Page 1
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., G
• Maximum available power gain: MAG = 14 dB TYP. @ V
• f
T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Quantity Supplying Form
a = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
CE = 2 V, IC = 50 mA, f = 2 GHz
2SC5509 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5509-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150
Storage Temperature Tstg
Note Free Air
Note
190 mW
°C
−65 to +150 °C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10009EJ02V0DS (2nd edition)
Date Published September 2004 CP(K)
Printed in Japan
The mark shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 2001, 2004
Page 2
2SC5509
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Note 5
, f = 2 GHz
Note 5
, f = 2 GHz
°C/W
°C/W
− −
− −
600 nA
600 nA
−
−
GHz
−
dB
– 1.2 1.7 dB
−
−
−
−
−
0.5 0.75 pF
14
15
17
27
−
−
−
−
dB
dB
dBm
dBm
Junction to Case Resistance Rth j-c 95
Junction to Ambient Resistance Rth j-a 650
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 90 mA, f = 2 GHz 13 15
Insertion Power Gain
Noise Figure NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
Reverse Transfer Capacitance Cre
Maximum Available Power Gain MAG
Maximum Stable Power Gain MSG
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 70 mA
3rd Order Intermodulation Distortion
Output Intercept Point
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
Note 1
VCE = 2 V, IC = 10 mA 50 70 100
2
S
21e
CE = 2 V, IC = 50 mA, f = 2 GHz 8 11
V
S = Zopt
Z
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
Note 3
VCE = 2 V, IC = 50 mA, f = 2 GHz
Note 4
VCE = 2 V, IC = 50 mA, f = 2 GHz
OIP3 VCE = 2 V, IC = 70 mA
3. MAG =
4. MSG =
S21
S
12
S21
S
12
(K – √ (K
5. Collector current when P
hFE CLASSIFICATION
Rank FB
Marking T80
hFE Value 50 to 100
2
2
– 1) )
O (1 dB) is output
Data Sheet PU10009EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
400
350
330
(mW)
tot
300
Mounted on
ceramic substrate
250
(15 × 15 mm, t = 0.6 mm)
200
190
150
100
50
Total Power Dissipation P
Free Air
When case temperature
is specified
(mA)
C
Collector Current I
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
2SC5509
25 50 75 100 125 150
0
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
(mA)
C
100
50
Collector Current I
= 1 100 A
B
I
1 000 A
900 A
800 A
700 A
600 A
500 A
400 A
300 A
200 A
100 A
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
021435
Collector to Emitter Voltage VCE (V)
Capacitance/f
T Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
(pF)
re
0.80
0.60
0.40
f = 1 MHz
0
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
150
FE
100
DC Current Gain h
50
0
0.01 0.10.001 1 10 100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
(GHz)
T
20
15
10
0.40.2 0.6 0.8 1.0 1.2
VCE = 2 V
Collector Current IC (mA)
0.20
Reverse Transfer Capacitance C
0 1.0 3.0 4.02.0 5.0
Collector to Base Voltage VCB (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10009EJ02V0DS
5
Gain Bandwidth Product f
0
10 1001 1 000
Collector Current IC (mA)
3
Page 4
Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
VCE = 2 V
IC = 50 mA
2SC5509
(dB)
2
|
21e
30
25
MSG
20
15
10
|S
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0.1 1.0 10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
(dB)
20
2
|
21e
15
10
5
|S
21e
21e
MAG
2
|
2
|
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
(dB)
2
|
21e
25
20
15
10
MAGMSG
2
|S
21e
|
5
MAGMSG
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
C
Collector Current I
(mA)
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 1 GHz
20
15
(dBm)
out
10
5
Output Power P
0
–5
–15 0–5–10 5 10 15
Input Power P
Remark The graphs indicate nominal characteristics.
in
(dBm)
P
out
I
C
150
125
(mA)
C
100
75
50
Collector Current I
25
0
Insertion Power Gain |S
1 10 100
C
Collector Current I
(mA)
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
VCE = 2 V
f = 2 GHz
20
P
15
(dBm)
out
10
5
Output Power P
0
–5
–15 0–5–10 5 10 15
Input Power P
out
I
C
in
(dBm)
150
125
(mA)
C
100
75
50
Collector Current I
25
0
4
Data Sheet PU10009EJ02V0DS
Page 5
Noise Characteristics
2SC5509
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 1 GHz
5.0
4.0
3.0
2.0
Noise Figure NF (dB)
1.0
0.0
1 10 100
Collector Current I
G
NF
a
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 2 GHz
5.0
4.0
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 1.5 GHz
5.0
4.0
G
a
3.0
2.0
Noise Figure NF (dB)
1.0
0.0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 2.5 GHz
5.0
4.0
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
G
NF
a
C
(mA)
3.0
2.0
Noise Figure NF (dB)
1.0
0.0
1 10 100
Collector Current I
15
10
Associated Gain G
5
0
3.0
2.0
Noise Figure NF (dB)
1.0
0.0
1 10 100
Collector Current I
G
NF
a
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
15
10
Associated Gain G
5
0
Data Sheet PU10009EJ02V0DS
5
Page 6
EQUAL NF CIRCLE
VCE = 2 V
I
C = 10 mA
f = 1 GHz
2SC5509
Unstable Area
VCE = 2 V
I
C = 10 mA
f = 2 GHz
NF
min
= 0.95 dB
Γ
1.5 dB
2.0 dB
opt
2.5 dB
3.0 dB
3.5 dB
4.0 dB
6
NF
min
= 1.1 dB
Γ
opt
1.5 dB
2.0 dB
2.5 dB
3.0 dB
Data Sheet PU10009EJ02V0DS
3.5 dB
4.0 dB
Page 7
2SC5509
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 20 mA
Γ
f NFmin Ga
opt
Rn/50 f NF
min Ga
(GHz) (dB) (dB) MAG. ANG. (GHz) (dB) (dB) MAG. ANG.
0.8 0.70 18.0 0.17 93.0 0.11 0.8 1.12 20.7 0.30
0.9 0.74 17.0 0.18 103.0 0.11 0.9 1.15 19.7 0.31
1.0 0.78 16.2 0.20 112.7 0.11 1.0 1.18 18.8 0.32
1.5 0.98 13.6 0.32 155.4 0.09 1.5 1.31 15.7 0.39
1.8 1.10 12.5 0.40 176.2 0.07 1.8 1.38 14.4 0.45
1.9 1.14 12.2 0.43
2.0 1.18 11.8 0.46
2.5 1.39 9.9 0.56
−177.8
−172.2
−151.8
0.06 1.9 1.41 14.0 0.47
0.06 2.0 1.43 13.6 0.49
0.08 2.5 1.56 11.5 0.56
V
CE = 2 V, IC = 10 mA VCE = 2 V, IC = 50 mA
Γ
f NFmin Ga
opt
Rn/50 f NF
min Ga
(GHz) (dB) (dB) MAG. ANG. (GHz) (dB) (dB) MAG. ANG.
0.8 0.87 19.6 0.13 170.3 0.09 0.8 1.75 21.3 0.49
0.9 0.90 18.6 0.15 171.5 0.09 0.9 1.78 20.3 0.49
1.0 0.93 17.8 0.17 173.0 0.09 1.0 1.80 19.4 0.50
1.5 1.07 14.8 0.30
1.8 1.15 13.6 0.39
1.9 1.18 13.2 0.41
2.0 1.20 12.8 0.44
2.5 1.35 10.9 0.53
−174.1
−164.1
−160.6
−157.2
−142.3
0.08 1.5 1.92 16.2 0.55
0.07 1.8 2.00 14.8 0.59
0.07 1.9 2.02 14.4 0.60
0.07 2.0 2.04 13.9 0.61
0.10 2.5 2.17 11.8 0.65
Γ
opt
Γ
opt
−164.8
−162.7
−160.7
−151.5
−146.3
−144.6
−142.9
−133.5
−159.4
−157.2
−154.9
−144.7
−139.1
−137.3
−135.5
−126.4
Rn/50
0.08
0.09
0.09
0.10
0.10
0.10
0.11
0.14
Rn/50
0.10
0.10
0.11
0.14
0.17
0.19
0.20
0.28
Data Sheet PU10009EJ02V0DS
7
Page 8
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
2.05±0.1
+0.1
0.40
–0.05
1.25±0.1
–0.05
+0.1
0.30
T80
0.650.65
1.30
1.25
2.0±0.1
0.600.65
2SC5509
+0.1
0.30
12
–0.05
43
–0.05
+0.1
0.30
–0.05
+0.1
0.11
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
8
Data Sheet PU10009EJ02V0DS
Page 9
2SC5509
•
The information in this document is current as of September, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10009EJ02V0DS
9
Page 10
2SC5509
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
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TEL: +49-211-6503-0 FAX: +49-211-6503-1327
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0406
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