NEC 2SC5005-T1, 2SC5005-T2 Datasheet
©
1992
DATA SHEET
SILICON TRANSISTOR
2SC5005
PACKAGE DIMENSIONS
in millimeters
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5 0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1
–0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5005 is a low supply voltage transistor designed for UHF
OSC/MIX.
It is suitable for a high density surface mount assembly since the
transistor has been applied ultra super mini mold package.
FEATURES
• High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)
• Ultra Super Mini Mold Package. (1.6 mm × 0.8 mm)
ORDERING INFORMATION
QUANTITY PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (Collector) face to
perforation side of the tape.
PART NUMBER
2SC5005 50 pcs./unit
2SC5005 – T1 3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
Collector to Base Voltage V
CBO 20 V
Collector to Emitter Voltage V
CEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 30 mA
Total Power Dissipation P
T 100 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg –55 to +125 °C
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Document No. P10384EJ2V0DS00 (2nd edition)
(Previous No. TD-2429)
Date Published July 1995
Printed in Japan
1995
2SC5005
2
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Collector Cutoff Current ICBO 0.1
µ
AVCB = 15 V,IE = 0
Emitter Cutoff Current IEBO 0.1
µ
AVEB = 1 V, IC = 0
Collector Saturation Voltage VCE(sat) 0.5 V hFE = 10, IC = 5 mA
DC Current Gain hFE 60 120 VCE = 5 V, IC = 5 mA
*1
Gain Bandwidth Product fT 3.0 5.5 GHz VCE = 5 V, IC = 5 mA
Feed–back Capacitance Cre 0.7 0.9 pF VCB = 5 V, IE = 0, f = 1 MHz
*2
Insertion Power Gain |S21e|
2
5.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three–terminal capacitance bridge.
hFE Classification
Rank FB
Marking 73
hFE 60 to 120
2SC5005
3
TYPICAL CHARACTERISTICS (TA = 25 °C)
50
P
T
– Total Power Dissipation – mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
I
C
– Collector Current – mA
I
C
– Collector Current – mA
h
FE
– DC Current Gain
f
T
– Gain Bandwidth Product – GHz|S
21
e|
2
– Insertion Power Gain – dB
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER
V
BE
– Base to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
– Collector to Emitter Voltage – V IC – Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
– Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
– Collector Current – mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
0 50 100 150
150
50
Free Air
0 0.2 1.0
8
24
V
CE
= 5 V
16
0.4 0.6 0.8
02 10
10
20
30
46 8
10
0.5 1 5 10 50
20
100
200
220
0
0.5 1 5 10 50
2
4
6
8
10
220
0
0.5 1 10 20 50
2
4
10
12
14
V
CE
= 5 V
f = 1 GHz
8
6
V
CE
= 5 V
25
V
CE
= 5 V
I
C
= 5 mA
m
140 A
120 A
100 A
80 A
60 A
40 A
20 A
m
m
m
m
m
m
m
IB = 160 A
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