Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
2SJ353
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Radial taping supported
• Can be directly driven by output of 5-V IC
• Low ON resistance
DS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A
R
RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A
PACKAGE DIMENSIONS (in mm)
0.8 ±0.1
0.6 ±0.1
7.0 MAX.
1.71.7
GDS
0.6 ±0.1
0.6 ±0.1
1.5
1.2
2.0
3.0 MAX.
12.0 MIN. 9.0 MAX.
0.55 ±0.1
4.0 MAX.
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
Source
S:
D:
Drain
G:
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –60 V
Gate to Source Voltage VGSS VDS = 0 ±20/+10 V
Drain Current (DC) ID(DC) ±1.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±3.0 A
Total Power Dissipation PT 1.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Duty cycle ≤ 1 %
©
1996
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –60 V, VGS = 0 –10
Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.0 V
Forward Transfer Admittance |yfs|VDS = –10 V, ID = –1.0 A 1.0 S
Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –0.8 A 0.58 0.68 Ω
Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –1.0 A 0.33 0.37 Ω
Input Capacitance Ciss VDS = –10 V, VGS = 0, 320 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 70 pF
Turn-On Delay Time td(on) VDD = –30 V, ID = –1.0 A 5 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 20 ns
f = 1.0 MHz
VGS(on) = –10 V,
RG = 10 Ω, RL = 30 Ω
200 pF
15 ns
40 ns
2SJ353
µ
A
µ
A
2
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SJ353
DERATING FACTOR OF FORWARD
BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30 60 90 120 150
A
- Ambient Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–5
–4
FORWARD BIAS SAFE OPERATING AREA
–10
–5
–2
–1
–0.5
- Drain Current - A
D
I
–0.2
Single pulse
–0.1
–2 –5 –10 –20 –50 –100
–1
V
TRANSFER CHARACTERISTICS
–10
VDS = 10 V
–1
PW = 100 ms
DC
DS
- Drain to Source Voltage - V
1 ms
10 ms
–3
–10 V
–2
- Drain Current - A
D
I
–1
0
–1 –2 –3 –4 –5
V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
V
DS
= –10 V
1
0.1
–4.0 V
–4.5 V
–3.5 V
VGS = –2.0 V
DS
- Drain to Source Voltage - V
TA = –25 ˚C
25 ˚C
–3.0 V
–2.5 V
75 ˚C
–0.1
- Drain Current - A
D
I
–0.01
–0.001
–0.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.4
VGS = –4 V
1.2
1
0.8
0.6
0.4
TA = 75 ˚C
25 ˚C
–25 ˚C
GS
- Gate to Source Voltage - V
TA = 75 ˚C
25 ˚C
–25 ˚C
–4–1 –1.5 –2 –2.5 –3 –3.5
| - Forward Transfer Admittance - S
fs
|y
0.01
–0.001
I
D
- Drain Current - A
0.2
- Drain to Source On-State Resistance - Ω
DS(on)
0
–1–0.01 –0.1
R
–0.01
–0.1 –1 –10
I
D
- Drain Current - A
3
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2SJ353
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
VGS = –10 V
0.8
0.6
0.4
TA = 75 ˚C
25 ˚C
–25 ˚C
0.2
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
–0.01
–0.1 –1 –10
D
- Drain Current - A
I
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1 000
500
200
100
- Capacitance - pF
rss
, C
50
oss
, C
iss
C
20
V
GS
= 0
f = 1 MHz
10
–2 –5 –100 –10–0.2 –0.5 –1 –2 –5
–1
DS
- Drain to Source Voltage - V
V
–10 –20 –50
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1
0.8
ID = –0.8 A
0.6
–1.0 A
0.4
0.2
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
–4 –8 –12 –16 –20
GS
- Gate to Source Voltage - V
V
SWITCHING CHARACTERISTICS
100
t
V
V
R
DD
GS(on)
G
f
t
d(off)
t
f
t
d(on)
= –30 V
= –10 V
= 10 Ω
50
C
iss
20
C
oss
C
rss
10
- Switching Time - ns
f
, t
5
d(off)
, t
r
, t
2
d(on)
t
1
–0.1
D
- Drain Current - A
I
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
–1
–0.1
–0.01
- Diode Forward Current - A
SD
I
–0.001
0.2 0.4 0.6 0.8 1
V
SD
- Source to Drain Voltage - V
4
1.2
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REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
2SJ353
5
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2SJ353
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2
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