NEC 2sc4346 Datasets

Page 1
DATA SHEET
SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Small package, but can control for high-current
• Low collector saturation voltage
CE(sat) = 1.0 V MAX. (IC = 2.0 A)
V
• Ultra high-speed switching
f = 0.3
µ
t
s MAX. (IC = 2.0 A)
• Base reverse bias safe operating area is wide
CEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 500 V
Collector to Emitter Voltage VCEO 400 V
Emitter to Base Voltage V
Collector Current (DC) IC(DC) 5.0 A
Collector Current (pulse)
Base current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 mm
EBO 8.0 V
Note1
I
C(pulse)
T1 (TC = 25°C) 18 W
T2 (TA = 25°C)
B(DC) 2.5 A
1.0
2
x 0.7 mm
ORDERING INFORMATION
PART NUMBER PACKAGE
2SC4346
2SC4346-Z
10 A
Note2
, 2.0
Note3
W
TO-251 (MP-3)
TO-252 (MP-3Z)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17082EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark shows major revised points.
2004
Page 2
2SC4346,4346-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector to Emitter Voltage VCEO(SUS) IC = 2.0 A, IB1 = 0.4 A, L = 1 mH 400 V
VCEX(SUS)1 IC = 2.0 A, IB1 = −IB2 = 0.4 A,
µ
L = 180
H, Clamped
VCEX(SUS)2 IC = 4.0 A, IB1 = 1.0 A, −IB2 = 0.4 A,
µ
L = 180
H, Clamped
Collector Cut-off Current ICBO VCB = 400 V, IE = 0 10
ICER VCB = 400 V, RBE = 51 Ω, TA = 125°C 1.0 mA
ICEX1 VCB = 400 V, VBE(OFF) = −5 V 100
ICEX2 VCB = 400 V, VBE(OFF) = −5 V, TA = 125°C 1.0 mA
Emitter Cut-off Current
DC Current Gain
Note
IEBO VEB = 5.0 V, IC = 0 10
hFE1 VCE = 5.0 V, IC = 5 mA 15
hFE2 VCE = 5.0 V, IC = 0.5 A 20 80
hFE3 VCE = 5.0 V, IC = 2.0 A 10
Note
Note
V
CE(sat) IC = 2.0 A, IB = 0.4 A 0.5 1.0 V
V
BE(sat) IC = 2.0 A, IB = 0.4 A 1.0 1.5 V
Collector Saturation Voltage
Base Saturation Voltage
Turn-on Time ton IC = 2.0 A, RL = 75 Ω 0.7
Storage Time tstg IB1 = −IB2 = 0.4 A, VCC 150 V 2.5
Fall Time tf See Test Circuit 0.3
450 V
400 V
µ
A
µ
A
µ
A
µ
s
µ
s
µ
s
Note Pulsed
hFE CLASSIFICATION
Marking M L K
hFE2 20 to 40 30 to 60 40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
L
= 75 Ω
R
I
V
IN
PW
PW = 50 s
µ
Duty Cycle ≤ 2 %
B1
I
I
B2
−VBB = −5 V
C
T.U.T.
VCC = 150 V
Base current waveform
Collector current waveform
I
B1
I
B2
90 %
I
10 %
t
on
t
C
t
f
stg
2
Data Sheet D17082EJ2V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
µ
2SC4346,4346-Z
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
12
10
8
6
4
2
0
PT - Total Power Dissipation - W
0
With infinite heatsink (T
(Note)
50 100 150 200
T
A - Ambient Temperature - °C
C
= 25˚C)
(Note) 2SC4346-Z Mounted on ceramic subsutrate of 7.5 mm
Mounted on print board
2
x 0.7 mm
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
IB = 100 mA
2.0
1.6
1.2
90 mA 80 mA 70 mA 60 mA 50 mA 40 mA 30 mA 20 mA 10 mA
FORWARD BIAS SAFE OPERATING AREA
I
10
I
C(pulse)
1.0
Power Dissipation Limited
0.1
IC - Collector Current - A
TC = 25
0.01 1 10 100 1000
C(DC)
s/b Limited
˚C
V
CE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs. COLLECTOR CURRENT
100
PW = 1 µs
10 µs
100 µs
1 ms
10 ms
VCE = 5 V Pulsed
10
0.010.001
C - Collector Current - A
I
0.1 1
IC - Collector Current - A
0.8
0.4
0
01 234 5
V
CE - Collector to Emitter Voltage - V
hFE – DC Current Gain
COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLCTOR CURRENT
IC = 5 x I Pulsed
CE(sat) - Collector Saturation Voltage - V
10
1
0.010.001 0.1 1.0 10
V
BE(sat)
C - Collector Current - A
V
VBE(sat) - Base Saturation Voltage - V
I
B
V
CE(sat)
s
µ
s
stg - Storage Time -
tf - Fall Time -
t
TURN-ON, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT
10
t
s
µ
1
on - Turn-on Time -
stg
t
f
t
on
0.1
VCC = 200 V
C
: IB1 : IB2 = 10 : 1 : −2
I Pulsed
t
0.1 1 10
I
C - Collector Current - A
Data Sheet D17082EJ2V0DS
3
Page 4
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
6.5 ±0.2
5.0 ±0.2
4
+0.2
−0.1
1.5
2.3 ±0.2
0.5 ±0.1
2SC4346,4346-Z
2) TO-252 (MP-3Z)
0.1
6.5±0.2
5.0±0.2
+0.2
2.3±0.2
1.5-
4
0.5±0.1
1.6 ±0.2
1.1 ±0.2
213
0.5
2.32.3
5.5 ±0.27.0 MIN.
13.7 MIN.
+0.2
−0.1
1. Base
2. Collector
0.75
3. Emitter
4. Fin (Collector)
0.5
+0.2
−0.1
4.3 MAX.0.8
1.1±0.2
123
2.3 2.3
5.5±0.2
10.0 MAX.
2.0 MIN.
0.9
0.8
MAX.
MAX.
1. Base
2. Collector
3. Emitter
4. Fin (Collector)
0.8
1.0 MIN.
1.8 TYP.
0.7
4
Data Sheet D17082EJ2V0DS
Page 5
2SC4346,4346-Z
•
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M8E 02. 11-1
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