NEC 2sc5015 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD (18)

FEATURES

• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

• Low noise and high gain

• Low voltage operation

• 4-pin super minimold (18) package

ORDERING INFORMATION

Part Number Quantity Supplying Form

2SC5015

2SC5015 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5015-T1 3 kpcs/reel • Pin 3 (Base), Pin 4 (Emitter) face the perforation si de of the tape

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T

CBO

CEO

EBO

C

tot

stg

9V
6V
2V

30 mA

150 mW

j

150

−

65 to +150

°

C

°

C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10403EJ01V0DS (1st edition)
(Previous No. P10394EJ2V0DS00)
Date Published June 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1993, 2003



ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz
Reverse Transfer Capacitance

CBO

VCB = 5 V, IE = 0 mA

EBO

VEB = 1 V, IC = 0 mA

Note 1

FE

h



S

C

VCE = 3 V, IC = 10 mA 75

T

VCE = 3 V, IC = 10 mA, f = 2 GHz

2



21e

VCE = 3 V, IC = 10 mA, f = 2 GHz 9 11

Note 2

re

VCB = 3 V, IE = 0 mA, f = 1 MHz

−−

−−

−

−

−

−

12

1.5 2.5 dB

0.3 0.5 pF

2SC5015

0.1

0.1

150

−

−

µ

A

µ

A

−

GHz

dB

Notes 1.

Pulse measurement: PW ≤ 350

Collector to base capacitance when the emitter grounded

2.

hFE CLASSIFICATION

Rank KB

Marking T83

hFE Value 75 to 150

s, Duty Cycle ≤ 2%

µ

2

Data Sheet PU10403EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified)

2SC5015

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

250

200

(mW)

tot

150

100

50

Total Power Dissipation P

0 25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 1 V

10

(mA)

C

1

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

2

(pF)

f = 1 MHz

re

1

0.5

0.2

Reverse Transfer Capacitance C

0.1
1510220

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 2 V

10

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.0001

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 3 V

10

(mA)

C

1

0.1

0.01

Collector Current I

0.001

0.0001

Base to Emitter Voltage VBE (V)

0.60.50.4 0.7 0.8 1.0

0.60.50.4 0.7 0.8 1.0

0.9

0.9

0.1

0.01

Collector Current I

0.001

0.0001

0.60.50.4 0.7 0.8 1.0

Base to Emitter Voltage VBE (V)

0.9

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

30

25

(mA)

C

20

15

10

Collector Current I

5

02 648

Collector to Emitter Voltage VCE (V)

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ

IB = 20 A

µ

Data Sheet PU10403EJ01V0DS

3

2SC5015

DC CURRENT GAIN vs.
COLLECTOR CURRENT

1 000

FE

100

DC Current Gain h

10

DC CURRENT GAIN vs.
COLLECTOR CURRENT

1 000

FE

VCE = 1 V

10.1 10 100

Collector Current IC (mA)

VCE = 3 V

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

FE

100

DC Current Gain h

10

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

14

CE

= 3 V

V
f = 2 GHz

12

(GHz)

T

10

VCE = 2 V

10.1 10 100

Collector Current IC (mA)

100

DC Current Gain h

10

10.1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

50

VCE = 3 V
I

C

= 10 mA

40

(dB)

2

|

30

21e

20

10

0

Maximum Available Power Gain MAG (dB)

Insertion Power Gain |S

0.1 0.2 0.5 1 2 5
Frequency f (GHz)

MAG

|S

21e

8

6

4

2

Gain Bandwidth Product f

0

2 5 10 20150

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

12

VCE = 3 V
f = 2 GHz

10

(dB)

2

|

21e

8

6

4

2

|

2

Insertion Power Gain |S

0

1 5 10 20250

Collector Current I

C

(mA)

4

Data Sheet PU10403EJ01V0DS

NOISE FIGURE vs.

COLLECTOR CURRENT

5

VCE = 3 V
f = 2 GHz

4

3

2

Noise Figure NF (dB)

1

0

110205250

Collector Current I

C

(mA)

2SC5015

Remark

The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/

Data Sheet PU10403EJ01V0DS

5

PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (18) (UNIT: mm)

–0.05

+0.1

0.3

0.650.60

1.25

2.0±0.2

–0.05

+0.1

0.4

0.3

0.9±0.1

2.1±0.2

1.25±0.1

21

T83

2SC5015

–0.05

+0.1

0.3

3

0.650.65

1.30

4

–0.05

+0.1

0.3

–0.05

+0.1

0.15

0 to 0.1

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

6

Data Sheet PU10403EJ01V0DS

2SC5015

•

The information in this document is current as of June, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

Data Sheet PU10403EJ01V0DS

7

2SC5015

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: [phone] FAX: [phone] E-mail: [email protected]

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

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TEL: [phone] FAX: [phone]

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