Page 1
PRELIMINARY DATA SHEET
NE688M13NPN SILICON TRANSISTOR
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
I
C MAX = 100 mA
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
OUTLINE DIMENSIONS
PACKAGE OUTLINE M13
+0.1
0.5
–0.05
2
+0.1
1.0
–0.05
0.1
0.5±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
X X
0.125
0.1
+0.1
–0.05
0.7
0.15
3
1
(Units in mm)
+0.1
0.15
–0.05
1
0.35
0.35
2
+0.1
–0.05
0.3
0.2
Bottom View
+0.1
3
0.2
–0.05
0.2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE688M13
EIAJ1 REGISTERED NUMBER 2SC5616
PACKAGE OUTLINE M13
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz 4 5
NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.9 2.5
2
|S21E|
2
hFE
ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1
3
CRE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.5
VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.7
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 3 4
VCE = 3 V, IC = 20 mA, f = 2 GHz dB 8
Forward Current Gain at VCE = 1 V, IC = 3 mA 80 145
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.7 0.8
California Eastern Laboratories
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NE688M13
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
CBO Collector to Base Voltage V 9
V
VCEO Collector to Emitter Voltage V 6
V
EBO Emitter to Base Voltage V 2
IC Collector Current mA 100
2
PT
T
Total Power Dissipation mW 140
J Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
25
(mA)
20
C
15
10
Collector Current, I
5
0
0 2.5
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
I
B
5
= 20 µA
7
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 1 V
FE
100
DC Current Gain, h
0
0.2
0.1
0.5
2510
1
20
100
50
Collector to Emmiter Voltage, VCE (V)
Collector Current, IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
50
20
10
(mA)
5
C
2
1
0.5
0.2
0.1
Collector Current, I
0.05
0.02
0.01
0 0.5
1
Base to Emmiter Voltage, VBE (V)
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
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