• NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part NumberQuantitySupplying Form
2SC561850 pcs (Non reel)• 8 mm wide embossed taping
2SC5618-T310 kpcs/reel• Pin 2 (Base) face the perforat i on side of the tape
2SC5618
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
ParameterSymbolRatingsUnit
Collector to Base VoltageV
Collector to Emitter VoltageV
Emitter to Base VoltageV
Collector CurrentI
Total Power Dissipation
Junction TemperatureT
Storage TemperatureT
2
Mounted on 1.08 cm
Note
× 1.0 mm (t) glass epoxy PCB
CBO
CEO
EBO
C
Note
tot
P
j
stg
−
5.0V
3.0V
2.0V
30mA
90mW
150
65 to +150
°
C
°
C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15644EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
2001
Page 2
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
ParameterSymbolTest ConditionsMIN.TYP.MAX.Unit
DC Characteristics
Collector Cut-off CurrentI
Emitter Cut-off CurrentI
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)f
Gain Bandwidth Product (2)f
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)NF
Noise Figure (2)NF
Reverse Transfer Capacitance
CBO
VCB = 5 V, IE = 0 mA––100nA
EBO
VBE = 1 V, IC = 0 mA––100nA
Note 1
FE
h
S
S
C
VCE = 2 V, IC = 20 mA70–130–
T
VCE = 2 V, IC = 20 mA, f = 2 GHz9.014.0–GHz
T
VCE = 1 V, IC = 10 mA, f = 2 GHz7.012.0–GHz
2
21e
VCE = 2 V, IC = 20 mA, f = 2 GHz8.510.0–dB
2
21e
VCE = 1 V, IC = 10 mA, f = 2 GHz6.09.0–dB
CE
= 2 V, IC = 3 mA, f = 2 GHz,
V
S
opt
Z
= Z
CE
= 1 V, IC = 3 mA, f = 2 GHz,
V
S
opt
Z
= Z
Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz–0.40.8pF
2SC5618
–1.42.0dB
–1.52.0dB
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
hFE CLASSIFICATION
RankEBFB
MarkingW1W2
hFE Value70 to 10090 to 130
s, Duty Cycle ≤ 2%
µ
2
Data Sheet P15644EJ1V0DS
Page 3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
2SC5618
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
(mW)
tot
200
150
100
90
50
Total Power Dissipation P
0
255075100125150
Mounted on Glass Epoxy PCB
(1.08 cm
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
VCE = 1 V
25
(mA)
C
20
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
(pF)
re
0.5
0.4
0.3
0.2
0.1
Reverse Transfer Capacitance C
012345
Collector to Base Voltage VCB (V)
f = 1 MHz
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
VCE = 2 V
25
(mA)
C
20
15
10
Collector Current I
5
00.40.20.60.81.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
µ
µ
500 A
30
25
(mA)
C
20
15
10
Collector Current I
5
01234
Collector to Emitter Voltage VCE (V)
µ
400 A
IB : 50 A step
µ
300 A
µ
200 A
µ
100 A
IB = 50 A
µ
15
10
Collector Current I
5
00.40.20.60.81.0
Base to Emitter Voltage VBE (V)
Data Sheet P15644EJ1V0DS
3
Page 4
2SC5618
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 1 V
1100.1100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 2 V
1100.1100
Collector Current IC (mA)
4
Data Sheet P15644EJ1V0DS
Page 5
2SC5618
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
VCE = 1 V
f = 2 GHz
14
(GHz)
T
12
10
8
6
4
2
Gain Bandwidth Product f
0
101100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
(dB)
2
|
21e
35
30
25
VCE = 1 V
I
C
= 10 mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
VCE = 2 V
f = 2 GHz
14
(GHz)
T
12
10
8
6
4
2
Gain Bandwidth Product f
0
101100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
(dB)
2
|
21e
35
30
25
VCE = 2 V
I
C
= 10 mA
20
15
10
5
Insertion Power Gain |S
0
0.1110
Frequency f (GHz)
INSERTION POWER GAIN vs. FREQUENCY
35
30
(dB)
2
|
21e
25
20
15
10
5
Insertion Power Gain |S
0
0.1110
Frequency f (GHz)
VCE = 1 V
I
C
= 20 mA
20
15
10
5
Insertion Power Gain |S
0
0.1110
Frequency f (GHz)
INSERTION POWER GAIN vs. FREQUENCY
35
30
(dB)
2
|
21e
25
20
15
10
5
Insertion Power Gain |S
0
0.1110
Frequency f (GHz)
VCE = 2 V
I
C
= 20 mA
Data Sheet P15644EJ1V0DS
5
Page 6
2SC5618
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15
(dB)
2
|
21e
|S
10
5
VCE = 1 V
f = 1 GHz
Insertion Power Gain |S
110100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 2 GHz
15
(dB)
2
|
21e
10
MSG
MAG
|S
21e
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
MAGMSG
20
2
|
(dB)
2
|
21e
15
10
5
VCE = 2 V
f = 1 GHz
Insertion Power Gain |S
110100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
MAGMSG
2
|S
21e
|
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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