©
1993
DATA SHEET
DESCRIPTION
The 2SC5008 is an NPN epitaxial silicon transistor designed for use
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface, process (NEST2 process) which is an NEC
proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF: 1.9 dB TYP. (@ V
CE = 3 V, IC = 5 mA, f = 2 GHz)
• High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5008 50 pcs./Unit
2SC5008-T1 3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage V
EBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT 125 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature Tstg –65 to + 150 ˚ C
SILICON TRANSISTOR
Document No. P10387EJ2V0DS00 (2nd edition)
(Previous No. TD-2433)
Date Published July 1995 P
Printed in Japan
2SC5008
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5 0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector