NEC 2SC4536 Schematic [ru]

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4536

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it
employs plastic surface mount type package (SOT-89).

FEATURES

• Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA

• Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz

tot

• Large P

• Small package : 3-pin power minimold package

tot

: P

= 2.0 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)

ORDERING INFORMATION

Part Number Quantity Supplying Form
2SC4536 25 pcs (Non reel) • 12 mm wide embossed taping
2SC4536-T1 1 kpcs/reel • Collector face the perforat i on side of the tape

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

CBO

CEO

EBO

C

Note

tot

P

j

stg

30 V
15 V

3.0 V

250 mA

2.0 W

150

−

65 to +150

°

C

°

C

2

Mounted on double-sided copper-clad 16 cm

Note

× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10338EJ01V0DS (1st edition)
(Previous No. P10369EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1994, 2003



ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

h



NF
NF

CBO

VCB = 20 V, IE = 0 mA – – 5.0

EBO

VEB = 2 V, IC = 0 mA – – 5.0

Note 1

FE

VCE = 10 V, IC = 50 mA 60 – 200 –

2



21e

S

VCE = 10 V, IC = 50 mA, f = 1 GHz 5.5 7.2 – dB

Note 2

VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 – dB

Note 2

VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 – dB
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,

2

O

V

= 105 dBµV/75 Ω, f1 = 190 MHz,

2

f

= 90 MHz, f = f1 − f

VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,

3

O

V

= 105 dBµV/75 Ω, f1 = 190 MHz,

2

f

= 200 MHz, f = 2 × f1 − f

Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration Distorti on IM

3rd Order Intermoduration Distorti on IM

2SC4536

µ

A

µ

A

– 59.0 – dBc

2

– 82.0 – dBc

2

Notes 1.

Pulse measurement: PW ≤ 350
RS = RL = 50 Ω, tuned

2.

hFE CLASSIFICATION

Rank QR QS

Marking QR QS

hFE Value 60 to 120 100 to 200

s, Duty Cycle ≤ 2%

µ

2

Data Sheet PU10338EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

2SC4536

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

2 500

2 000

(mW)

tot

Ceramic Substrate

2

× 0.7 mm (t)

16 cm
R

th (j-a)

62.5˚C/W

1 500

1 000

Free Air

th (j-a)

312.5˚C/W

R

500

400

Total Power Dissipation P

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

100

80

(mA)

C

IB = 0.6 mA

0.5 mA

0.4 mA

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5

(pF)

re

2

1

0.5

Reverse Transfer Capacitance C

0.2
1 5 10 30

Collector to Base Voltage VCB (V)

f = 1 MHz
I

E

= 0 mA

DC CURRENT GAIN vs.
COLLECTOR CURRENT

300

FE

100

VCE = 10 V

60

40

Collector Current I

20

0

Collector to Emitter Voltage VCE (V)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

10

5

(GHz)

T

2

1

0.5

Gain Bandwidth Product f

0.2

Collector Current IC (mA)

0.3 mA

0.2 mA

0.1 mA

10 20

V

CE

= 10 V

100 3001055030

50
30

DC Current Gain h

10

Collector Current IC (mA)

INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY

G

20

(dB)

(dB)

2

|

max (u)

21e

10

Insertion Power Gain |S

0

Maximum Power Gain G

Maximum Available Power Gain MAG (dB)

0.1 0.2 0.3 0.5 1 2 3

max (u)

2

|S

21e

|

Frequency f (GHz)

1000.1 1 10 1 000

CE

= 10 V

V

C

= 50 mA

I

MAG

Data Sheet PU10338EJ01V0DS

3