0 –4.8 –5.5 VDS = –10 V, ID = –1 mA

Forward Transfer Admittance | yfs | 1.0 2.3 VDS = –10 V, ID = –20 A

Drain Leakage Current IDSS –100 VDS = –250 V, VGS = 0

Gate to Source Leakage Current IGSS

m

Input Capacitance Ciss 470 VDS = –10 V

Output Capacitance Coss 200 VGS = 0

Reverse Transfer Capacitance Crss 70 f = 1 MHz

Turn-On Delay Time td(on) 13 ID = –2.0 A

Rise Time tr 7 VGS(on) = –10 V

Turn-Off Delay Time td(off) 34 VDD = –125 V
Fall Time tf 10 RG = 10 Ω

Total Gate Charge QG 15 ID = –4.0 A

Gate to Source Charge QGS 4 VDD = –200 V

Gate to Drain Charge QGD 9 VGS = –10 V

Body Diode Forward Voltage VF(S-D) 1.0 IF = –4.0 A, VGS = 0

Reverse Recovery Time trr 195 IF = –4.0 A, VGS = 0

Reverse Recovery Charge Qrr 760 di/dt = 50 A/µs

UNIT

Ω

V

S

µ

A

µ

10 VGS = m25 V, VDS = 0

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T.

RG

RG = 10 Ω

PG

VGS = –20 → 0 V

RG = 25 Ω

50 Ω

ID

VDD

D.U.T.

IAS

BV

DSS

L

DD

V

VDS

Starting Tch

PG.

VGS
0

t

t = 1 s
Duty Cycle ≤ 1 %

µ

Test Circuit 3 Gate Charge

PG.

D.U.T.

I

G = –2 mA

50 Ω

R

VDD

L

R

VDD

L

V

GS

Wave
Form

ID
Wave
Form

VGS

I

D

0

10 %

10 %

0

VGS (on)

90 %

ID

td (off)td (on)

ton toff

90 %

90 %

10 %

tftr

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SJ448

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

–100

ID(pulse)

= 20 V)

–10

RDS(on) Limited (V

–1.0

- Drain Current - A

D

I

GS

ID(DC)

Power dissipation Limitted

10 ms

DC

PW = 100 s

1 ms

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

35

30

25

20

15

10

5

PT - Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

T

C - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–10

VGS= –20 V

–10 V

–5

ID - Drain Current - A

Pulsed

TC = 25 ˚C
Single Pulse

–0.1

–1

–10 –100 –1000

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

–100

–10

TA = –25 ˚C

25 ˚C

75 ˚C
125 ˚C

–1.0

ID - Drain Current - A

–0.1

0

–5

GS - Gate to Source Volta

V

–10

Pulsed

VDS = –10 V

–15

e - V

0

–5

V

DS - Drain to Source Voltage - V

–10

–15

–20

3

1 000

2SJ448

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

rth(t) - Transient Thermal Resistance - ˚C/W

0.001

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

TA = –25 ˚C

10

25 ˚C
75 ˚C

125 ˚C

100

VDS = –10 V
Pulsed

Rth(ch-a) = 62.5 ˚C/W

Rth(ch-c) = 4.17 ˚C/W

Single Pulse

1 m 10 m 100 m 1 10 100 1 000 10

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

3.0
Pulsed

ID = –4 A

–2 A

2.0

–0.8 A

1.0

|yfs| - Forward Transfer Admittance - S

0.1
–0.1

–1.0

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

6.0

4.0

2.0

0

RDS(on) - Drain to Source On-State Resistance - Ω

–0.1

VGS = –10 V

–1.0 –10

ID - Drain Current - A

–10 –100

Pulsed

1.0

0

RDS(on) - Drain to Source On-State Resistance - Ω

–5

V

GS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

–8.0

–6.0

–4.0

–2.0

0

VGS(off) - Gate to Source Cutoff Voltage - V

–50

0 50 100 150

ch - Channel Temperature - ˚C

T

–10 –15

VDS = –10 V
I

D = –1 mA

4

2SJ448

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

4.0

3.0

2.0

VGS= –10 V

1.0

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

–50

0

ch

- Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

1 000

C

iss

100

- Capacitance - pF

rss

, C

10

oss

, C

iss

C

1.0
–1.0

–10 –100 –1 000

DS

- Drain to Source Voltage - V

V

D

I

VGS = 0
f = 1 MHz

C

oss

C

rss

= –2 A

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

VGS = 0 V

0

10 V

0.5

SD

- Source to Drain Voltage - V

V

1

- Diode Forward Current - A

0.1

SD

I

SWITCHING CHARACTERISTICS

1 000

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1.0
–0.1

–1.0 –10 –100

D

- Drain Current - A

I

1.0

t

r

t

f

t

d(off)

t

d(on)

V

DD

= –125 V

V

GS

= –10 V

G

= 10 Ω

R

Pulsed

1.5

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10 000

1 000

100

- Reverse Recovery time - ns

rr

t

10

0.1

1.0 10 100

D

- Drain Current - A

I

di/dt = 50 A/ s

GS

= 0

V

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

–200

VDD= –200 V
–125 V
–50 V

–100

- Drain to Source Voltage - V

DS

V

0

4 8 12 16

g

- Gate Charge - nC

Q

ID = –6 A

–16

–12

–8

–4

- Gate to Source Voltage - V

GS

V

0

5

2SJ448

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

–100

–10

ID = –4 A

E

AS

= 80 mJ

–1.0

V

IAS - Single Avalanche Current - A

DD = –125 V

VGS = –20 V → 0
RG = 25 Ω

–0.1

100 1 m 10 m 100 m

µ

L - Inductive Load - H

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160

140

120

100

80

60

40

Energy Derating Factor - %

20

0

50 75 100 125 150

25

Starting T

ch - Starting Channel Temperature - ˚C

V

DD = –125 V

RG = 25 Ω
VGS = –20 V → 0

<

–4 A

IAS

=

6

2SJ448

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

7

2SJ448

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

8