NEC 2sc5191 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

• Low Voltage Operation, Low Phase Distortion

• Low Noise

NF = 1.5 dB TYP. @ V

NF = 1.7 dB TYP. @ V

• Large Absolute Maximum Collector Current

I

C = 100 mA

• 3-pin minimold Package

ORDERING INFORMATION

Part Number Quantity Supplying Form

CE = 3 V, IC = 7 mA, f = 2 GHz

CE = 1 V, IC = 3 mA, f = 2 GHz

2SC5191

2SC5191 50 pcs (Non reel)

2SC5191-T1B 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

• 8 mm wide embossed taping

• Pin 3 (collector) face to perforation side of the tape

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 9 V

Collector to Emitter Voltage VCEO 6 V

Emitter to Base Voltage VEBO 2 V

Collector Current IC 100 mA

Total Power Dissipation Ptot

Junction Temperature Tj 150

Storage Temperature Tstg

Note Free air

Note

200 mW

°C

−65 to +150 °C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10523EJ01V0DS (1st edition)
(Previous No. P10395EJ2V1DS00)
Date Published August 2004 CP(K)
Printed in Japan

The mark  shows major revised points.

©

NEC Compound Semiconductor Devices, Ltd. 1994 , 2004

2SC5191

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA

Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA

DC Current Gain hFE

Note 1

VCE = 1 V, IC = 3 mA 80

RF Characteristics

Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz 4.0 4.5

Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz

2

S

21e

S

21e

CE = 1 V, IC = 3 mA, f = 2.0 GHz 2.5 3.5

V

2

CE = 3 V, IC = 20 mA, f = 2.0 GHz

V

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz

Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz

Reverse Transfer Capacitance Cre

Note 2

VCB = 1 V, IE = 0 mA, f = 1.0 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank FB

− −

− −

−

−

−

−

−

−

8.5

6.5

1.7 2.5 dB

1.5

0.75 0.85 pF

100 nA

100 nA

160

−

−

−

−

−

−

GHz

GHz

dB

dB

dB

Marking T88

hFE Value 80 to 160

2

Data Sheet PU10523EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

200

(mW)

tot

100

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

Free Air

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

1.2

(pF)

re

1.0

0.8

0.6

f = 1 MHz

2SC5191

Total Power Dissipation P

50 100 1500

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 1 V

20
10

(mA)

5

C

2
1

0.5

0.2

0.1

Collector Current I

0.05

0.02

0.01

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

VCE = 1 V

FE

100

0.4

Reverse Transfer Capacitance C

246 8100

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

30

200 A

µ

180 A

µ

160 A

(mA)

C

20

10

Collector Current I

0.5 1.00

1234560

Collector to Emitter Voltage VCE (V)

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ

I

B

= 20 A

µ

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

10

f = 2 GHz

8

(GHz)

T

6

4

VCE = 3 V

VCE = 1 V

DC Current Gain h

0

1 2 5 10 20 50 1000.1 0.2 0.5

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

Data Sheet PU10523EJ01V0DS

2

Gain Bandwidth Product f

0

12 205 50 10010

Collector Current IC (mA)

3

2SC5191

MAXIMUM AVAILABLE GAIN/INSERTION

POWER GAIN vs. FREQUENCY

40

VCE = 1 V

(dB)

2

|

30

21e

20

10

Insertion Power Gain |S

Maximum Available Gain MAG (dB)

0

0.1 0.50.2 1 2 5 10

2

|S

21e

|

Frequency f (GHz)

MAG

IC = 3 mA

NOISE FIGURE vs.
COLLECTOR CURRENT

5

f = 2 GHz

4

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

8

f = 2 GHz

(dB)

2

|

6

21e

4

2

Insertion Power Gain |S

0

1 2 5 10 20 50 100

Collector Current IC (mA)

VCE = 3 V

VCE = 1 V

3

2

Noise Figure NF (dB)

1

0

12 5 2010 50 100

Collector Current IC (mA)

VCE = 3 V

VCE = 1 V

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

4

Data Sheet PU10523EJ01V0DS

PACKAGE DIMENSIONS

3-PIN MINIMOLD (UNIT: mm)

0.950.95

–0.05

+0.1

0.4

2

2.8±0.2

1.5

T88

0.65

+0.1
–0.15

2SC5191

2.9±0.2

1.1 to 1.4

1

0.3

PIN CONNECTIONS

1.

Emitter

2.

Base

3.

Collector

Marking

0 to 0.1

3

–0.05

+0.1

0.4

–0.05

+0.1

0.16

Data Sheet PU10523EJ01V0DS

5

2SC5191

•

The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

6

Data Sheet PU10523EJ01V0DS

2SC5191

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

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