Page 1
DATA SHEET
©
NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
2SC5337
Part Number Quantity Supplying Form
2SC5337 25 pcs (Non reel) • Magazine case
2SC5337-T1 1 kpcs/reel • 12 mm wide embossed taping
• Collector face the perforat i on side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T
2
Mounted on 16 cm
Note
× 0.7 mm (t) ceramic substrate (Copper plating)
CBO
CEO
EBO
C
Note
tot
P
j
stg
30 V
15 V
3.0 V
250 mA
2.0 W
150
−
65 to +150
°
C
°
C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10939EJ2V1DS00 (2nd edition)
Date Published September 2001 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
1996, 2001
Page 2
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
h
NF
NF
CBO
VCB = 20 V, IE = 0 mA – 0.01 5.0
EBO
VBE = 2 V, IC = 0 mA – 0.03 5.0
Note 1
FE
S
VCE = 10 V, IC = 50 mA 40 120 200 –
2
21e
VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 – dB
Note 2
VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 3.5 dB
Note 2
VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 3.5 dB
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
2
IM
in
V
= 105 dBµV/75 Ω, f1 = 190 MHz,
2
f
= 90 MHz, f = f1 − f
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
3
in
V
= 105 dBµV/75 Ω, f1 = 190 MHz,
2
f
= 200 MHz, f = 2 × f1 − f
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration
Distortion
3rd Order Intermoduration Distorti on IM
2SC5337
µ
A
µ
A
– 59.0 – dB
2
– 82.0 – dB
2
Notes 1.
Pulse measurement: PW ≤ 350
RS = RL = 50 Ω, tuned
2.
s, Duty Cycle ≤ 2%
µ
hFE CLASSIFICATION
Rank QQ QR QS
Marking QQ QR QS
hFE Value 40 to 80 60 to 120 100 to 200
2
Data Sheet P10939EJ2V1DS
Page 3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
2SC5337
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Ceramic Substrate
2
× 0.7 mm (t) )
2.0
(W)
tot
1.0
Total Power Dissipation P
0
(16 cm
50 100 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
80
(mA)
C
60
40
Collector Current I
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
(pF)
re
3.0
2.0
1.0
0.5
0.3
Reverse Transfer Capacitance C
135102030
Collector to Base Voltage VCB (V)
f = 1 MHz
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
FE
100
50
DC Current Gain h
VCE = 10 V
0
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
5
(GHz)
T
3
2
1
0.5
0.3
Gain Bandwidth Product f
Collector Current IC (mA)
10 20
CE
= 10 V
V
f = 1 GHz
70 10010 30 50
Data Sheet P10939EJ2V1DS
10
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
10
(dB)
2
|
21e
5
Insertion Power Gain |S
0
10 30 50 70 100
Collector Current I
1000.1 1 10 1 000
VCE = 10 V
f = 1 GHz
C
(mA)
3
Page 4
2SC5337
INSERTION POWER GAIN, MAG
vs. FREQUENCY
2
|S
21e
|
(dB)
2
|
21e
20
10
0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
0.2 0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
(dB)
(dB)
80
2+
2–
(dB)
3
VCE = 10 V
70
60
50
MAG
VCE = 10 V
IC = 50 mA
IM
3
IM
2+
IM
2–
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
4
3
2
Noise Figure NF (dB)
1
0
5 10 20 50 100
Collector Current I
C
(mA)
VCE = 10 V
f = 1 GHz
IM
3
40
30
: Vin = 110 dB V/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM
2+
: Vin = 105 dB V/75 Ω 2 tone each
f = 90 + 100 MHz
IM
2–
: Vin = 105 dB V/75 Ω 2 tone each
f = 190 – 90 MHz
10 50 100 300
2nd Order Intermodulation Distortion (–) IM
2nd Order Intermodulation Distortion (+) IM
3rd Order Intermodulation Distortion IM
Remark
The graphs indicate nominal characteristics.
Collector Current I
µ
µ
µ
C
(mA)
4
Data Sheet P10939EJ2V1DS
Page 5
2SC5337
S-PARAMETERS
VCE = 10 V, IC = 50 mA
Frequency S
11
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
21
S
12
S
22
S
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.592
0.577
0.566
0.558
0.554
0.542
0.527
0.519
0.509
0.514
0.498
0.494
0.487
0.467
0.477
0.471
0.467
0.469
0.465
0.468
−
136.6
−
160.0
−
168.5
−
174.0
−
177.5
−
179.4
177.9
175.8
174.4
171.0
166.8
167.3
161.7
160.4
157.4
154.5
152.5
151.3
149.1
147.0
24.447
12.746
8.591
6.438
5.160
4.312
3.729
3.292
2.983
2.759
2.648
2.665
2.478
2.177
1.973
1.815
1.754
1.639
1.568
1.475
108.4
96.5
91.2
87.2
84.1
82.3
80.9
78.7
77.7
76.6
75.4
71.3
63.0
60.1
57.9
57.2
55.3
54.4
53.4
52.6
0.030
0.042
0.055
0.066
0.083
0.095
0.112
0.123
0.136
0.151
0.166
0.180
0.194
0.216
0.230
0.240
0.260
0.273
0.285
0.289
50.5
57.4
67.3
70.8
68.6
70.6
71.2
74.6
75.0
75.3
75.8
74.7
75.9
74.7
74.9
73.2
72.9
70.5
69.9
69.3
0.465
0.335
0.276
0.269
0.262
0.262
0.251
0.252
0.252
0.257
0.278
0.306
0.314
0.273
0.281
0.291
0.316
0.312
0.316
0.323
−
−
123.0
−
130.1
−
132.7
−
134.5
−
139.1
−
133.4
−
132.9
−
124.6
−
125.3
−
118.4
−
120.2
−
124.2
−
124.0
−
123.2
−
120.2
−
118.7
−
123.1
−
125.5
−
126.3
95.2
VCE = 10 V, IC = 100 mA
Frequency S
11
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
21
S
12
S
22
S
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.564
0.586
0.576
0.561
0.550
0.540
0.538
0.521
0.510
0.524
0.502
0.489
0.488
0.472
0.480
0.470
0.465
0.464
0.460
0.466
−
146.0
−
165.8
−
171.9
−
176.3
179.9
178.2
175.7
174.6
173.2
168.5
165.2
165.9
161.1
157.9
155.3
153.4
151.1
149.5
147.9
146.0
24.857
12.845
8.681
6.541
5.209
4.358
3.772
3.332
3.037
2.780
2.680
2.718
2.578
2.213
2.012
1.846
1.745
1.677
1.571
1.514
Data Sheet P10939EJ2V1DS
105.3
94.5
89.7
86.3
83.5
82.2
80.6
78.4
77.0
76.9
75.3
72.3
63.0
58.7
57.8
57.2
56.5
54.9
53.3
52.3
0.019
0.026
0.041
0.048
0.060
0.069
0.086
0.099
0.113
0.119
0.136
0.156
0.177
0.184
0.194
0.219
0.235
0.248
0.249
0.264
50.2
59.6
73.2
77.8
81.4
82.0
84.2
85.1
85.4
83.5
86.8
83.5
85.5
81.8
85.3
82.2
82.4
79.0
78.6
77.4
0.284
0.204
0.199
0.200
0.196
0.182
0.216
0.210
0.222
0.198
0.213
0.246
0.251
0.209
0.252
0.242
0.240
0.263
0.281
0.276
−
116.1
−
129.9
−
138.7
−
140.1
−
137.0
−
137.6
−
131.0
−
130.5
−
122.2
−
120.1
−
114.9
−
114.9
−
122.8
−
127.2
−
114.1
−
117.6
−
112.9
−
121.9
−
120.0
−
124.0
5
Page 6
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
1.55
0.85
4.5±0.1
2.1
1.6
0.8
2SC5337
1.5±0.1
0.3
3.95±0.25
0.8 MIN.
EBCE
0.46
±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
2.45±0.1
0.1
0.25±0.02
0.42±0.060.42±0.06
6
Data Sheet P10939EJ2V1DS
Page 7
[MEMO]
2SC5337
Data Sheet P10939EJ2V1DS
7
Page 8
2SC5337
•
The information in this document is current as of September, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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