NEC 2SC5006-T1, 2SC5006-T2 Datasheet
©
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
2SC5006
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.2 dB TYP. (@ V
CE = 3 V, IC = 7 mA, f = 1 GHz)
• High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5006 50 pcs./Unit
2SC5006-T1 3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage V
EBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 125 mW
Junction Temperature T
j 150 ˚ C
Storage Temperature Tstg –60 to +150 ˚ C
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5 0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC5006
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0
µ
AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 80 160 VCE = 3 V, IC = 7 mA
*1
Gain Bandwidth Product fT 3.0 4.5 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
Feed-Back Capacitance Cre 0.7 1.5 pF VCB = 3 V, IE = 0, f = 1 MHz
*2
Insertion Power Gain |S21e|
2
7.0 9.0 dB VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure NF 1.2 2.5 dB VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
h
FE Classification
RANK FB
Marking 24
hFE 80 to 160
2SC5006
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
20
0
10
1.00.5
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
– Total Power Dissipation – mW
150
0
50
TA – Ambient Temperature – ˚C
15010050
100
200
0.5
10
505
25
0
510
20
15
10
5
VCE = 3 V
IB = 160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
20 A
µ
201021
100
20
50
VCE = 3 V
14
0.5
0
505
10
0
0.5 100
8
6
4
2
201021
6
2
4
VCE = 3 V
f = 1 GH
Z
502010512
100
8
10
12
VCE = 3 V
f = 1 GH
Z
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
– Collector Current – mAh
FE
– DC Current Gain
f
T
– Gain Bandwidth Product – GHz
|S
21e
|
2
– Insertion Power Gain – dB
I
C
– Collector Current – mA
VBE – Base to Emitter Voltage – V
I
C
– Collector Current – mAIC – Collector Current – mA
V
CE
– Collector to Emitter Voltage – V
Free Air
IC – Collector Current – mA
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