NEC 2SJ411 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL SIGNAL MOS FET

FOR SWITCHING

2SJ411

The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.

FEATURES

• Radial taping supported

• Can be directly driven by 5-V IC

• Low ON resistance

DS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A

R

RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in mm)

7.0 MAX. 1.2

2.0

0.8 ±0.1

3.0 MAX.

0.6 ±0.1

0.6 ±0.1

0.6 ±0.1

1.71.7

1.5

G D S

4.0 MAX.

9.0 MAX.12.0 MIN.

0.55 ±0.1

EQUIVALENT CIRCUIT

Drain (D)

Gate (G)

Gate
Protection
Diode

Internal
Diode

Source (S)

PIN
CONNECTIONS

G: Gate
D: Drain
S: Source

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 µs ±20.0 A

Total Power Dissipation PT1 TA = 25 ˚C 1.0 W
Total Power Dissipation PT2 TC = 25 ˚C 6.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.

The information in this document is subject to change without notice.

Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

Duty cycle ≤ 1 %

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –10
Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.4 –2.0 V
Forward Transfer Admittance |yfs|VDS = –10 V, ID = –2.5 A 3.0 S
Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –2.5 A 0.175 0.24 Ω
Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –2.5 A 0.096 0.11 Ω
Input Capacitance Ciss VDS = –10 V, VGS = 0 790 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 280 pF
Turn-On Delay Time td(on) VDD = –15 V, ID = –2.5 A 10 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 185 ns
Gate Input Charge QG VDS = –24 V 29.8 nC
Gate to Source Charge QGS
Gate to Drain Charge QGD
Internal Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 1.0 V
Internal Diode Reverse Recovery Time
Internal Diode Reverse Recovery Charge

trr IF = 5.0 A, VGS = 0 140 ns
Qrr

f = 1.0 MHz

VGS(on) = –10 V
RG = 10 Ω, RL = 6 Ω

VGS = –10 V
ID = –5.0 A, IG = –2 mA

di/dt = 50 A/µs

580 pF

110 ns
195 ns

2.7 nC

11.5 nC

160 nC

2SJ411

µ

A

µ

A

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0 25 50 75 125 150

T

A

- Ambient Temperature - ˚C

100

FORWARD BIAS SAFE OPERATING AREA

–100

–50
–20

R

DS(on)

Limited

D(pulse)

= –20 A

PW = 1 mS

I

–10

I

D(DC)

–5
–2

–1

- Drain Current - A

D

I

–0.5

TC = 25 ˚C

–0.2

Single pulsed

–0.1

–1 –5 –10 –50 –100

= –5 A

DC

–2 –20

DS

- Drain to Source Voltage - V

V

PW = 10 mS

PW = 100 mS

2