Part NumberQuantitySupplying Form
2SC574650 pcs (Non reel)• 8 mm wide embossed taping
2SC5746-T310 kpcs/reel• Pin 2 (Base) face the perforat i on side of the tape
2SC5746
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
ParameterSymbolRatingsUnit
Collector to Base VoltageV
Collector to Emitter VoltageV
Emitter to Base VoltageV
Collector CurrentI
Total Power Dissipation
Junction TemperatureT
Storage TemperatureT
2
Mounted on 1.08 cm
Note
× 1.0 mm (t) glass epoxy PCB
CBO
CEO
EBO
C
Note
tot
P
j
stg
−
15V
5.5V
1.5V
100mA
140mW
150
65 to +150
°
C
°
C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10007EJ02V0DS (2nd edition)
Date Published January 2002 CP(K)
Printed in Japan
The mark
••••
shows major revised points.
NEC Compound Semiconductor Devices 2001, 2002
Page 2
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
ParameterSymbolTest ConditionsMIN.TYP.MAX.Unit
DC Characteristics
Collector Cut-off CurrentI
Emitter Cut-off CurrentI
DC Current Gain
RF Characteristics
Gain Bandwidth Productf
Insertion Power Gain
Noise FigureNF
Reverse Transfer Capacitance
CBO
VCB = 5 V, IE = 0 mA––100nA
EBO
VEB = 1 V, IC = 0 mA––100nA
Note 1
FE
h
S
C
VCE = 1 V, IC = 10 mA100–145–
T
VCE = 1 V, IC = 10 mA, f = 2 GHz4.05.5–GHz
2
21e
VCE = 1 V, IC = 10 mA, f = 2 GHz3.04.5–dB
CE
= 1 V, IC = 10 mA, f = 2 GHz,
V
S
opt
Z
= Z
Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz0.650.750.85pF
2SC5746
–2.03.0dB
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
hFE CLASSIFICATION
RankFB
MarkingY5
hFE Value100 to 145
s, Duty Cycle ≤ 2%
µ
2
Data Sheet PU10007EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
2SC5746
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
(mW)
tot
200
150
140
100
50
Total Power Dissipation P
0
255075100125150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
(pF)
re
0.8
0.6
0.4
0.2
Reverse Transfer Capacitance C
0 246810
Collector to Base Voltage VCB (V)
f = 1 MHz
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.50.60.40.80.91.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
µ
70
60
(mA)
C
50
40
30
20
Collector Current I
10
0 1234567
500 A
µ
450 A
µ
400 A
µ
350 A
µ
300 A
µ
250 A
µ
200 A
150 A
100 A
IB = 50 A
Collector to Emitter Voltage VCE (V)
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.50.60.40.80.91.0
µ
µ
µ
Data Sheet PU10007EJ02V0DS
3
Page 4
2SC5746
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 1 V
10.110100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 2 V
10.110100
Collector Current IC (mA)
4
Data Sheet PU10007EJ02V0DS
Page 5
2SC5746
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101100
Collector Current IC (mA)
MSG
MAG
CE
= 1 V
V
IC = 10 mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101100
Collector Current IC (mA)
VCE = 2 V
IC = 10 mA
MSG
MAG
15
10
5
|S
21e
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0.1110
Frequency f (GHz)
15
10
2
|
Insertion Power Gain |S
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0.1110
2
|S
21e
|
Frequency f (GHz)
Data Sheet PU10007EJ02V0DS
5
Page 6
2SC5746
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
(dB)
2
|
21e
16
12
8
MAGMSG
|S
4
Insertion Power Gain |S
110100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
16
VCE = 1 V
f = 2 GHz
12
(dB)
2
|
8
21e
MAG
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 1 V
f = 1 GHz
2
|
20
(dB)
2
|
21e
16
12
MAGMSG
|S
8
4
Insertion Power Gain |S
110100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
21e
VCE = 2 V
f = 1 GHz
2
|
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
16
VCE = 2 V
f = 2 GHz
12
(dB)
2
|
21e
8
MAG
4
|S
21e
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
110100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
12
VCE = 1 V
f = 4 GHz
8
(dB)
2
|
4
21e
0
–4
–8
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
110100
Collector Current IC (mA)
MAG
|S
21e
2
|S
21e
2
|
4
|
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
110100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
12
VCE = 2 V
f = 4 GHz
8
(dB)
2
|
21e
4
0
2
|
–4
–8
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
110100
Collector Current IC (mA)
MAGMSG
2
|S
21e
|
6
Data Sheet PU10007EJ02V0DS
Page 7
2SC5746
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 1 GHz
G
a
6
4
2
Noise Figure NF (dB)
NF
0
110100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 1.5 GHz
6
G
a
16
12
(dB)
a
8
4
Associated Gain G
0
16
12
(dB)
a
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 2 V
f = 1 GHz
G
a
6
4
2
Noise Figure NF (dB)
NF
0
110100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 2 V
f = 1.5 GHz
6
G
a
16
12
(dB)
a
8
4
Associated Gain G
0
16
12
(dB)
a
4
2
Noise Figure NF (dB)
NF
0
110100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 2 GHz
6
G
NF
a
C
(mA)
4
2
Noise Figure NF (dB)
0
110100
Collector Current I
8
4
Associated Gain G
0
16
12
(dB)
a
8
4
Associated Gain G
0
4
2
Noise Figure NF (dB)
NF
0
110100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
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•
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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•
Descriptions of circuits, software and other related information in this document are provided for illustrative
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parties arising from the use of these circuits, software and information.
•
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