Page 1
DATA SHEET
NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., G
• Maximum available power gain: MAG = 19 dB TYP. @ V
• f
T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Quantity Supplying Form
a = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
CE = 2 V, IC = 20 mA, f = 2 GHz
2SC5508
2SC5508 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5508-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
Note Free air
Symbol
Note
115 mW
Ratings Unit
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10521EJ01V0DS (1st edition)
(Previous No. P13865EJ1V0DS00)
Date Published September 2004 CP(K)
Printed in Japan
The mark shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1999, 2004
Page 2
2SC5508
THERMAL RESISTANCE
Parameter
Symbol
Junction to Case Resistance Rth j-c 150 °C/W
Junction to Ambient Resistance Rth j-a 650 °C/W
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 200 nA
Emitter Cut-off Current
DC Current Gain hFE
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 30 mA, f = 2 GHz 20 25 – GHz
Insertion Power Gain
Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz,
Reverse Transfer Capacitance Cre
Maximum Available Power Gain MAG
Maximum Stable Power Gain MSG
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 20 mA
3rd Order Intermodulation Distortion
Output Intercept Point
IEBO VEB = 1 V, IC = 0 mA – – 200 nA
Note 1
VCE = 2 V, IC = 5 mA 50 70 100 –
2
|S
21e|
V
Z
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.18 0.24 pF
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz – 19 – dB
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz – 20 – dB
OIP3 VCE = 2 V, IC = 20 mA
Ratings Unit
CE = 2 V, IC = 20 mA, f = 2 GHz 14 17 – dB
– 1.1 1.5 dB
S = Zopt
Note 5
, f = 2 GHz – 11 – dBm
Note 5
, f = 2 GHz – 22 – dBm
µ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when P
S21
(K – √ (K2 – 1) )
S
12
S21
S
12
O (1 dB) is output
hFE CLASSIFICATION
Rank FB
Marking T79
hFE Value 50 to 100
2
Data Sheet PU10521EJ01V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
250
200
150
Ptot-TA: Free air
Ptot-TA:
Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
P
tot-TC
: When case temperature
is specified
C (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
2SC5508
100
50
Total Power Dissipation Ptot (mW)
0
0 25 50 75 100 125 150
Ambient Temperature T
A (˚C), Case Temperature TC (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
40
µ
500 A
µ
30
20
Collector Current IC (mA)
10
0
012345
Collector to Emitter Voltage VCE (V)
450 A
µ
400 A
350 A
µ
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
IB = 50 A
µ
20
Collector Current I
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage V
BE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
10
DC Current Gain hFE
1
0.001
0.01 0.1 1 10 100
Collector Current I
VCE = 2 V
C (mA)
Capacitance/f
T Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.50
(pF)
re
0.40
0.30
0.20
0.10
Reverse Transfer Capacitance C
0
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage V
f = 1 MHz
CB
(V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10521EJ01V0DS
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1
Collector Current IC (mA)
10 100
3
Page 4
Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
(dB)
2
|
25
21e
20
15
10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
0.1 1.0 10.0
MSG
2
|S21e|
Frequency f (GHz)
MAG
VCE = 2 V
C
= 20 mA
I
2SC5508
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
f = 1 GHz
V
CE
= 2 V
25
20
(dB)
2
|
21e
15
10
5
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
1 10 100
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
f = 1 GHz
VCE = 2 V
15
(dBm)
out
10
MSG
2
|
S
21e
|
Collector Current IC (mA)
P
out
125
100
75
(dB)
2
|
21e
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
20
15
(mA)
C
(dBm)
out
10
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
f = 2 GHz
V
CE
= 2 V
25
MAG
20
15
MSG
2
|S
21e
|
10
5
0
1 10 100
Collector Current I
C
(mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
f = 2 GHz
VCE = 2 V
125
P
out
100
75
(mA)
C
5
I
C
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10521EJ01V0DS
50
Collector Current I
25
0
5
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power Pin (dBm)
50
I
C
Collector Current I
25
0
Page 5
Noise Characteristics
2SC5508
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
G
NF
a
f = 1.0 GHz
CE
= 2 V
V
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
Ga
f = 2.0 GHz
CE
= 2 V
V
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
15
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
Ga
NF
f = 1.5 GHz
CE
= 2 V
V
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
Ga
f = 2.5 GHz
CE
= 2 V
V
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
15
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current IC (mA)
NF
10
Associated Gain G
5
0
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
10
Associated Gain G
5
0
Data Sheet PU10521EJ01V0DS
5
Page 6
EQUAL NF CIRCLE
V
CE
= 2 V
IC = 5 mA
f = 1 GHz
CE
= 2 V
V
IC = 5 mA
f = 2 GHz
Unstable area
2SC5508
Unstable area
NF
3.0 dB
4.0 dB
min
= 1.0 dB
1.5 dB
2.0 dB
2.5 dB
3.5 dB
min
= 1.1 dB
Γ
opt
NF
3.0 dB
2.0 dB
2.5 dB
3.5 dB
4.0 dB
Γ
1.5 dB
opt
6
Data Sheet PU10521EJ01V0DS
Page 7
NOISE PARAMETERS
VCE = 2 V, IC = 3 mA
2SC5508
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
VCE = 2 V, IC = 5 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
NFmin
(dB)
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
NFmin
(dB)
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
Ga
(dB)
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
Ga
(dB)
22.5
21.8
21.1
18.1
16.7
16.3
15.9
14.3
Γopt
MAG. ANG.
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
MAG. ANG.
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
Γopt
28.1
28.8
31.7
71.1
106.2
118.5
130.5
–179.7
Rn/50
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
Rn/50
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
VCE = 2 V, IC = 10 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
NFmin
(dB)
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
VCE = 2 V, IC = 20 mA
f
(GHz)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
NFmin
(dB)
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
Ga
(dB)
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
Ga
(dB)
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
Γopt
MAG. ANG.
0.07
0.07
0.08
0.13
0.16
0.17
0.19
0.25
MAG. ANG.
0.26
0.26
0.27
0.30
0.33
0.34
0.35
0.40
–159.4
–157.5
–155.7
–149.2
–146.1
–145.0
–143.9
–136.7
Γopt
–158.1
–155.5
–153.1
–142.6
–137.3
–135.7
–134.1
–126.5
Rn/50
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Rn/50
0.12
0.13
0.13
0.14
0.15
0.06
0.16
0.18
Data Sheet PU10521EJ01V0DS
7
Page 8
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
2.05±0.1
+0.1
0.40
–0.05
1.25±0.1
–0.05
+0.1
0.30
T79
0.650.65
1.30
1.25
2.0±0.1
0.600.65
2SC5508
+0.1
0.30
12
–0.05
43
–0.05
+0.1
0.30
–0.05
+0.1
0.11
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
8
Data Sheet PU10521EJ01V0DS
Page 9
2SC5508
•
The information in this document is current as of September, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10521EJ01V0DS
9
Page 10
2SC5508
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
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0406
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