Page 1
DATA SHEET
SILICON POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SC4813
The 2SC4813 is a power transistor developed for high-speed switching and features high h
and low V
FE
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
• High hFE
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
CE(sat)
: V
≤ 0.3 V @IC = 3.0 A, IB = 30 mA
CE(sat)
: hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
stg
PW ≤ 10 ms, duty cycle ≤ 2% ±10
Ta = 25°C
T
j
100 V
100 V
7.0 V
±7.5
2.0 A
1.8 W
150
−55 to +150 °C
CE(sat)
A
A
°C
.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Emitter cutoff current I
DC current gain h
DC current gain h
Collector saturation voltage V
Collector saturation voltage V
Collector saturation voltage V
Collector saturation voltage V
Base saturation voltage V
CBO
EBO
FE1
FE2
CE(sat)1
CE(sat)2
CE(sat)3
CE(sat)4
BE(sat)
Gain bandwidth product f
Collector capacitance C
Turn-on time t
Storage time t
Fall time t
Diode order voltage V
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
VCB = 100 V, IE = 0 10
VEB = 5.0 V, IC = 0 17 mA
*VCE = 2.0 V, IC = 3.0 A 450 2,000
*VCE = 2.0 V, IC = 5.0 A 150
*IC = 3.0 A, IB = 60 mA 0.1 0.2 V
*IC = 3.0 A, IB = 30 mA 0.15 0.3 V
*IC = 5.0 A, IB = 100 mA 0.4 V
*IC = 5.0 A, IB = 50 mA 0.55 V
*IC = 5.0 A, IB = 50 mA 1.2 V
VCE = 5.0 V, IC = 1.0 A 150 MHz
T
VCB = 10 V, IE = 0 , f = 1 MHz 110 pF
ob
IC = 5.0 A, IB1 = −IB2 = 100 mA
on
R
= 3.0 Ω, VCC ≅ 16 V
stg
f
DF
L
IDF = 5.0 A 1.4 V
0.5
2.0
0.5
2SC4813
A
µ
−
−
s
µ
s
µ
s
µ
PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION
Electrode Connection
1. Base 2. Collector 3. Emitter
EQUIVALENT CIRCUIT
0.7 MAX.
2
Data Sheet D15603EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (Ta = 25°°°°C)
(W)
T
Total Power Dissipation P
2SC4813
Derating dT (%)
C
I
(A)
C
Collector Current I
Ambient Temperature Ta (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
C/W)
°
(t) (
th(j-a)
Transient Thermal Resistance r
Single pulse
Pulse Width PW (s)
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
Data Sheet D15603EJ2V0DS
FE
DC Current Gain h
Collector Current IC (A)
3
Page 4
2SC4813
(V)
CE(sat )
Collector Saturation Voltage V
(MHz)
T
Collector Current IC (A)
(V)
BE(sat)
Base Saturation Voltage V
(s)
sw
Collector Current IC (A)
Switching Time t
Gain Bandwidth Product f
Collector Current IC (A)
Collector Current IC (A)
4
Data Sheet D15603EJ2V0DS
Page 5
2SC4813
SWITCHING TIME (ton, t
stg
, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D15603EJ2V0DS
5
Page 6
2SC4813
•
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M8E 00. 4
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