Page 1
DATA SHEET
SILICON POWER TRANSISTOR
2SC4342
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4342 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or blushless of OA and FA equipment.
FEATURES
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 150 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage V
Collector Current (DC) IC(DC) ±3.0 A
Collector Current (pulse)
Base Current (DC) IB(DC) 0.3 A
Total Power Dissipation (TA = 25°C) PT1 1.3 W
Total Power Dissipation (TC = 25°C) PT2 12 W
Junction Temperature T
Storage Temperature T
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EBO 8.0 V
Note
I
C(pulse)
j 150 °C
stg −55 to +150 °C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SC4342
±5.0 A
TO-126 (MP-5)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14862EJ3V0DS00 (3rd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
2002
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SC4342
Collector Cut-off Current ICBO VCB = 100 V, IE = 0 A 1.0
Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0 A 5.0 mA
DC Current Gain
hFE2 VCE = 2.0 V, IC = 3.0 A 1000
Collector Saturation Voltage
Base Saturation Voltage
Turn-on Time ton IC = 1.5 A, RL = 33 Ω 0.3
Storage Time tstg IB1 = −IB2 = 3.0 mA, VCC 50 V 1.5
Fall Time tf Refer fo the switching time (ton, tstg, tf)
Note
Note
Note
h
FE1 VCE = 2.0 V, IC = 1.5 A 2000 20000
VCE(sat) IC = 1.5 A, IB = 1.5 mA 1.5 V
V
BE(sat) IC = 1.5 A, IB = 1.5 mA 2.0 V
0.4 µs
test circuit
µ
A
µ
s
µ
s
Note Pulsed test PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
★
Marking M L K
hFE1 2000 to 5000 4000 to 10000 8000 to 20000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
RL
VIN
PW
.
µ
= 50 s
PW
.
Duty Cycle ≤ 2%
IB1
IB2
.
V
BB = −5.0 V
.
IC
T.U.T.
VCC
Base current
waveform
Collector current
waveform
IB2
IB1
90%
tstg
IC
tf
10%
ton
2
Data Sheet D14862EJ3V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
)
(W)
T
Total Power Dissipation P
2SC4342
Derating dT (%)
Case Temperature TC (°C)
(A)
C
Collector Current I
Collector to Emitter Voltage VCE (V)
Case Temperature TC (°C)
C/W)
°
(
th(j-c)
Transient Thermal Resistance r
Pulse Width PW (ms
Data Sheet D14862EJ3V0DS
3
Page 4
µ
(
µ
)
Pulse test
2SC4342
Collector Current IC (A)
DC Current Gain hFE
Pulse test
Collector Current IC (A)
Collector Current IC (A)
Base to Emitter Voltage VBE (V)Collector to Emitter Voltage VCE (V)
Pulse test
Collector Saturation Voltage VCE(sat) (V)
Collector Current IC (A)
4
Pulse test
s
s)
µ
s)
on
stg (
Fall Time tf (
StorageTime t
Turn-On Time t
Base Saturation Voltage VBE(sat) (V)
Collector Current IC (A)
Data Sheet D14862EJ3V0DS
Collector Current IC (A)
Page 5
★
PACKAGE DRAWING (Unit: mm)
TO-126 (MP-5)
8.5 MAX.
3.2 ±0.2
3.8 ±0.2
12.0 MAX.13.0 MIN.
123
2.8 MAX.
2SC4342
12 TYP.
+0.08
0.8
–0.05
2.5 ±0.2
0.55
+0.08
–0.05
1.2 TYP.
2.3 TYP.2.3 TYP.
1: Emitter
2: Collector
3: Base
EQUIVALENT CIRCUIT
2
3
1. Emitter
2. Collector
3. Base
1
.
R1 = 8.0 kΩ
.
.
R2 = 850 Ω
.
R2R1
Data Sheet D14862EJ3V0DS
5
Page 6
2SC4342
•
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M8E 02. 11-1
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