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SILICON POWER TRANSISTOR
DATA SHEET
FEATURES
• High DC current gain due to Darlington connection
• Large current capacity and low V
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 8.0 V
Collector current (DC) IC(DC) ±3.0 A
Collector current (pulse) IC(pulse)* ±5.0 A
Total power dissipation PT (Ta = 25°C) 1.3 W
Total power dissipation PT (Tc = 25°C) 15 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
NPN SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
CE(sat)
2SD1692
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage VCEO(SUS) IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH 100 V
Collector cutoff current ICBO VCB = 100 V, IE = 0 10
Collector cutoff current ICEO VCE = 100 V, RBE = ∞ 1.0 mA
DC current gain hFE1** VCE = 2.0 V, IC = 1.5 A 2,000 20,000
DC current gain hFE2** VCE = 2.0 V, IC = 3.0 A 1,000
Collector saturation voltage VCE(sat)** IC = 1.5 A, IB = 1.5 mA 0.9 1.2 V
Base saturation voltage VBE(sat)** IC = 1.5 A, IB = 1.5 mA 1.5 2.0 V
Turn-on time ton 0.5
Storage time tstg 2.0
Fall time tf
C = 1.5 A
I
B1 = −IB2 = 1.5 mA
I
L = 27 Ω, VCC ≅ 40 V
R
1.0
µ
A
µ
s
µ
s
µ
s
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking M L K
hFE1 2,000 to 5,000 4,000 to 12,000 8,000 to 20,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16191EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
2002
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TYPICAL CHARACTERISTICS (Ta = 25°C)
(
)
(W)
T
With infinite heatsink
Total Power Dissipation P
Without heatsink
2SD1692
Derating dT (%)
C
I
Temperature T (°C)
C/W)
°
(
th
A
C
R
∆
Ambient Temperature Ta (°C)
Collector Current I
Transient Thermal Resistance
Pulse Width PW (s)
Collector to Emitter Voltage VCE (V)
(A)
C
FE
Collector Current I
Collector to Emitter Voltage VCE (V)
DC Current Gain h
Collector Current IC (A)
2
Data Sheet D16191EJ1V1DS
Page 3
2SD1692
(V)
(V)
CE(sat)
BE(sat)
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)
Base current
waveform
Collector current
waveform
Data Sheet D16191EJ1V1DS
3
Page 4
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2SD1692
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M8 E 02 . 11-1
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