NEC 2SC4959-T2, 2SC4959 Datasheet

DATA SHEET

SILICON TRANSISTOR

2SC4959

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

FEATURES

• Low Noise, High Gain

• Low Voltage Operation

• Low Feedback Capacitance

Cre = 0.4 pF TYP.

ORDERING INFORMATION

PART

NUMBER

2SC4959–T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora-

2SC4959–T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face

* Please contact with responsible NEC person, if you require evaluation

sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage VCBO 9V

QUANTITY PACKING STYLE

Embossed tape 8 mm wide.

tion side of the tape.

Embossed tape 8 mm wide.

to perforation side of the tape.

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.1

1.25 ± 0.1

2

–0

+0.1

0.3

2.0 ± 0.2

0.9 ± 0.1

1

0.65 0.65

0.3

PIN CONNECTIONS

Emitter

1.
Base

2.
Collector

3.

Marking

0 to 0.1

3

–0

+0.1

0.3

–0.05

+0.1

0.15

Collector to Emitter Voltage V
Emitter to Base Voltage VEBO 2V
Collector Current I
Total Power Dissipation P
Junction Temperature Tj 150 °C
Storage Temperature T

Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan

CEO 6V

C 30 mA

T 150 mW

stg –65 to +150 °C

Caution; Electrostatic sensitive Device.

The mark ★ shows revised points.

1995

©

1992

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

2SC4959

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Feed back Capacitance C
Insertion Power Gain |S

CBO

EBO

21e

FE

T

re

2

|

75 150 VCE = 3 V, IC = 10 mA

12 GHz VCE = 3 V, IC = 10 mA, f = 2.0 GHz

0.4 0.7 pF VCB = 3 V, IE = 0, f = 1 MHz

7 8.5 dB VCE = 3 V, IC = 10 mA, f = 2.0 GHz

0.1

0.1

µ

AVCB = 5 V, IE = 0

µ

AVEB = 1 V, IC = 0

*1

Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA, f = 2.0 GHz

*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank T83

Marking T83

h

FE

75 to 150

TYPICAL CHARACTERISTICS (TA = 25 °C)

*2

TOTAL POWER DISSIPATION
vs.AMBIENT TEMPERATURE

Free Air

200

100

– Total Power Dissipation – mW

T

P

0 50 100 150

TA – Ambient Temperature – °C VBE – Base to Emitter Voltage – V

COLLECTOR CURRENT vs. 
BASE TO EMITTER VOLTAGE

50

V

CE

= 3 V

40

30

20

– Collector Current – mA

10

C

I

0

0.5 1.0

2