![](/html/af/af87/af874d36c4f0fe902b9a9ea9db76ffe85852284deabd3c479f7d3009a0848756/bg1.png)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
2SJ411
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
FEATURES
• Radial taping supported
• Can be directly driven by 5-V IC
• Low ON resistance
DS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A
R
RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PACKAGE DIMENSIONS (in mm)
7.0 MAX. 1.2
2.0
0.8 ±0.1
3.0 MAX.
0.6 ±0.1
0.6 ±0.1
0.6 ±0.1
1.71.7
1.5
G D S
4.0 MAX.
9.0 MAX.12.0 MIN.
0.55 ±0.1
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
Protection
Diode
Internal
Diode
Source (S)
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 µs ±20.0 A
Total Power Dissipation PT1 TA = 25 ˚C 1.0 W
Total Power Dissipation PT2 TC = 25 ˚C 6.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Duty cycle ≤ 1 %
1996
![](/html/af/af87/af874d36c4f0fe902b9a9ea9db76ffe85852284deabd3c479f7d3009a0848756/bg2.png)
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –10
Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.4 –2.0 V
Forward Transfer Admittance |yfs|VDS = –10 V, ID = –2.5 A 3.0 S
Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –2.5 A 0.175 0.24 Ω
Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –2.5 A 0.096 0.11 Ω
Input Capacitance Ciss VDS = –10 V, VGS = 0 790 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 280 pF
Turn-On Delay Time td(on) VDD = –15 V, ID = –2.5 A 10 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 185 ns
Gate Input Charge QG VDS = –24 V 29.8 nC
Gate to Source Charge QGS
Gate to Drain Charge QGD
Internal Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 1.0 V
Internal Diode Reverse Recovery Time
Internal Diode Reverse Recovery Charge
trr IF = 5.0 A, VGS = 0 140 ns
Qrr
f = 1.0 MHz
VGS(on) = –10 V
RG = 10 Ω, RL = 6 Ω
VGS = –10 V
ID = –5.0 A, IG = –2 mA
di/dt = 50 A/µs
580 pF
110 ns
195 ns
2.7 nC
11.5 nC
160 nC
2SJ411
µ
A
µ
A
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
0 25 50 75 125 150
T
A
- Ambient Temperature - ˚C
100
FORWARD BIAS SAFE OPERATING AREA
–100
–50
–20
R
DS(on)
Limited
D(pulse)
= –20 A
PW = 1 mS
I
–10
I
D(DC)
–5
–2
–1
- Drain Current - A
D
I
–0.5
TC = 25 ˚C
–0.2
Single pulsed
–0.1
–1 –5 –10 –50 –100
= –5 A
DC
–2 –20
DS
- Drain to Source Voltage - V
V
PW = 10 mS
PW = 100 mS
2