Page 1
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NPN SiGe RF TRANSISTOR FOR
LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low noise ⋅ high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
• SiGe technology (f
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
= 60 GHz, f
T
= 60 GHz)
max
= 2 V, IC = 20 mA, f = 2 GHz
CE
2SC5761
Part Number Quantity Supplying Form
2SC5761 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5761-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
2
Note Mounted on 1.08 cm
× 1.0 mm (t) glass epoxy substrate
tot
CBO
CEO
EBO
C
Note
j
stg
8.0 V
2.3 V
1.2 V
35 mA
80 mW
150
65 to +150
−
C
°
C
°
THERMAL RESISTANCE
Parameter Symbol Value Unit
C/W
Junction to Case Resistance R
th (j-c)
150
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark ! shows major revised points.
°
NEC Compound Semiconductor Devices 2001, 2003
Page 2
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain h
FE
RF Characteristics
S
Insertion Power Gain
Noise Figure NF
Reverse Transfer Capacitance C
Maximum Stable Power Gain MSG
Gain 1 dB Compression Output Power P
3rd Order Intermodulation Distortion
Output Intercept Point
OIP
VCB = 5 V, IE = 0 mA
CBO
VBE = 0.5 V, IC = 0 mA
EBO
Note 1
VCE = 2 V, IC = 5 mA 200
2
21e
VCE = 2 V, IC = 20 mA, f = 2 GHz 16.0 18.0
= 2 V, IC = 5 mA, f = 2 GHz,
V
CE
Z
= Z
S
opt
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
re
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz 18.0 20.0
O (1 dB)VCE
= 2 V, IC = 20 mA, f = 2 GHz
= 2 V, IC = 20 mA, f = 2 GHz
3VCE
−−
−−
−
−
−
−
−
0.9 1.1 dB
0.17 0.22 pF
12.0
22.0
2SC5761
200 nA
200 nA
400
−
−
−
−
dB
dB
dBm
dBm
−
Notes 1. Pulse measurement: PW ≤ 350
2. Collector to base capacitance when the emitter grounded
S
3. MSG =
21
S
12
hFE CLASSIFICATION
Rank FB
Marking T16
hFE Value 200 to 400
s, Duty Cycle ≤ 2%
µ
2
Data Sheet PU10212EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
2SC5761
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
(mW)
tot
200
150
100
80
50
Total Power Dissipation P
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
0.40.20.0 0.6 0.8 1.0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.4
(pF)
re
0.3
0.2
0.1
Reverse Transfer Capacitance C
02 68410
Collector to Base Voltage VCB (V)
f = 1 MHz
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
µ
35
30
(mA)
C
25
20
15
10
Collector Current I
5
0123
Collector to Emitter Voltage VCE (V)
190 A
µ
160 A
µ
130 A
µ
100 A
µ
70 A
µ
40 A
µ
IB = 10 A
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 1 V
10.1 10 100
Collector Current IC (mA)
1 000
FE
100
DC Current Gain h
Data Sheet PU10212EJ02V0DS
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
10.1 10 100
Collector Current IC (mA)
3
Page 4
2SC5761
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
VCE = 1 V
f = 2 GHz
35
(GHz)
T
30
25
20
15
10
5
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101 100
Collector Current IC (mA)
MSG
VCE = 0.5 V
C
= 20 mA
I
MAG
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
VCE = 2 V
f = 2 GHz
35
(GHz)
T
30
25
20
15
10
5
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101 100
Collector Current IC (mA)
MSG
VCE = 1 V
C
= 20 mA
I
MAG
15
|S
10
5
Insertion Power Gain |S
0.1 1 10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
15
10
5
Insertion Power Gain |S
0.1 1 10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
MSG
|S
21e
21e
2
|
2
|
VCE = 2 V
C
= 20 mA
I
MAG
15
|S
21e
10
5
Insertion Power Gain |S
0.1 1 10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
2
|
4
Data Sheet PU10212EJ02V0DS
Page 5
2SC5761
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
(dB)
2
|
21e
20
|S
15
10
5
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
101 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 5 GHz
25
(dB)
20
2
|
21e
15
10
5
|S
MSG
21e
MAG
21e
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
(dB)
2
|
2
|
20
21e
15
10
5
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
Collector Current IC (mA)
2
|
MSG
2
|S
21e
|
101 100
0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
101 100
Collector Current IC (mA)
Data Sheet PU10212EJ02V0DS
5
Page 6
2SC5761
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V, f = 1 GHz
cq
= 5 mA (RF OFF)
I
20
15
P
(dBm)
10
out
out
5
0
–5
Output Power P
–10
–15
–20 –15 –10 0–5
Input Power P
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V, f = 3 GHz
cq
= 5 mA (RF OFF)
I
20
15
(dBm)
10
out
5
P
out
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
80
70
60
(mA)
C
50
40
30
I
C
20
Collector Current I
10
0
25
VCE = 2 V, f = 2 GHz
cq
= 5 mA (RF OFF)
I
20
15
(dBm)
10
out
P
out
5
0
–5
Output Power P
–10
–15
–20 –15 –10 0–5
Input Power P
in
(dBm)
I
C
80
70
60
(mA)
C
50
40
80
70
60
(mA)
C
50
40
30
20
Collector Current I
10
0
0
–5
Output Power P
–10
I
–15
–20 –15 –10 0–5
C
Input Power P
in
(dBm)
30
20
Collector Current I
10
0
6
Data Sheet PU10212EJ02V0DS
Page 7
2SC5761
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
(dBc)
3
60
50
40
30
20
10
0
–5 20151050
3rd Order Intermodulation Distortion IM
Output Power (at 1 tone) P
VCE = 2 V
Icq = 5 mA
f = 1 GHz
off set = 1 MHz
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
(dBc)
3
60
50
VCE = 2 V
Icq = 5 mA
f = 3 GHz
off set = 1 MHz
out
(dBm)
3RD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
70
(dBc)
3
60
50
40
30
20
10
0
–5 20151050
3rd Order Intermodulation Distortion IM
Output Power (at 1 tone) P
VCE = 2 V
Icq = 5 mA
f = 2 GHz
off set = 1 MHz
out
(dBm)
40
30
20
10
0
–5 20151050
3rd Order Intermodulation Distortion IM
Output Power (at 1 tone) P
out
(dBm)
Data Sheet PU10212EJ02V0DS
7
Page 8
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 1.5 GHz
4
3
G
a
VCE = 1 V
f = 1 GHz
25
20
(dB)
a
15
10
Associated Gain G
5
0
25
20
(dB)
a
15
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
G
a
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 1.5 GHz
4
3
a
G
VCE = 2 V
f = 1 GHz
25
20
(dB)
a
15
10
Associated Gain G
5
0
25
20
(dB)
a
15
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 2 GHz
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
10
Associated Gain G
5
0
25
20
(dB)
a
15
10
Associated Gain G
5
0
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 2 GHz
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
10
Associated Gain G
5
0
25
20
(dB)
a
15
10
Associated Gain G
5
0
8
Data Sheet PU10212EJ02V0DS
Page 9
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 2.5 GHz
4
G
a
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 3 GHz
4
G
3
a
25
20
(dB)
a
15
10
Associated Gain G
5
0
25
20
(dB)
a
15
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 2.5 GHz
4
G
a
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 3 GHz
4
a
3
G
25
20
(dB)
a
15
10
Associated Gain G
5
0
25
20
(dB)
a
15
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 4 GHz
4
3
G
a
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
10
Associated Gain G
5
0
25
20
(dB)
a
15
10
Associated Gain G
5
0
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 4 GHz
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
10
Associated Gain G
5
0
25
20
(dB)
a
15
10
Associated Gain G
5
0
Data Sheet PU10212EJ02V0DS
9
Page 10
2SC5761
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 1 V
f = 5 GHz
4
3
a
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
C
(mA)
25
20
(dB)
a
15
10
Associated Gain G
5
0
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
VCE = 2 V
f = 5 GHz
4
3
G
a
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
25
20
(dB)
a
15
10
Associated Gain G
5
0
10
Data Sheet PU10212EJ02V0DS
Page 11
EQUAL NF CIRCLE
VCE = 2 V
I
C
= 5 mA
f = 1 GHz
Unstable Area
1.0 dB
1.5 dB
NF
min
= 0.8 dB
2SC5761
Γ
opt
VCE = 2 V
I
C
= 5 mA
f = 2 GHz
4.0 dB
2.5 dB
3.5 dB
NF
2.0 dB
3.0 dB
min
= 0.85 dB
1.0 dB
Γ
opt
Unstable Area
2.0 dB
3.0 dB
4.0 dB
Data Sheet PU10212EJ02V0DS
1.5 dB
2.5 dB
3.5 dB
11
Page 12
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.05 ± 0.1
–0.05
+0.1
0.40
1.25 ± 0.1
–0.05
+0.1
0.30
T16
0.600.65
1.25
2.0 ± 0.1
2SC5761
0.650.65
1.30
12
–0.05
+0.1
0.30
0.59 ± 0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
43
–0.05
+0.1
0.30
–0.05
+0.1
0.11
12
Data Sheet PU10212EJ02V0DS
Page 13
2SC5761
•
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10212EJ02V0DS
13
Page 14
2SC5761
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
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