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DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low V
CE (sat) VCE(sat) = 0.15 V
PACKAGE DIMENSIONS
in millimeters
• Complement to 2SB1115, 2SD1115A
4.5 ± 0.1
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25 ˚C)
2SD1615 2SD1615A
1.6 ± 0.2
Collector to Base Voltage VCBO 60 120 V
Collector to Emitter Voltage V
Emitter to Base Voltage VEBO 6A
Collector Current (DC) IC 1A
Collector Current (Pulse)* I
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** P
Maximum Temperatures
CEO 50 60 V
C 2A
T 2.0 W
0.42
± 0.06
0.8 MIN.
C
EB
0.42 ± 0.06
0.47
1.5
± 0.06
3.0
Junction Temperature Tj 150 ˚C
Storage Temperature Range T
stg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
** When mounted on ceramic substrate of 16 cm
2
× 0.7 mm
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 100 nA 2SD1615 VCB = 60 V, IE = 0
100 nA 2SD1615A VCB = 120 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 6.0 V, IC = 0
DC Current Gain hFE1*** 135 290 600 2SC1615 V CE = 2.0 V, IC = 100 mA
135 400 2SD1615A
DC Current Gain hFE2*** 81 270 VCE = 2.0 V, IC = 1.0 A
Collector Saturation Voltage
Base Saturation Voltage VBE(sat)*** 0.9 1.2 V IC = 1.0 A, IB = 50 mA
Base to Emitter Voltage VBE*** 600 700 mV VCE = 2.0 V, IC = 50 mA
Gain Bandwidth Product fT 80 160 MHz VCE = 2.0 V, IE = –100 mA
Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz
VCE(sat)*** 0.15 0.3 V IC = 1.0 A, IB = 50 mA
2.5 ± 0.1
1.5 ± 0.1
4.0 ± 0.25
0.41
+ 0.03
– 0.05
*** Pulsed: PW ≤ 350
h
FE Classification
MARKING 2SD1615 GM GL GK
2SD1615A GQ GP
hFE 135 to 270 200 to 400 300 to 600
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
µ
s, Duty Cycle ≤ 2 %
©
1985
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
2SD1615, 2SD1615A
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
1 pulse
2.0
When mounted on ceramic substrate of 16 cm
1.5
1.0
– Total Power Dissipation – W
0.5
T
P
without heatsink
2
× 0.7 mm
0 40 80 120 160 200
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
µ
300 A
µ
200 A
80
µ
200 A
60
µ
150 A
2
PW=1 ms
10 ms
1
200 ms
0.5
0.2
DC
0.1
– Collector Current – A
C
I
0.05
0.02
0.01
1 2 5 10 20 50 100
V
CE
– Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
0.8
5.0 mA
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
0.6
1.5 mA
2SD1615
2SD1615A
40
– Collector Current – mA
C
20
I
I
100 A
= 50 A
B
µ
µ
0246810
V
CE
– Collector to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE =
500
2.0 V
200
100
50
20
– DC Current Gain
EF
10
h
5
0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.01
IC – Collector Current – A
0.4
– Collector Current – A
C
0.2
I
1.0 mA
= 0.5 mA
B
I
0 0.2 0.4 0.6 0.8 1.0
V
CE(sat)
– Collector Saturation Voltage – V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2
1
V
BE(sat)
0.5
0.2
0.1
0.05
– Collector Saturation Voltage – V
– Base Saturation Voltage – V
0.02
CE(sat)
BE(sat)
V
V
0.01
0.02 0.05 0.1 0.2 0.5 1 2 5 10
V
CE(sat)
IC – Collector Current – A
IC = 20·I
B
2
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2SD1615, 2SD1615A
1000
500
200
100
50
20
10
5
fT – Gain Bandwidth Product – MHZ
2
1
0.01 0.02 0.05
2
1
µ
0.5
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
VEC = 2.0 V
0.1 0.2 0.5 1 2 5 10
IC – Collector Current – A
SWITCHING TIME vs.
COLLECTOR CURRENT
VCC = 10 V
.
C = 10
IBI = –10.IB2
I
VBE(off) = –2 to 3 V
.
µ
PW = 2 s
.
Duty Cycle ≤ 2 %
tstg
OUTPUT CAPCITANCE vs.
100
50
20
10
5
Cob – Output Capacitance – pF
2
1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE
IE = 0
f
= 1.0 MHZ
VCB – Collector to Base Voltage – V
0.2
t – Switching Time – s
0.1
0.05
0.01 0.02 0.05 0.1 0.2 0.5 1
I
C – Collector Current – A
tf
ton
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
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2SD1615, 2SD1615A
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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