Page 1
DATA SHEET
©
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• High gain: S
• 4-pin power minimold package with improved gain from the 2SC3357
2
= 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
21e
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5336 25 pcs (Non reel) • Magazine case
2SC5336-T1 1 kpcs/reel • 12 mm wide embossed taping
• Collector face the perforat i on side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T
CBO
CEO
EBO
C
Note
tot
P
j
stg
20 V
12 V
3.0 V
100 mA
1.2 W
150
−
65 to +150
°
C
°
C
2
Mounted on 16 cm
Note
× 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
1996, 2001
Page 2
2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Reverse Transfer Capacitance
CBO
VCB = 10 V, IE = 0 mA – – 1.0
EBO
VBE = 1 V, IC = 0 mA – – 1.0
Note 1
FE
h
C
VCE = 10 V, IC = 20 mA 50 120 250 –
T
VCE = 10 V, IC = 20 mA – 6.5 – GHz
2
21e
S
VCE = 10 V, IC = 20 mA, f = 1 GHz – 12 – dB
Note 2
re
VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.5 0.8 pF
µ
A
µ
A
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
s, Duty Cycle ≤ 2%
µ
hFE CLASSIFICATION
Rank RH RF RE
Marking RH RF RE
hFE Value 50 to 100 80 to 160 125 to 250
2
Data Sheet P10938EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
2SC5336
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Ceramic Substrate
(W)
tot
2.0
(16 cm
1.0
Total Power Dissipation P
0
50 100 150
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
FE
50
2
× 0.7 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
(pF)
re
3.0
f = 1 MHz
2.0
1.0
0.5
0.3
Reverse Transfer Capacitance C
135102030
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
CE
= 10 V
V
f = 1 GHz
5
(GHz)
T
3
2
DC Current Gain h
20
10
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
2
|S
21e
20
(dB)
2
|
21e
10
0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
|
0.2 0.4 0.6 0.8 1.0 1.4 2.0
Frequency f (GHz)
100.5 1 5 50
VCE = 10 V
IC = 20 mA
MAG
1
0.5
Gain Bandwidth Product f
0.3
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
VCE = 10 V
f = 1 GHz
(dB)
2
|
21e
10
5
Insertion Power Gain |S
0
1 3 5 10 20 30 50 100
Collector Current I
20 30 5013510
C
(mA)
Data Sheet P10938EJ2V0DS
3
Page 4
2SC5336
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
4
VCE = 10 V
f = 1 GHz
(dB)
3
IM3, IM2 vs. COLLECTOR CURRENT
–100
(dB)
VCE = 10 V,
2
Vin = 100 dB V/50 Ω
–90
Rg = Re = 50 Ω
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
–80
–70
µ
IM
3
3
2
Noise Figure NF (dB)
1
0
0.5 1 5 10 50
Collector Current I
Remark
The graphs indicate nominal characteristics.
C
(mA)
–60
–50
–40
–30
2nd Order Intermodulation Distortion IM
3rd Order Intermodulation Distortion IM
20 30 40 50 60 70
Collector Current I
C
(mA)
IM
2
4
Data Sheet P10938EJ2V0DS
Page 5
2SC5336
S-PARAMETERS
VCE = 10 V, IC = 20 mA
Frequency S
11
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
21
S
12
S
22
S
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.519
0.413
0.413
0.345
0.331
0.320
0.302
0.296
0.283
0.285
0.265
0.260
0.263
0.242
0.252
0.253
0.253
0.257
0.262
0.273
−
−
112.9
−
133.4
−
145.7
−
153.8
−
159.6
−
166.8
−
169.2
−
173.2
−
179.8
175.2
174.1
166.0
163.0
160.1
154.0
149.9
147.2
143.0
141.5
74.5
30.931
18.965
13.324
10.164
8.177
6.834
5.832
5.107
4.600
4.200
3.930
3.979
3.741
3.115
2.844
2.595
2.420
2.305
2.171
2.049
131.9
111.5
101.9
95.9
91.8
89.1
86.7
84.3
83.1
82.3
80.8
78.5
68.6
66.6
65.7
64.1
63.7
63.0
62.6
61.2
0.017
0.031
0.038
0.045
0.055
0.064
0.074
0.077
0.088
0.097
0.100
0.109
0.114
0.119
0.133
0.140
0.158
0.165
0.172
0.177
60.6
61.9
65.1
69.8
71.8
70.9
73.9
74.4
71.2
74.5
76.3
75.9
76.8
78.3
82.0
81.0
80.9
82.2
80.5
78.3
0.752
0.570
0.465
0.428
0.436
0.438
0.434
0.429
0.436
0.455
0.467
0.529
0.551
0.509
0.510
0.496
0.515
0.518
0.536
0.524
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
30.2
39.7
39.8
40.1
41.1
43.5
47.5
47.8
46.5
47.8
46.8
47.4
55.8
55.8
58.5
55.2
54.8
56.5
58.6
61.5
VCE = 10 V, IC = 40 mA
Frequency S
11
(GHz)MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
(deg.) (deg.) (deg.) (deg.)
21
S
12
S
22
S
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.378
0.317
0.308
0.299
0.297
0.288
0.274
0.261
0.255
0.260
0.243
0.239
0.245
0.216
0.235
0.243
0.233
0.242
0.249
0.260
−
−
131.8
−
150.1
−
158.7
−
165.5
−
169.2
−
173.7
−
177.3
178.9
173.0
169.4
169.3
160.3
157.8
155.3
148.8
146.0
144.6
141.9
140.4
97.1
32.908
18.819
12.955
9.775
7.899
6.586
5.607
4.879
4.435
4.024
3.801
3.827
3.587
2.980
2.726
2.537
2.348
2.200
2.073
1.986
Data Sheet P10938EJ2V0DS
123.3
106.0
97.5
93.1
89.8
87.6
85.2
83.5
82.2
81.4
80.6
78.2
68.4
66.0
66.1
64.0
64.2
63.5
63.3
61.7
0.017
0.027
0.035
0.042
0.052
0.061
0.071
0.081
0.092
0.095
0.098
0.109
0.117
0.125
0.137
0.143
0.159
0.163
0.171
0.184
71.1
71.2
71.8
78.1
78.5
79.1
77.4
76.4
76.5
77.6
77.1
78.3
78.0
80.3
86.5
80.6
81.2
80.4
81.7
77.5
0.665
0.487
0.398
0.393
0.399
0.407
0.400
0.415
0.399
0.440
0.441
0.494
0.517
0.486
0.500
0.474
0.496
0.491
0.534
0.535
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
34.7
38.7
38.5
36.9
37.6
39.9
44.6
47.4
46.2
44.3
45.2
46.2
55.4
54.5
59.0
53.7
56.8
53.6
58.0
61.3
5
Page 6
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
1.55
0.85
4.5±0.1
2.1
1.6
0.8
2SC5336
1.5±0.1
0.3
3.95±0.25
0.8 MIN.
EBCE
0.46
±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
2.45±0.1
0.1
0.25±0.02
0.42±0.060.42±0.06
6
Data Sheet P10938EJ2V0DS
Page 7
[MEMO]
2SC5336
Data Sheet P10938EJ2V0DS
7
Page 8
2SC5336
•
The information in this document is current as of August, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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