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PRELIMINARY DATA SHEET
NE685M23NPN SILICON TRANSISTOR
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 12 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
The NE685M23 transistor is designed for low noise, high gain,
and low cost requirements. This high f
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE685 is also
available in six different low cost plastic surface mount package styles.
T part is well suited for
OUTLINE DIMENSIONS
PACKAGE OUTLINE M23
1.0
0.6
0.55
0.15
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
(Units in mm)
0.5
1
2
BOTTOM VIEW
3
0.2
0.25
0.4
0.25
0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE685M23
EIAJ1 REGISTERED NUMBER 2SC5652
PACKAGE OUTLINE M23
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12
NF Noise Figure at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 1.5 2.5
2
|S21E|
2
hFE
ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1
3
CRE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 7 10
Forward Current Gain at VCE = 3 V, IC = 10 mA 75 145
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7
California Eastern Laboratories
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NE685M23
G
A
NF
V
CE
= 3 V
f = 2 GHz
10
20
16
12
8
4
0
100
101
0
2
4
6
8
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
CBO Collector to Base Voltage V 9
V
V
CEO Collector to Emitter Voltage V 5
VEBO Emitter to Base Voltage V 2
IC Collector Current mA 30
PT Total Power Dissipation mW TBD
J Junction Temperature °C 150
T
TSTG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
(mA)
C
50
40
30
20
IB 40 µA step
400 µA
200 µA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
60
VCE = 3 V
50
(mA)
40
C
30
20
Collector Current, I
10
0
Base to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
FE
100
10.80.60.40.20
VCE = 3 V
10
Collector Current, I
IB = 40 µA
0
86420
Collector to Emitter Voltage, VCE (V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
14
12
(GHz)
T
10
8
6
4
2
Gain Bandwidth Product, f
0
Collector Current, IC (mA)
VCE = 3 V
f = 2 GHz
100101
DC Current Gain, h
10
Collector Current, IC (mA)
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
Noise Figure, NF (dB)
Collector Current, I
C (mA)
1001010.10.001
(dB)
A
Associated Gain, G
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
02/10/2000
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