NEC 2sc5186 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR LOW-NOISE MICROWAVE AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

• 3-pin ultra super minimold package

ORDERING INFORMATION

Part Number Quantity Supplying Form

2SC5186

2SC5186 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5186-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

Free air

Note

CBO

CEO

EBO

C

Note

tot

P

j

stg

5V
3V

2V
30 mA
90 mW

150

−

65 to +150

°

C

°

C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1994, 2003



2SC5186

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1) f
Gain Bandwidth Product (2) f
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz – 1.3 2.0 dB
Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz – 1.3 2.0 dB
Reverse Transfer Capacitance

CBO

VCB = 5 V, IE = 0 mA – – 100 nA

EBO

VEB = 1 V, IC = 0 mA – – 100 nA

Note 1

FE

h



S



S

C

VCE = 2 V, IC = 20 mA 70 – 140 –

T

VCE = 2 V, IC = 20 mA, f = 2 GHz 9 11 – GHz

T

VCE = 1 V, IC = 10 mA, f = 2 GHz 7 9 – GHz

2



21e

VCE = 2 V, IC = 20 mA, f = 2 GHz 8.5 10 – dB

2



21e

VCE = 1 V, IC = 10 mA, f = 2 GHz 6.0 7.5 – dB

Note 2

re

VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.4 0.8 pF

Notes 1.

Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded

2.

hFE CLASSIFICATION

Rank FB

Marking 86

hFE Value 70 to 140

s, Duty Cycle ≤ 2%

µ

2

Data Sheet PU10213EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified)

2SC5186

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

250

Free Air

200

(mW)

tot

150

100

90

50

Total Power Dissipation P

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

50

VCE = 2 V

40

(mA)

C

30

20

10

Collector Current I

0 0.5 1.0

Base to Emitter Voltage VBE (V)

REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE

0.8

(pF)

re

0.6

0.4

0.2

Reverse Transfer Capacitance C

0246 108

Collector to Base Voltage VCB (V)

f = 1 MHz

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

25

20

(mA)

C

15

10

5

Collector Current I

012

Collector to Emitter Voltage VCE (V)

200 A
180 A
160 A
140 A
120 A
100 A

80 A
60 A

40 A

IB = 20 A

34

µ
µ
µ
µ
µ
µ
µ
µ

µ
µ

DC CURRENT GAIN vs.
COLLECTOR CURRENT

500

200

FE

100

50

DC Current Gain h

20

10

210520501 100

1 V

Collector Current IC (mA)

VCE = 2 V

Data Sheet PU10213EJ01V0DS

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

f = 2 GHz

15

(GHz)

T

10

5

Gain Bandwidth Product f

35710 20210.7 30

Collector Current IC (mA)

VCE = 2 V

1 V

3

2SC5186

INSERTION POWER GAIN
vs. COLLECTOR CURRENT

f = 2 GHz

(dB)

10

2

|

21e

5

Insertion Power Gain |S

0

0.7 1 7322010530
Collector Current IC (mA)

Remark

The graphs indicate nominal characteristics.

VCE = 2 V

1 V

3

2

Noise Figure NF (dB)

1

0.5 1 2 3 5 7 10 20 30

NOISE FIGURE vs.
COLLECTOR CURRENT

VCE = 1 V

2 V

C

Collector Current I

(mA)

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/

f = 2 GHz

4

Data Sheet PU10213EJ01V0DS

PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (UNIT: mm)

2

+0.1

0.50.5

1.0

1.6±0.1

1

0.6

0.75±0.05

–0

0.2

1.6±0.1

0.8±0.1

86

0 to 0.1

2SC5186

–0

+0.1

–0.05

+0.1

0.15

0.3

3

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Data Sheet PU10213EJ01V0DS

5

2SC5186

•

The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

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•

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•

Descriptions of circuits, software and other related information in this document are provided for illustrative
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M8E 00. 4 - 0110

6

Data Sheet PU10213EJ01V0DS

2SC5186

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