Page 1
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Total power dissipation P
Junction temperature T
Storage temperature T
*PW ≤ 10 ms, duty cycle ≤ 50%
CBO
CEO
EBO
C(DC)
*
C(pulse)
T(Ta = 25°C)
j
stg
60±10
60±10
7.0 V
±1.0
±2.0
1.0 W
150
−55 to +150 °C
V
V
A
A
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Fall time t
CE(sat)
BE(sat)
CBO
EBO
** VCE = 2.0 V, IC = 0.2 A 1000
FE2
** VCE = 2.0 V, IC = 0.5 A 2000 30000
FE2
ON
stg
f
VCB = 40 V, IE = 0 0.5
VEB = 5.0 V, IC = 0
** IC = 0.5 A, IB = 0.5 mA 1.5 V
** IC = 0.5 A, IB = 0.5 mA 2.0 V
IC = 0.5 A, RL = 100 Ω
I
= −IB2 = 0.1 mA, VCC = 50 V
B1
* *Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
h
FE2
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2000 to 5000 4000 to 10000 8000 to 30000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
0.5
1.0
1.0
1.0″
µ
mA
µ
µ
µ
A
s
s
s
2002
1998©
Page 2
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
2SD1843
2
Data Sheet D16200EJ1V0DS
Page 3
2SD1843
SWICHING TIME (ton, t
, tf) TEST CIRCUIT
stg
Data Sheet D16200EJ1V0DS
3
Page 4
2SD1843
•
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M8E 00. 4
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