Page 1
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Ideal for low noise, high-gain amplification
NF = 0.9 dB TYP. @ V
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
• SiGe technology (f
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number Quantity Supplying Form
CE = 2 V, IC = 5 mA, f = 2 GHz
CE = 2 V, IC = 20 mA, f = 2 GHz
T = 60 GHz, fmax = 60 GHz)
2SC5843
2SC5843 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5843-T3 10 kpcs/reel • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 8.0 V
Collector to Emitter Voltage VCEO 2.3 V
Emitter to Base Voltage VEBO 1.2 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Note
80 mW
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10353EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2003
Page 2
2SC5843
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA
DC Current Gain hFE
RF Characteristics
Insertion Power Gain S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz 16.0 18.0
Noise Figure NF
Reverse Transfer Capacitance Cre
Maximum Stable Power Gain MSG
Note 1
VCE = 2 V, IC = 5 mA 200
CE = 2 V, IC = 5 mA, f = 2 GHz,
V
Z
S = Zopt
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz 18.0 20.0
− −
− −
−
−
0.9 1.1 dB
0.17 0.22 pF
−
µ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S
3. MSG =
21
S
12
hFE CLASSIFICATION
Rank FB
200 nA
200 nA
400
−
−
−
dB
dB
Marking zD
hFE Value 200 to 400
2
Data Sheet PU10353EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
250
200
(mW)
tot
150
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
(pF)
re
0.2
2SC5843
f = 1 MHz
100
80
50
Total Power Dissipation P
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
0.60.50.4 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
0.1
Reverse Transfer Capacitance C
0
Collector to Base Voltage VCB (V)
486210
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
0.60.50.4 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
190 A
35
30
(mA)
C
25
20
15
10
Collector Current I
5
0123
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
µ
160 A
µ
130 A
µ
100 A
µ
70 A
µ
40 A
µ
IB = 10 A
µ
Data Sheet PU10353EJ02V0DS
3
Page 4
2SC5843
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
DC Current Gain hFE
10
10.1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
VCE = 1 V
1 000
100
DC Current Gain hFE
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10.1 10 100
Collector Current IC (mA)
VCE = 2 V
4
Data Sheet PU10353EJ02V0DS
Page 5
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm)
1.0±0.05
+0.07
0.8
–0.05
2SC5843
–0.05
+0.07
1.2
0.8
0.40.4
0.5±0.05
123
zD
654
0.15±0.05
–0.05
+0.1
0.125
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
Data Sheet PU10353EJ02V0DS
5
Page 6
2SC5843
•
The information in this document is current as of September, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
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•
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•
Descriptions of circuits, software and other related information in this document are provided for illustrative
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
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M8E 00. 4 - 0110
6
Data Sheet PU10353EJ02V0DS
Page 7
2SC5843
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
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