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DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid
Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low V
CE (sat) VCE(sat) = 0.15 V
• Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
2SD1615 2SD1615A
PACKAGE DIMENSIONS
in millimeters
4.5 ± 0.1
1.6 ± 0.2
Collector to Base Voltage VCBO 60 120 V
Collector to Emitter Voltage V
Emitter to Base Voltage VEBO 6V
Collector Current (DC) I
Collector Current (Pulse)
∗
Maximum Power Dissipation
Total Power Dissipation
at 25°C Ambient Temperature
∗∗
CEO 50 60 V
C 1A
IC 2A
0.42
± 0.06
0.8 MIN.
PT 2.0 W
C
EB
0.47
1.5
± 0.06
3.0
Maximum Temperatures
Junction Temperature T
Storage Temperature Range T
∗
PW ≤ 10 ms, Duty Cycle ≤ 50%
∗∗
When mounted on ceramic substrate of 16 cm2 × 0.7 mm
j 150 °C
stg –55 to +150 °C
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 100 nA 2SD1615 VCB = 60 V, IE = 0
100 nA 2SD1615A VCB = 120 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 6.0 V, IC = 0
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage
Base Saturation Voltage VBE(sat)
Base to Emitter Voltage VBE
Gain Bandwidth Product fT 80 160 MHz VCE = 2.0 V, IE = –100 mA
Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz
∗∗∗
Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
∗∗∗
∗∗∗
VCE(sat)
∗∗∗
135 290 600 2SC1615 VCE = 2.0 V, IC = 100 mA
135 400 2SD1615A
81 270 VCE = 2.0 V, IC = 1.0 A
∗∗∗
∗∗∗
0.15 0.3 V IC = 1.0 A, IB = 50 mA
0.9 1.2 V IC = 1.0 A, IB = 50 mA
600 700 mV VCE = 2.0 V, IC = 50 mA
2.5 ± 0.1
0.42 ± 0.06
1.5 ± 0.1
4.0 ± 0.25
0.41
+ 0.03
– 0.05
hFE Classification
MARKING 2SD1615 GM GL GK
2SD1615A GQ GP
hFE 135 to 270 200 to 400 300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. D10198EJ4V0DS00 (4th edition)
Date Published December 2000 N CP(K)
Printed in Japan
©
1985
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2SD1615, 2SD1615A
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
2.5
2.0
1.5
1.0
– Total Power Dissipation – W
0.5
T
P
0 40 80 120 160 200
100
80
60
AMBIENT TEMPERA TURE
When mounted on ceramic substrate of 16 cm
2
× 0.7 mm
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
µ
300 A
µ
200 A
µ
200 A
µ
150 A
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
2
PW=1 ms
10 ms
1
200 ms
0.5
0.2
DC
0.1
– Collector Current – A
C
I
0.05
0.02
0.01
1 2 5 10 20 50 100
CE
– Collector to Emitter Voltage – V
V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLT AGE
1.0
0.8
5.0 mA
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
0.6
1.5 mA
1 pulse
2SD1615
2SD1615A
40
µ
100 A
– Collector Current – mA
C
20
I
= 50 A
B
I
µ
0246810
CE
– Collector to Emitter Voltage – V
V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE =
2.0 V
500
200
100
50
20
– DC Current Gain
EF
10
h
5
0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.01
IC – Collector Current – A
0.4
– Collector Current – A
C
0.2
I
1.0 mA
= 0.5 mA
B
I
0 0.2 0.4 0.6 0.8 1.0
CE(sat)
– Collector Saturation Voltage – V
V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2
1
V
BE(sat)
0.5
0.2
0.1
CE(sat)
V
– Collector Saturation Voltage – V
CE(sat)
V
0.05
– Base Saturation Voltage – V
0.02
BE(sat)
V
0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.01
IC – Collector Current – A
IC = 20·I
B
2
Data Sheet D10198EJ4V0DS00
Page 3
2SD1615, 2SD1615A
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
1000
500
Z
200
100
50
20
10
5
– Gain Bandwidth Product – MH
T
f
2
1
0.01 0.02 0.05
0.1 0.2 0.5 1 2 5 10
IC – Collector Current – A
SWITCHING TIME vs.
COLLECTOR CURRENT
2
1
µ
0.5
V
V
CC
= 10 V
C
= 10.I
BI
BE(off)
= –2 to 3 V
.
.
= –10.I
µ
I
V
PW = 2 s
Duty Cycle ≤ 2 %
t
stg
EC =
2.0 V
B2
OUTPUT CAPCITANCE vs.
COLLECTOR TO BASE VOLTAGE
100
50
IE = 0
f
=
1.0 MH
20
10
5
– Output Capacitance – pF
ob
C
2
1 2 5 10 20 50 100
VCB – Collector to Base Voltage – V
Z
0.2
0.1
t – Switching Time – s
0.05
0.01 0.02 0.05 0.1 0.2 0.5 1
I
C
– Collector Current – A
t
f
t
on
Data Sheet D10198EJ4V0DS00
3
Page 4
2SD1615, 2SD1615A
[MEMO]
•
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M8E 00. 4
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