Page 1
PRELIMINARY DATA SHEET
0.15
0.2
0.15
2
1
0.25
0.25
0.4
0.5
1.0
0.55
0.6
BOTTOM VIEW
3
NE688M23NPN SILICON TRANSISTOR
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
I
C MAX = 100 mA
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
OUTLINE DIMENSIONS
PACKAGE OUTLINE M03
(Units in mm)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE688M23
EIAJ1 REGISTERED NUMBER 2SC5651
PACKAGE OUTLINE M23
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz 4 5
NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.9 2.5
2
|S21E|
2
hFE
ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1
3
CRE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 3 4
Forward Current Gain at VCE = 1 V, IC = 3 mA 80 145
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.7 0.8
California Eastern Laboratories
Page 2
NE688M23
VCE = 2 V
1000
1001010.10.01
10
100
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
CBO Collector to Base Voltage V 9
V
V
CEO Collector to Emitter Voltage V 6
EBO Emitter to Base Voltage V 2
V
I
C Collector Current mA 100
PT Total Power Dissipation mW TBD
TJ Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
80
(mA)
C
60
IB 50 µA step
450 µA
350 µA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
120
100
(mA)
C
Collector Current, I
VCE = 2 V
80
60
40
20
0
Base to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
FE
10.80.60.40.20
40
Collector Current, I
20
0
Collector to Emitter Voltage, VCE (V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
8
VCE= 3 V
f = 2 GHz
7
(GHz)
T
6
5
4
3
2
Gain Bandwidth Product, f
1
0
Collector Current, IC (mA)
250 µA
150 µA
IB = 50 µA
DC Current Gain, h
86420
Collector Current, IC (mA)
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
10
CE
= 3 V
V
f = 1 GHz
8
6
4
Noise Figure, NF (dB)
2
0
100101
G
NF
A
10
8
(dB)
A
6
4
2
Associated Gain, G
0
100101
Collector Current, IC (mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
02/10/2000
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