Page 1
DATA SHEET
SILICON TRANSISTOR
2SD2463
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2463 is a Darlington connection transistor with on-
chip dumper diode in collector to emitter and zener diode in
collector to base. This transistor is ideal for use in acuator
drives such as motors, relays, and solenoids.
FEATURES
• Cost reduction available due to on-chip dumper diode (C to
E) and zener diode ( C to B)
• Low collector saturation voltage
• Insulation type package supportable for radial taping
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C(DC)
C(pulse)
B(DC)
T
T
j
stg
TC = 25°C
PW ≤ 10 ms, Duty cycle ≤ 50%, TC = 25°C
TC = 25°C
PACKAGE DRAWING (UNIT: mm)
31±4
31±4
8.0
±2.0
±3.0
0.2 A
1.0 W
6.0 W
150
−55 to +150 °C
V
V
V
A
A
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16158EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Turn-off time t
CBO
CE(sat)IC
BE(sat)IC
VCB = 20 V, IE = 0 10
VCE = 2.0 V, IC = 0.5 A 1000
FE1
VCE = 2.0 V, IC = 1.0 A 2000 30000
FE2
= 1.0 A, IB = 1.0 mA 0.9 1.2 V
= 1.0 A, IB = 1.0 mA 1.6 2.0 V
IC = 1.0 A, VCC= 20 V
on
I
= −IB2 = 0.5 mA
stg
B1
R
= 20 Ω
f
L
hFE CLASSIFICATION
Marking M L K
h
FE2
2000 to 5000 4000 to 10000 8000 to 30000
0.5
3.0
1.0
2SD2463
A
µ
−
−
s
µ
s
µ
s
µ
2
Data Sheet D16158EJ1V0DS
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2SD2463
Data Sheet D16158EJ1V0DS
3
Page 4
2SD2463
•
The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4
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