NEC 2sj358 Datasets

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ358

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

The 2SJ358 is a P-channel vertical MOS FET that can

Package Drawings (unit: mm)

be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.

5.7 ±0.1

2.0 ±0.2

1.5 ±0.1

The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.

FEATURES

• New-type compact package

Has advantages of packages for small signals and for

0.5 ±0.1

1.0

2.1

0.55

4.2

231

0.85 ±0.1

3.65 ±0.1

0.5 ±0.1

5.4 ±0.25

power transistors, and compensates those disadvan-

tages

• Can be directly driven by an IC operating at 5 V.

• Low on-resistance

RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A

R

DS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

Equivalent Circuit

Drain (D)

Gate (G)

Gate Protect
Diode

Source (S)

Internal
Diode

Electrode Connection

1. Source

2. Drain

3. Gate

Marking: UA2

0.4 ±0.05

ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)

Parameter Symbol Conditions Ratings Unit

Drain-Source Voltage VDSS VGS = 0 –60 V

Gate-Source Voltage VGSS VDS = 0 –20/+10 V

Drain Current (DC) ID(DC) –/+3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms –/+6.0 A

Total Power Loss P

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P

Printed in Japan

Duty Cycle ≤ 1 %

T

The information in this document is subject to change without notice.

Mounted on ceramic board of 7.5 cm

2

× 0.7 mm 2.0 W

©

1994

ELECTRICAL SPECIFICATIONS (Ta = +25 ˚C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Drain Shut-down Current IDSS VDS = –60 V, VGS = 0 –10

Gate Leak Current IGSS VGS = –16/+10 V, VDS = 0 –/+10

Gate Cutoff Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.4 –2.0 V

Forward Transfer Admittance
Drain-Source On-Resistance RDS(on)1 VGS = –4 V, ID = –1.5 A 0.29 0.40 Ω

Drain-Source On-Resistance RDS(on)2 VGS = –10 V, ID = –1.5 A 0.18 0.30 Ω

Input Capacitance Ciss VDS = –10 V, VGS = 0, 600 pF

Output Capacitance Coss

Feedback Capacitance Crss 120 pF

On-Time Delay td(on) VDD = –25 V, ID = –1.5 A 6 ns

Rise Time tr

Off-Time Delay td(off)

Fall Time tf 95 ns

Gate Input Charge QG VDS = –48 V, 23.9 nC

Gate-Source Chanrge QGS

Gate-Drain Charge QGD

Internal Diode Reverse trr IF = 3.0 A 95 ns
Recovery Time di/dt = 50 A/µs

Internal Diode Reverse Qrr 118 nC

Recovery Charge

|yfs| VDS = –10 V, ID = –1.0 A 1.8 S

f = 1.0 MHz

V

= –10 V

GS(on)

R

= 10 Ω, RL = 17 Ω

G

VGS = –10 V,

ID = –3.1 A, IG = –2 mA

300 pF

35 ns

155 ns

1.5 nC

8.1 nC

2SJ358

µ

A

µ

A

CHARACTERISTICS CURVES (Ta = +25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT – Derating Factor – %

20

25

0 50 75 100 125 150

a – Ambient Temperature – ˚C

T

FORWARD BIAS SAFE OPERATING AREA

–10

–5

–2

–1

–0.5

ID – Drain Current – A

–0.2

–0.1

Single Pulse

–0.05

–1

–0.5 –2 –5 –10 –20 –100

DS – Drain to Source Voltage – V

V

DS

10 ms

PW = 100 ms

1 ms

–50

2

2SJ358

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–10

Pulsed

–8

–6

–10 V

–4.5 V

–4.0 V

–3.5 V

–4

= –2.0 V

GS

V

–3.0 V

–2.5 V

ID – Drain Current – A

–2

0–2–3–4–5

–1

DS – Drain to Source Voltage – V

V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

VDS = –10 V
Pulsed

Ta = –25 ˚C

Ta = 25 ˚C

0.1

1

Ta = 0 ˚C

–10

VDS = –10 V
Pulsed

–1

Ta = 150 ˚C

–0.1

–0.01

–0.001

ID – Drain Current –A

–0.0001

–0.00001

–1

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT

0.7

V

GS = –4 V

Pulsed

0.6

0.5

0.4

0.3

TRANSFER CHARACTERISTICS

Ta = –25 ˚C

Ta = 0 ˚C

Ta = 25 ˚C

Ta = 75 ˚C

–2 –3

GS – Gate to Source Voltage – V

V

Ta = 150 ˚C

Ta = 75 ˚C

–4

0.01
Ta = 150 ˚C

Ta = 75 ˚C

|yfs| – Forward Transfer Admittence – S

0.001
–0.0001

–0.001

I

–0.01 –0.1 –1

D – Drain Current – A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.5
V

GS = –10 V

Pulsed

0.4

Ta = 150 ˚C

Ta = 75 ˚C

0.3

0.2

0.1

RDS(on) – Drain to Source On-State Resistance – Ω

0

–0.001

Ta = 25 ˚C

Ta = 0 ˚C

–0.01

I

D – Drain Current – A

–0.1 –1 –10

Ta = –25 ˚C

0.2

Ta = 25 ˚C

0.1

0

–0.01

RDS(on) – Drain to Source On-State Resistance – Ω

–0.01 –0.1

Ta = 0 ˚C

Ta = –25 ˚C

D – Drain Current – A

I

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

0.6

0.4
ID = 3.0 A

0.2

ID = 1.5 A

–2

0

RDS(on) – Drain to Source On-State Resistance – Ω

–4 –6 –8 –10 –12 –14 –16 –18 –20

V

GS – Gate to Source Voltage – V

–1

–10

Pulsed

3

2SJ358

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

–10

VGS = 0
Pulsed

–1

–0.1

–0.01

–0.001

ISD – Diode Forward Current – A

–0.0001

–0.2

1000

100

10

–0.4 –0.6 –0.8 –1.0 –1.2

SD – Source to Drain Voltage – V

V

SWITCHING CHARACTERISTICS

VDD = –25 V
VGS(ON) = –10 V

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

10000

Ciss, Coss, Crss – Capacitance – pF

td(off)

tf

tr

td(on)

1000

100

10

1000

100

VGS = 0
f = 1 MHz

Crss

–1

VDS – Drain to Source Voltage – V

REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT

VGS = 0
di/dt = 50 A/ s

µ

–10 –100

Ciss

Coss

td(on), tr, td(off), tr – Switching Time – ns

0.1

110

ID – Drain Current – A

1000

Single Pulse
Using ceramic board
of 7.5 cm

100

10

1

0.1
1 m

rth(j–a) – Transient Thermal Resistance – ˚C/W

trr – Reverse Recovery Time – ns

10

–0.1 –0.5 –5

–0.05

ID – Diode Forward Current – A

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

2

× 0.7 mm

10 m 1

100 m

PW – Pulse Width – s

10 100

–1 –10

4

RELATED DOCUMENTS

Document Name Document No.

Semiconductor Device Mounting Technology Manual IEI-1207

NEC Semiconductor Device Reliability/Quality Control System TEI-1202

Guide to Quality Assurance for Semiconductor Device MEI-1202

2SJ358

5

[MEMO]

2SJ358

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation

Standard:Computer, Office equipment, Communication equipment, Test and Measurement equipment,

Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.

Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime

systems, etc.

M4 92.6