NEC 2SC5008-T1, 2SC5008-T2 Datasheet

©
1993
DATA SHEET
DESCRIPTION
The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF: 1.9 dB TYP. (@ V
CE = 3 V, IC = 5 mA, f = 2 GHz)
• High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5008 50 pcs./Unit
2SC5008-T1 3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage V
EBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT 125 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature Tstg –65 to + 150 ˚ C
SILICON TRANSISTOR
Document No. P10387EJ2V0DS00 (2nd edition) (Previous No. TD-2433) Date Published July 1995 P Printed in Japan
2SC5008
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape.
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5 0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
2SC5008
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0
µ
AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 80 160 VCE = 3 V, IC = 5 mA
*1
Gain Bandwidth Product fT 5.5 8.0 GHz VCE = 3 V, IC = 5 mA Feed-back Capacitance Cre 0.3 0.7 pF VCB = 3 V, IE = 0, f = 1 MHz
*2
Insertion Power Gain |S21e|
2
5.5 7.5 dB VCE = 3 V, IC = 5 mA, f = 2 GHz
Noise Figure NF 1.9 3.2 dB VCE = 3 V, IC = 5 mA, f = 2 GHz
*1 Pulse Measurement PW 350 µs, Duty Cycle 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
h
FE Classification
RANK FB
Marking 44
hFE 80 to 160
2SC5008
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
20
0
10
1.00.5
150
0
50
15010050
100
200
0.5
10
505
25
0
510
20
15
10
5
V
CE = 3 V
IB = 160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
20 A
µ
201021
100
20
50
VCE = 3 V
0.5
0
505
12
0
0.5
8
6
4
2
201021
6
2
4
VCE = 3 V f = 2 GH
Z
502010512
8
10
12 VCE = 3 V f = 2 GH
Z
10
 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT – Total Power Dissipation – mW
TA – Ambient Temperature – °C
 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
 DC CURRENT GAIN vs. COLLECTOR CURRENT
 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
 INSERTION POWER GAIN vs. COLLECTOR CURRENT
IC – Collector Current – mAhFE – DC Current Gain
f
T – Gain Bandwidth Product – GHz
|S
21e|
2
– Insertion Power Gain – dB
I
C – Collector Current – mA
VBE – Base to Emitter Voltage – V
I
C – Collector Current – mAIC – Collector Current – mA
V
CE – Collector to Emitter Voltage – V IC – Collector Current – mA
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