NEC 2sc5011 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD

FEATURES

• High Gain Bandwidth Product (fT = 6.5 GHz TYP.)

• Low Noise, High Gain

• Low Voltage Operation

• 4-pin super minimold Package

ORDERING INFORMATION

Part Number Quantity Supplying Form

2SC5011

2SC5011 50 pcs (Non reel)

2SC5011-T1 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 3 V

Collector Current IC 100 mA

Total Power Dissipation Ptot

Junction Temperature Tj 150

Storage Temperature Tstg

Note Free air

Note

150 mW

°C

−65 to +150 °C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10515EJ01V0DS (1st edition)
(Previous No. P10399EJ2V0DS00)
Date Published August 2004 CP(K)
Printed in Japan

The mark  shows major revised points.

©

NEC Compound Semiconductor Devices, Ltd. 1993 , 2004

2SC5011

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA

Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA

DC Current Gain hFE

RF Characteristics

Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA

Insertion Power Gain

Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Reverse Transfer Capacitance Cre

Note 1

VCE = 10 V, IC = 20 mA 50 120 250

2

S

21e

CE = 10 V, IC = 20 mA, f = 1.0 GHz 11 13

V

Note 2

VCB = 10 V, IE = 0 mA, f = 1.0 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank EB FB GB

− −

− −

−

−

−

6.5 – GHz

1.1 2.0 dB

0.5 0.9 pF

1.0

1.0

−

µ
µ

−

dB

A

A

Marking R26 R27 R28

hFE Value 50 to 100 80 to 160 125 to 250

2

Data Sheet PU10515EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

250

Free Air

200

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5.0
f = 1 MHz

2.0

2SC5011

150

100

50

Total Power Dissipation Ptot (mW)

50

40

30

20

10

Collector Current IC (mA)

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

CE = 10 V

V

1.0

0.5

0.2

Reverse Transfer Capacitance Cre (pF)

0.1

1

2

Collector to Base Voltage VCB (V)

51020 50

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

30

20

10

Collector Current IC (mA)

IB =

200

180
160

140
120

100
80

60
40

20

A

µ
µ

A

µ

A

A

µ
µ

A

µ

A
A

µ

A

µ
µ

A

µ

A

0.5 1.00

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

500

CE = 10 V

V

200

100

50

DC Current Gain hFE

20

10

1

Remark The graphs indicate nominal characteristics.

5 10 50 100

Collector Current IC (mA)

Data Sheet PU10515EJ01V0DS

10

5

Gain Bandwidth Product fT (GHz)

0

510150

Collector to Emitter Voltage VCE (V)

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

CE = 10 V

V
f = 1 GHz

1

5 10 50 100

Collector Current IC (mA)

3

2SC5011

MAXIMUM AVAILABLE GAIN/INSERTION

POWER GAIN vs. FREQUENCY

50

CE

= 10 V

V
f = 20 mA

(dB)

2

40

|

21e

30

20

10

Insertion Power Gain |S

Maximum Available Gain MAG (dB)

0

0.1

0.5 1.0 5.0 10

Frequency f (GHz)

MAG

|S

21e

2

|

NOISE FIGURE vs.
COLLECTOR CURRENT

5

CE

= 10 V

V
f = 1 GHz

4

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

20

CE

= 10 V

V
f = 1 GHz

(dB)

2

|

21e

10

Insertion Power Gain |S

0

1

Collector Current IC (mA)

5 10 50 100

3

2

Noise Figure NF (dB)

1

0

1

5 10 50 100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

4

Data Sheet PU10515EJ01V0DS

PACKAGE DIMENSIONS

4-PIN SUPER MINIMOLD (UNIT: mm)

0.650.60

1.25

2.0±0.2

0.9±0.1

–0.05

+0.1

0.3

–0.05

+0.1

0.4

0.3

21

2.1±0.2

1.25±0.1

R27

2SC5011

–0.05

+0.1

0.3

3

0.650.65

1.30

4

–0.05

+0.1

0.3

–0.05

+0.1

0.15

0 to 0.1

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Data Sheet PU10515EJ01V0DS

5

2SC5011

•

The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

6

Data Sheet PU10515EJ01V0DS

2SC5011

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: [phone] FAX: [phone]

California Eastern Laboratories, Inc. http://www.cel.com/
TEL: [phone] FAX: [phone]

TEL: [phone]
TEL: [phone]
TEL: [phone]

FAX: [phone]
FAX: [phone]
FAX: [phone]

0406