NEC 2sc4703 Datasets

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).
This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface
mount type plastic package, power minimold (SOT-89).

FEATURES

• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBµV/75

tot

• Large P

tot

: P

= 1.8 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

Ω

ORDERING INFORMATION

Part Number Quantity Supplying Form
2SC4703 25 pcs (Non reel) • 12 mm wide embossed taping
2SC4703-T1 1 kpcs/reel • Collector face the perforat i on side of the tape

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

CBO

CEO

EBO

C

Note

tot

P

j

stg

25 V
12 V

2.5 V

150 mA

1.8 W

150

−

65 to +150

°

C

°

C

2

Mounted on double-sided copper-clad 16 cm

Note

× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1994, 2003



2SC4703

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure NF VCE = 5 V, IC = 50 mA, f = 1 GHz – 2.3 3.5 dB
Collector Capacitance
2nd Order Intermoduration Distorti on IM

3rd Order Intermoduration Distorti on IM

CBO

VCB = 20 V, IE = 0 mA – – 1.5

EBO

VEB = 2 V, IC = 0 mA – – 1.5

Note 1

FE

h




C

VCE = 5 V, IC = 50 mA 50 – 250 –

T

VCE = 5 V, IC = 50 mA – 6.0 – GHz

2



21e

S

VCE = 5 V, IC = 50 mA, f = 1 GHz 6.5 8.3 – dB

2



21e

S

VCE = 10 V, IC = 20 mA, f = 1 GHz – 8.5 – dB

Note 2

ob

VCB = 5 V, IE = 0 mA, f = 1 MHz – 1.5 2.5 pF
IC = 50 mA,

2

O

V

= 105 dBµV/75 Ω,

f = 190 − 90 MHz
IC = 50 mA,

3

O

V

= 105 dBµV/75 Ω,

f = 2 × 190 − 200 MHz

VCE = 5 V – 55 – dBc

CE

V

= 10 V 63 –

VCE = 5 V – 76 – dBc

CE

V

= 10 V – 81 –

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded

2.

s, Duty Cycle ≤ 2%

µ

hFE CLASSIFICATION

Rank SH SF SE

Marking SH SF SE

hFE Value 50 to 100 80 to 160 125 to 250

2

Data Sheet PU10339EJ01V1DS

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

2SC4703

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

2 500

2 000

(mW)

tot

1 800

1 500

1 000

Free Air
R

th (j-a)

500

400

312.5˚C/W

Total Power Dissipation P

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

1 000

100

(mA)

C

Ceramic Substrate

2

× 0.7 mm (t)

16 cm
R

th (j-a)

62.5˚C/W

VCE = 10 V

5 V

OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

5

(pF)

ob

2

1

0.5

Output Capacitance C

0.2

0.2 0.3 0.50.1 1 2 3 5 10 20 30
Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

120

100

(mA)

C

80

IB = 0.7 mA 0.6 mA

f = 1 MHz

0.5 mA

0.4 mA

10

1

Collector Current I

0.1

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

500

FE

100

50

DC Current Gain h

10

VCE = 10 V

1000.1 1 10 1 000

Collector Current IC (mA)

1.0 1.20.2 0.4 0.6 0.8

5 V

60

40

Collector Current I

20

0

2 4 6 8 10 12 14
Collector to Emitter Voltage VCE (V)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

10

f = 1 GHz

9

(dB)

2

|

21e

8

7

6

5

Insertion Power Gain |S

4

1 2 5 7 10 50 7010020 200

C

Collector Current I

(mA)

0.3 mA

0.2 mA

0.1 mA

VCE = 10 V

5 V

Data Sheet PU10339EJ01V1DS

3

2SC4703

NOISE FIGURE vs.
COLLECTOR CURRENT

5

4

VCE = 5 V
f = 1 GHz

(dBc)

2

IM2 vs. COLLECTOR CURRENT

70

VO = 105 dB V/75 Ω
f = 190 – 90 MHz

µ

3

2

Noise Figure NF (dB)

2 5 10 20 50 200100

1

Collector Current I

IM3 vs. COLLECTOR CURRENT

90

VO = 105 dB V/75 Ω

(dBc)

3

f = 2 × 190 – 200 MHz

80

70

60

µ

C

(mA)

VCE = 10 V

5 V

60

50

40

10 20 50 100 200

2nd Order Intermodulation Distortion IM

Collector Current I

C

(mA)

VCE = 10 V

5 V

50

10 20 50 100 200

3rd Order Intermodulation Distortion IM

Remark

Collector Current I

The graphs indicate nominal characteristics.

C

(mA)

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/

4

Data Sheet PU10339EJ01V1DS

PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)

2SC4703

4.5±0.1

0.8 MIN.

1.6±0.2

C

EB

0.47±0.06

1.5

3.0

2.5±0.1

0.42±0.060.42±0.06

PIN CONNECTIONS

E : Emitter
C: Collector (Fin)
B : Base

(IEC : SOT-89)

4.0±0.25

1.5±0.1

0.41

+0.03
–0.06

Data Sheet PU10339EJ01V1DS

5

2SC4703

•

The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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•

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•

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M8E 00. 4 - 0110

6

Data Sheet PU10339EJ01V1DS

2SC4703

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: [phone] FAX: [phone] E-mail: [email protected]

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

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