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SILICON POWER TRANSISTOR
DATA SHEET
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NPN SILICON EPITAXIAL TRANSISTOR
The 2SD2165 is a single power transistor developed especially
for high h
reducing power dissipation because its h
FE. This transistor is ideal for simplifying drive circuits and
FE is as high as that of
PACKAGE DRAWING (UNIT: mm)
10.0 ±0.3
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
15.0 ±0.3
FEATURES
• High hFE and low VCE(sat):
h
FE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
V
CE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 6.0 A
Collector current (pulse) IC(pulse) 10
Base current (DC) IB(DC) 1.0 A
Total power dissipation (TC = 25°C) PT 30 W
Total power dissipation (TA = 25°C) PT 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note
A
123
2SD2165
4.5 ±0.2
φ
3.2 ±0.2
3 ±0.1
4 ±0.2
13.5 MIN. 12.0 ±0.2
1.3 ±0.20.7 ±0.1
1.5 ±0.2
2.54 TYP.2.54 TYP.
Electrode Connection
1. Base
2. Collector
3. Emitter
2.7 ±0.2
2.5 ±0.1
0.65 ±0.1
Note PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
2002
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
2SD2165
Collector cutoff current ICBO VCB = 60 V, IE = 0 A 10
Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 A 10
DC current gain hFE1 VCE = 5.0 V, IC = 1.0 A
DC current gain hFE2 VCE = 5.0 V, IC = 3.0 A
Collector saturation voltage VCE(sat) IC = 3.0 A, IB = 30 mA
Base saturation voltage VBE(sat) IC = 3.0 A, IB = 30 mA
Note
800 1,300 3,200
Note
500 1,000
Note
0.3 1.0 V
Note
1.2 V
Gain bandwidth product fT VCE = 5.0 V, IC = 0.1 A 110 MHz
Collector capacitance Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE1 CLASSIFICATION
Marking M L K
hFE1 800 to 1,600 1,000 to 2,000 1,600 to 3,200
µ
A
µ
A
2
Data Sheet D13178EJ3V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
(W)
T
Total Power Dissipation P
2SD2165
Derating dT (%)
Case Temperature TC (°C)
(A)
C
Collector Current I
C/W)
°
(
(t)
Case Temperature TC (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Without heat sink
With infinite heatsink
Transient Thermal Resistance r
Pulse Width PW (s)
Data Sheet D13178EJ3V0DS
3
Page 4
2SD2165
Pulse test
(V)
BE(sat)
Base Saturation Voltage V
(A)
C
Collector Current I
(V)
CE(sat)
Collector Saturation Voltage V
Collector to Emitter Voltage VCE (V)
= 200 A • I
C
I
= 1000 A
C
I
B
B
• I
= 500 A
C
I
= 200 A
C
I
B
• I
B
• I
= 100 A • I
C
I
B
FE
DC Current Gain h
Collector Current IC (A)
(MHz)
T
Gain Bandwidth Product f
4
Collector Current IC (A)
(pF)
ob
Collector Current IC (A)
Collector Capacitance C
Collector to Base Voltage VCB (V)
Data Sheet D13178EJ3V0DS
Page 5
2SD2165
•
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without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
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representative for availability and additional information.
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M8E 02. 11-1
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