Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FET
FOR HIGH SWITCHING
2SJ355
The 2SJ355 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A
DS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A
R
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
0.42
±0.06
0.8 MIN.
S
1.5
1.6 ±0.2
D
0.47
±0.06
3.0
G
2.5 ±0.1
0.42
±0.06
1.5 ±0.1
4.0 ±0.25
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
PIN CONNECTIONS
Source
S:
Drain
D:
Gate
G:
Marking: PQ
Gate (G)
Gate
protection
diode
Internal
diode
Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ±2.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms ±4.0 A
Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
Document No. D11217EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Duty cycle ≤ 1 %
1996
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –10
Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V
Forward Transfer Admittance |yfs|VDS = –10 V, ID = –1.0 A 1.0 S
Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –1.0 A 0.50 0.60 Ω
Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –1.0 A 0.26 0.35 Ω
Input Capacitance Ciss VDS = –10 V, VGS = 0, 300 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 120 pF
Turn-On Delay Time td(on) VDD = –25 V, ID = –1.0 A 5.5 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 130 ns
Gate Input Charge QG VDS = –24 V, 12.2 nC
Gate to Source Charge QGS
Gate to Drain Charge QGD
Internal Diode Reverse Recovery Time
Internal Diode Reverse Recovery Charge
trr I F = 2.0 A, 95 ns
Qrr
f = 1.0 MHz
VGS(on) = –10 V
RG = 10 Ω, RL = 25 Ω
VGS = –10 V,
ID = –1.8 A, IG = –2 mA
di/dt = 50 A/µs
245 pF
32 ns
110 ns
1.2 nC
4.6 nC
85 nC
2SJ355
µ
A
µ
A
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
25 50 75 100 125 150
A
- Ambient Temperature - ˚C
T
FORWARD BIAS SAFE OPERATING AREA
–10
–5
–2
–1
–0.5
- Drain Current - A
D
I
–0.2
–0.1
–0.05
Single pulse
–0.5
V
10 ms
PW = 100 ms
DC
DS
- Drain to Source Voltage - V
1 ms
–100–1 –2 –5 –10 –20 –50
2
Page 3
2SJ355
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–5
–4
–10 V
–4.5 V
–3
–2
ID - Drain Current - A
–1
0
–1 –2 –3 –4 –5
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = –10 V
Pulsed
1
TA = –25 ˚C
0.1
TA = 0 ˚C
TA = 150 ˚C
0.01
|yfs| - Forward Transfer Admittance - S
0.001
–0.0001
D - Drain Current - A
I
–4.0 V
TA = 75 ˚C
Pulsed
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
TA = 25 ˚C
–10
TRANSFER CHARACTERISTICS
DS = –10 V
V
Pulsed
–1
TA = 150 ˚C
–0.1
TA = –25 ˚C
–0.01
TA = 0 ˚C
TA = 25 ˚C
TA = 75 ˚C
–0.001
ID - Drain Current - A
–0.0001
–0.00001
–1
–2 –3 –4
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
VGS = –4 V
Pulsed
0.8
TA = 150 ˚C
0.6
TA = 75 ˚C
TA = 25 ˚C
0.4
TA = 0 ˚C
TA = –25 ˚C
0.2
RDS(on) - Drain to Source On-State Resistance - Ω
–1–0.001 –0.01 –0.1
0
–0.001
D - Drain Current - A
I
–10–0.01 –0.1 –1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.6
VGS = –10 V
Pulsed
0.4
TA = 150 ˚C
TA = 75 ˚C
TA = 25 ˚C
0.2
TA = 0 ˚C
RDS(on) - Drain to Source On-State Resistance - Ω
0
–0.001
TA = –25 ˚C
ID - Drain Current - A VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
Pulsed
0.8
0.6
ID = 2.0 A
0.4
0.2
–10–0.01 –0.1 –1
RDS(on) - Drain to Source On-State Resistance - Ω
0
ID = 1.0 A
–20–2 –4 –6 –8 –10 –12 –14 –16 –18
3
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2SJ355
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
V
GS
= 0
Pulsed
–1
–0.1
–0.01
- Diode Forward Current - A
–0.001
SD
I
–0.0001
–0.2
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
VDD = 25 V
V
GS(on)
= –10 V
100
- Switching Time -ns
f
, t
10
d(off)
, t
r
, t
d(on)
t
t
t
d(off)
d(on)
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10 000
1 000
C
- Capacitance - pF
rss
, C
100
oss
, C
iss
C
–1.2–0.4 –0.6 –0.8 –1.0
10
–1
V
GS
= 0
f = 1 MHz
V
DS
- Drain to Source Voltage- V
iss
C
oss
C
rss
–100–10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1 000
t
f
t
r
100
- Reverse Recovery Time - ns
rr
t
GS
= 0
V
di/dt = 50 A/ s
µ
1 000
- Transient Thermal Resistance - ˚C/W
th(j-a)
r
0
–0.1
Single Pulse
Using ceramic board
of 7.5 cm
100
10
1
1 m
D
- Drain Current -A
I
2
× 0.7 mm
–10–1
10
–0.1
F
- Diode Forward Current - A
I
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
110 m 100 m 10 100
PW - Pulse Width -s
–10–0.5 –1 –5
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Page 5
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
2SJ355
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2SJ355
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2
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