Page 1
DATA SHEET
SILICON POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SC4814
The 2SC4814 is a power transistor featuring low-saturation voltage and high h
. This transistor is ideal for high-
FE
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
• High hFE
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
CE(sat)
: V
≤ 0.3 V @IC = 1.5 A, IB = 10 mA
CE(sat)
: hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
stg
PW ≤ 300 µs, duty cycle ≤ 10% ±5.0
Ta = 25°C
T
j
120 V
100 V
7.0 V
±2.5
1.0 A
1.8 W
150
−55 to +150 °C
°C
A
A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Base saturation voltage V
Gain bandwidth product f
Collector capacitance C
Turn-on time t
Storage time t
Fall time t
CBO
EBO
FE1
FE2
CE(sat)
BE(sat)
VCB = 120 V, IE = 0 50
VEB = 5 V, IC = 0 50
*VCE = 2 V, IC = 1.0 A 300 700 1,200
*VCE = 2 V, IC = 1.5 A 250 600
*IC = 1.5 A, IB = 10 mA 0.3 V
*IC = 1.5 A, IB = 10 mA 1.3 V
VCE = 10 V, IC = 1.0 A 60 MHz
T
VCE = 10 V, IE = 0 , f = 1 MHz 40 pF
ob
IC = 1.5 A, IB1 = −IB2 = 10 mA
on
R
= 8.0 Ω, VCC = 12 V
stg
f
L
Refer to the test circuit.
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION
0.5
2.0
0.5
2SC4814
A
µ
A
µ
−
−
s
µ
s
µ
s
µ
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
2
0.7 MAX.
Data Sheet D15604EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
2SC4814
Derating dT (%)
C
I
Ambient Temperature Ta (°C)
(A)
C
Collector Current I
Single pulse
Collector to Emitter Voltage VCE (V)
(A)
C
Ambient Temperature Ta (°C)
C/W)
°
(
th(j-a)
Transient Thermal Resistance R
Single pulse
Pulse Width PW (s)
Pulse test
FE
Collector Current I
Collector to Emitter Voltage VCE (V)
DC Current Gain h
Data Sheet D15604EJ2V0DS
Collector Current IC (A)
3
Page 4
2SC4814
(V)
CE(sat )
Collector Saturation Voltage V
(MHz)
T
Pulse test
(V)
BE(sat)
Base Saturation Voltage V
(pF)
ob
Pulse test
Collector Current IC (A)Collector Current IC (A)
Collector Capacitance C
Gain Bandwidth Product f
Collector to Base Voltage VCB (V)
Collector Current IC (A)
Pulse test
s)
s)
µ
µ
s)
(
(
µ
on
stg
(
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Current IC (A)
4
Data Sheet D15604EJ2V0DS
Page 5
2SC4814
SWITCHING TIME (ton, t
, tf) TEST CIRCUIT
stg
Base current
waveform
Collector current
waveform
Data Sheet D15604EJ2V0DS
5
Page 6
2SC4814
•
The information in this document is current as of July, 2001. The information is subject to change
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•
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M8E 00. 4
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